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1. WO2020066420 - LIGHT-SHIELDING COMPOSITION, CURED FILM, LIGHT-SHIELDING FILM, AND SOLID-STATE IMAGING ELEMENT

Publication Number WO/2020/066420
Publication Date 02.04.2020
International Application No. PCT/JP2019/033357
International Filing Date 26.08.2019
IPC
G02B 5/20 2006.01
GPHYSICS
02OPTICS
BOPTICAL ELEMENTS, SYSTEMS, OR APPARATUS
5Optical elements other than lenses
20Filters
G02B 5/00 2006.01
GPHYSICS
02OPTICS
BOPTICAL ELEMENTS, SYSTEMS, OR APPARATUS
5Optical elements other than lenses
G02B 5/22 2006.01
GPHYSICS
02OPTICS
BOPTICAL ELEMENTS, SYSTEMS, OR APPARATUS
5Optical elements other than lenses
20Filters
22Absorbing filters
G03F 7/004 2006.01
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
004Photosensitive materials
G03F 7/075 2006.01
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
004Photosensitive materials
075Silicon-containing compounds
H01L 27/146 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144Devices controlled by radiation
146Imager structures
CPC
G02B 5/00
GPHYSICS
02OPTICS
BOPTICAL ELEMENTS, SYSTEMS, OR APPARATUS
5Optical elements other than lenses
G02B 5/20
GPHYSICS
02OPTICS
BOPTICAL ELEMENTS, SYSTEMS, OR APPARATUS
5Optical elements other than lenses
20Filters
G02B 5/22
GPHYSICS
02OPTICS
BOPTICAL ELEMENTS, SYSTEMS, OR APPARATUS
5Optical elements other than lenses
20Filters
22Absorbing filters
G03F 7/004
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
004Photosensitive materials
G03F 7/075
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
004Photosensitive materials
075Silicon-containing compounds
H01L 27/146
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144Devices controlled by radiation
146Imager structures
Applicants
  • 富士フイルム株式会社 FUJIFILM CORPORATION [JP]/[JP]
Inventors
  • 浜田 大輔 HAMADA Daisuke
  • 大谷 貴洋 OYA Takahiro
  • 加藤 亮祐 KATO Ryosuke
Agents
  • 中島 順子 NAKASHIMA Junko
  • 米倉 潤造 YONEKURA Junzo
  • 藤森 義真 FUJIMORI Yoshinao
Priority Data
2018-17864625.09.2018JP
2018-23814320.12.2018JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) LIGHT-SHIELDING COMPOSITION, CURED FILM, LIGHT-SHIELDING FILM, AND SOLID-STATE IMAGING ELEMENT
(FR) COMPOSITION DE PROTECTION CONTRE LA LUMIÈRE, FILM DURCI, FILM DE PROTECTION CONTRE LA LUMIÈRE ET ÉLÉMENT D'IMAGERIE À SEMI-CONDUCTEUR
(JA) 遮光性組成物、硬化膜、遮光膜、固体撮像素子
Abstract
(EN)
Provided is a light-shielding composition which enables the formation of a cured film having excellent light-shielding properties, low reflectance, and light resistance. Also provided are a cured film, a light-shielding film, and a solid-state imaging element. This light-shielding composition contains a blacking material, a polymerizable compound, a photopolymerization initiator, and a resin. The resin contains a polymerizable group and a group represented by general formula (1). The number average molecular weight of the resin is 100 to 15000. The resin content is 2.0 to 15.0% by mass of the total solids content by mass of the light-shielding composition. (1): *-(SiR1R2-O)na-*
(FR)
L'invention concerne une composition de protection contre la lumière qui permet la formation d'un film durci ayant d'excellentes propriétés de protection contre la lumière, une faible réflectance et une résistance à la lumière. L'invention concerne également un film durci, un film de protection contre la lumière et un élément d'imagerie à semi-conducteur. Cette composition de protection contre la lumière contient un matériau de noircissement, un composé polymérisable, un initiateur de photopolymérisation et une résine. La résine contient un groupe polymérisable et un groupe représenté par la formule générale (1). Le poids moléculaire moyen en nombre de la résine est de 100 à 15000. La teneur en résine est de 2,0 à 15,0 % en masse de la teneur totale en solides en masse de la composition de protection contre la lumière. (1) : *-(SiR1R2-O)na-*
(JA)
遮光性、低反射性、及び、耐光性に優れる硬化膜を形成できる遮光性組成物を提供する。硬化膜、遮光膜、及び、固体撮像素子を提供する。遮光性組成物は、黒色着色材、重合性化合物、光重合開始剤、及び、樹脂を含有する遮光性組成物であって、樹脂が、重合性基と、一般式(1)で表される基を含有し、上記樹脂の数平均分子量が100~15000であり、樹脂の含有量が、遮光性組成物の固形分の全質量に対して、2.0~15.0質量%である。 *-(SiR-O)na-* (1)
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