Processing

Please wait...

Settings

Settings

Goto Application

1. WO2020066544 - EPITAXIAL WAFER PRODUCTION METHOD, SILICON-BASED SUBSTRATE FOR USE IN EPITAXIAL GROWTH, AND EPITAXIAL WAFER

Publication Number WO/2020/066544
Publication Date 02.04.2020
International Application No. PCT/JP2019/035118
International Filing Date 06.09.2019
IPC
H01L 21/20 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
20Deposition of semiconductor materials on a substrate, e.g. epitaxial growth
C30B 25/18 2006.01
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
25Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth
02Epitaxial-layer growth
18characterised by the substrate
C30B 29/38 2006.01
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
29Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
10Inorganic compounds or compositions
38Nitrides
H01L 21/205 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
20Deposition of semiconductor materials on a substrate, e.g. epitaxial growth
205using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
CPC
C30B 25/18
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL-GROWTH
25Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
02Epitaxial-layer growth
18characterised by the substrate
C30B 29/38
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL-GROWTH
29Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
10Inorganic compounds or compositions
38Nitrides
H01L 21/20
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
20Deposition of semiconductor materials on a substrate, e.g. epitaxial growth ; solid phase epitaxy
H01L 21/205
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
20Deposition of semiconductor materials on a substrate, e.g. epitaxial growth ; solid phase epitaxy
205using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
Applicants
  • 信越半導体株式会社 SHIN-ETSU HANDOTAI CO., LTD. [JP]/[JP]
Inventors
  • 土屋 慶太郎 TSUCHIYA Keitarou
  • 萩本 和徳 HAGIMOTO Kazunori
  • 篠宮 勝 SHINOMIYA Masaru
Agents
  • 好宮 幹夫 YOSHIMIYA Mikio
  • 小林 俊弘 KOBAYASHI Toshihiro
Priority Data
2018-18017726.09.2018JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) EPITAXIAL WAFER PRODUCTION METHOD, SILICON-BASED SUBSTRATE FOR USE IN EPITAXIAL GROWTH, AND EPITAXIAL WAFER
(FR) PROCÉDÉ DE PRODUCTION DE TRANCHE ÉPITAXIALE, SUBSTRAT À BASE DE SILICIUM DESTINÉ À ÊTRE UTILISÉ EN CROISSANCE ÉPITAXIALE, ET TRANCHE ÉPITAXIALE
(JA) エピタキシャルウェーハの製造方法、エピタキシャル成長用シリコン系基板及びエピタキシャルウェーハ
Abstract
(EN)
The present invention pertains to an epitaxial wafer production method that comprises: a step for preparing a silicon-based substrate that has a chamfered portion at the outer circumferential part thereof; a step for forming an annular trench in the chamfered portion of the silicon-based substrate so as to run along the inner circumferential rim of the chamfered portion; and a step for performing epitaxial growth on the silicon-based substrate that has the trench formed therein. With this configuration, it is possible to provide an epitaxial wafer production method capable of preventing extension of cracks formed in the outer circumferential chamfered portion toward the center.
(FR)
La présente invention concerne un procédé de production de tranche épitaxiale qui comprend : une étape de préparation d'un substrat à base de silicium qui présente une partie chanfreinée au niveau de sa partie circonférentielle extérieure ; une étape de formation d'une tranchée annulaire dans la partie chanfreinée du substrat à base de silicium de manière qu'elle s'étende le long du bord circonférentiel intérieur de la partie chanfreinée ; et une étape de réalisation d'une croissance épitaxiale sur le substrat à base de silicium dans lequel est formée la tranchée. Avec cette configuration, il est possible d'obtenir un procédé de production de tranche épitaxiale susceptible de prévenir l'extension de fissures, formées dans la partie chanfreinée circonférentielle extérieure, vers le centre.
(JA)
本発明は、エピタキシャルウェーハの製造方法であって、外周部に面取り部を有するシリコン系基板を準備する工程と、前記シリコン系基板の前記面取り部に、前記面取り部の内周縁に沿った円環状のトレンチを形成する工程と、前記トレンチを形成した前記シリコン系基板上に、エピタキシャル成長を行う工程とを有するエピタキシャルウェーハの製造方法である。これにより、外周面取り部に発生したクラックが中心部方向に伸長することを抑制できるエピタキシャルウェーハの製造方法が提供される。
Also published as
Latest bibliographic data on file with the International Bureau