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1. WO2020066488 - CONNECTION ELECTRODE AND METHOD FOR MANUFACTURING CONNECTION ELECTRODE

Publication Number WO/2020/066488
Publication Date 02.04.2020
International Application No. PCT/JP2019/034537
International Filing Date 03.09.2019
IPC
H01L 21/60 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
50Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/06-H01L21/326162
60Attaching leads or other conductive members, to be used for carrying current to or from the device in operation
CPC
H01L 21/7685
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
71Manufacture of specific parts of devices defined in group H01L21/70
768Applying interconnections to be used for carrying current between separate components within a device ; comprising conductors and dielectrics
76838characterised by the formation and the after-treatment of the conductors
76841Barrier, adhesion or liner layers
7685the layer covering a conductive structure
H01L 21/76858
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
71Manufacture of specific parts of devices defined in group H01L21/70
768Applying interconnections to be used for carrying current between separate components within a device ; comprising conductors and dielectrics
76838characterised by the formation and the after-treatment of the conductors
76841Barrier, adhesion or liner layers
76853characterized by particular after-treatment steps
76855After-treatment introducing at least one additional element into the layer
76858by diffusing alloying elements
H01L 2221/1078
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2221Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
10Applying interconnections to be used for carrying current between separate components within a device
1068Formation and after-treatment of conductors
1073Barrier, adhesion or liner layers
1078Multiple stacked thin films not being formed in openings in dielectrics
H01L 23/53223
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
52Arrangements for conducting electric current within the device in operation from one component to another ; , i.e. interconnections, e.g. wires, lead frames
522including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
532characterised by the materials
53204Conductive materials
53209based on metals, e.g. alloys, metal silicides
53214the principal metal being aluminium
53223Additional layers associated with aluminium layers, e.g. adhesion, barrier, cladding layers
H01L 23/53238
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
52Arrangements for conducting electric current within the device in operation from one component to another ; , i.e. interconnections, e.g. wires, lead frames
522including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
532characterised by the materials
53204Conductive materials
53209based on metals, e.g. alloys, metal silicides
53228the principal metal being copper
53238Additional layers associated with copper layers, e.g. adhesion, barrier, cladding layers
H01L 24/00
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
24Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
Applicants
  • 株式会社村田製作所 MURATA MANUFACTURING CO., LTD. [JP]/[JP]
Inventors
  • 坂井 亮介 SAKAI Ryosuke
Agents
  • 特許業務法人 楓国際特許事務所 KAEDE PATENT ATTORNEYS' OFFICE
Priority Data
2018-18325528.09.2018JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) CONNECTION ELECTRODE AND METHOD FOR MANUFACTURING CONNECTION ELECTRODE
(FR) ÉLECTRODE DE CONNEXION ET PROCÉDÉ DE FABRICATION D'ÉLECTRODE DE CONNEXION
(JA) 接続電極および接続電極の製造方法
Abstract
(EN)
This connection electrode comprises: a metal film (40); a metal film (50); a mixed layer (45); and a UBM (80). The metal film (50) is formed on the metal film (40), and the UBM (80) is formed on the metal film (50). The mixed layer (45) is a layer in which metal particles (P40) forming the metal film (40) and metal particles (P50) forming the metal film (50) are mixed. When viewed in a first direction in which the metal film (40) and the metal film (50) are arranged, at least a portion of the mixed layer (45) is formed in a first region (Re1) that overlaps a bonding surface between the UBM (80) and the metal film (50).
(FR)
Cette électrode de connexion comprend : un film métallique (40) ; un film métallique (50) ; une couche mixte (45) ; et un UBM (80). Le film métallique (50) est formé sur le film métallique (40) et l'UBM (80) est formé sur le film métallique (50). La couche mixte (45) est une couche dans laquelle sont mélangées des particules métalliques (P40) formant le film métallique (40) et des particules métalliques (P50) formant le film métallique (50). Vu dans une première direction dans laquelle sont agencés le film métallique (40) et le film métallique (50), au moins une partie de la couche mixte (45) est formée dans une première région (Re1) qui chevauche une surface de liaison entre l'UBM (80) et le film métallique (50).
(JA)
接続電極は、金属膜(40)、金属膜(50)、混在層(45)、および、UBM(80)を備える。金属膜(50)は、金属膜(40)上に形成され、UBM(80)は、金属膜(50)上に形成されている。混在層(45)は、金属膜(40)を形成する金属粒子(P40)と、金属膜(50)を形成する金属粒子(P50)と、が混在する層である。金属膜(40)、および、金属膜(50)が並ぶ第1方向に視て、混在層(45)の少なくとも一部は、UBM(80)と金属膜(50)との接合面に重なる第1領域(Re1)に形成されている。
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