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1. WO2020066669 - METHOD FOR PROCESSING SEMICONDUCTOR SUBSTRATE

Publication Number WO/2020/066669
Publication Date 02.04.2020
International Application No. PCT/JP2019/035958
International Filing Date 12.09.2019
IPC
H01L 21/3065 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
306Chemical or electrical treatment, e.g. electrolytic etching
3065Plasma etching; Reactive-ion etching
G03F 7/40 2006.01
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
26Processing photosensitive materials; Apparatus therefor
40Treatment after imagewise removal, e.g. baking
G03F 7/42 2006.01
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
26Processing photosensitive materials; Apparatus therefor
42Stripping or agents therefor
H01L 21/027 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
027Making masks on semiconductor bodies for further photolithographic processing, not provided for in group H01L21/18 or H01L21/34165
H01L 21/306 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
306Chemical or electrical treatment, e.g. electrolytic etching
H01L 21/312 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
31to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After-treatment of these layers; Selection of materials for these layers
312Organic layers, e.g. photoresist
CPC
G03F 7/40
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
26Processing photosensitive materials; Apparatus therefor
40Treatment after imagewise removal, e.g. baking
G03F 7/42
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
26Processing photosensitive materials; Apparatus therefor
42Stripping or agents therefor
H01L 21/027
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
027Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
H01L 21/306
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
302to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
306Chemical or electrical treatment, e.g. electrolytic etching
H01L 21/3065
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
302to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
306Chemical or electrical treatment, e.g. electrolytic etching
3065Plasma etching; Reactive-ion etching
Applicants
  • JSR株式会社 JSR CORPORATION [JP]/[JP]
Inventors
  • ▲葛▼西 達也 KASAI Tatsuya
  • 佐藤 希美 SATOU Nozomi
Agents
  • 天野 一規 AMANO Kazunori
Priority Data
2018-18249327.09.2018JP
2019-00977623.01.2019JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) METHOD FOR PROCESSING SEMICONDUCTOR SUBSTRATE
(FR) PROCÉDÉ DE TRAITEMENT DE SUBSTRAT SEMI-CONDUCTEUR
(JA) 半導体基板の処理方法
Abstract
(EN)
The purpose of the present invention is to provide a method for processing a semiconductor substrate that can promote miniaturization of a pattern, and that can reduce damage to a substrate in a rework process. The present invention is a method for processing a semiconductor substrate, comprising: a step for coating directly or indirectly on a substrate a composition for forming a silicon-containing film that contains polycarbosilane and a solvent; a step for performing on the silicon-containing film formed by the step for coating the composition for forming a silicon-containing film at least one type of process selected from a group comprising radiation exposure, reactive gas exposure, plasma exposure, ion exposure, contact with a reactive liquid, and heating of 400 °C or greater; and a step for removing the silicon-containing film after the processing step using a removing liquid containing an acid or a removing liquid containing a base. It is preferable that the polycarbosilane have a structural unit represented by formula (1). In formula (1), R1 is a substituted or unsubstituted divalent C1-20 hydrocarbon group. X and Y are hydrogen atoms, hydroxy groups, halogen atoms, or monovalent C1-20 organic groups.
(FR)
Le but de la présente invention est de fournir un procédé de traitement d'un substrat semi-conducteur qui peut favoriser la miniaturisation d'un motif, et qui peut réduire un endommagement d'un substrat dans un processus de réusinage. La présente invention concerne un procédé de traitement d'un substrat semi-conducteur, comprenant : une étape pour étaler directement ou indirectement sur un substrat une composition pour former un film contenant du silicium qui contient polycarbosilane et un solvant ; une étape pour réaliser, sur le film contenant du silicium formé par l'étape destinée à étaler la composition pour former un film contenant du silicium, au moins un type de processus choisi parmi un groupe comprenant une exposition au rayonnement, une exposition à des gaz réactifs, une exposition au plasma, une exposition aux ions, un contact avec un liquide réactif, et chauffer à 400 °C ou plus ; et une étape pour éliminer le film contenant du silicium après l'étape de traitement à l'aide d'un liquide d'élimination contenant un acide ou un liquide d'élimination contenant une base. Il est préférable que le polycarbosilane présente une unité structurale représentée par la formule (1). Dans la formule (1), R1 est un groupe hydrocarbone divalent en C1-20 substitué ou non substitué. X et Y sont des atomes d'hydrogène, des groupes hydroxy, des atomes d'halogène, ou des groupes organiques monovalents en C1-20.
(JA)
パターンの微細化を促進することができ、リワークプロセスにおいて基板へのダメージを低減することができる半導体基板の処理方法の提供を目的とする。本発明は、基板に直接又は間接にポリカルボシラン及び溶媒を含有するケイ素含有膜形成用組成物を塗工する工程と、上記ケイ素含有膜形成用組成物塗工工程により形成されたケイ素含有膜に対する放射線の暴露、反応性気体の暴露、プラズマの暴露、イオンの暴露、反応性液体の接触及び400℃以上の加熱からなる群より選ばれる少なくとも1種の処理を行う工程と、上記処理工程後のケイ素含有膜を酸を含有する除去液又は塩基を含有する除去液で除去する工程とを備える半導体基板の処理方法である。上記ポリカルボシランが下記式(1)で表される構造単位を有することが好ましい。下記式(1)中、Rは、置換又は非置換の炭素数1~20の2価の炭化水素基である。X及びYは、水素原子、ヒドロキシ基、ハロゲン原子又は炭素数1~20の1価の有機基である。
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