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1. WO2020066342 - ACTINIC-LIGHT-SENSITIVE OR RADIATION-SENSITIVE RESIST COMPOSITION, RESIST FILM, PATTERN FORMATION METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE

Publication Number WO/2020/066342
Publication Date 02.04.2020
International Application No. PCT/JP2019/031624
International Filing Date 09.08.2019
IPC
G03F 7/039 2006.01
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
004Photosensitive materials
039Macromolecular compounds which are photodegradable, e.g. positive electron resists
C08F 212/14 2006.01
CCHEMISTRY; METALLURGY
08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
212Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
02Monomers containing only one unsaturated aliphatic radical
04containing one ring
14substituted by hetero atoms or groups containing hetero atoms
G03F 7/20 2006.01
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
20Exposure; Apparatus therefor
CPC
C08F 212/14
CCHEMISTRY; METALLURGY
08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
212Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
02Monomers containing only one unsaturated aliphatic radical
04containing one ring
14substituted by heteroatoms or groups containing heteroatoms
G03F 7/039
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
004Photosensitive materials
039Macromolecular compounds which are photodegradable, e.g. positive electron resists
G03F 7/20
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
20Exposure; Apparatus therefor
Applicants
  • 富士フイルム株式会社 FUJIFILM CORPORATION [JP]/[JP]
Inventors
  • 金子 明弘 KANEKO Akihiro
  • 八木 一成 YAGI Kazunari
  • 川島 敬史 KAWASHIMA Takashi
  • 後藤 研由 GOTO Akiyoshi
Agents
  • 伊東 秀明 ITOH Hideaki
  • 三橋 史生 MITSUHASHI Fumio
Priority Data
2018-18390028.09.2018JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) ACTINIC-LIGHT-SENSITIVE OR RADIATION-SENSITIVE RESIST COMPOSITION, RESIST FILM, PATTERN FORMATION METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE
(FR) COMPOSITION DE RÉSINE SENSIBLE À LA LUMIÈRE ACTINIQUE OU AU RAYONNEMENT, FILM DE RÉSERVE, PROCÉDÉ DE FORMATION DE MOTIF ET PROCÉDÉ DE FABRICATION D'UN DISPOSITIF ÉLECTRONIQUE
(JA) 感活性光線性又は感放射線性樹脂組成物、レジスト膜、パターン形成方法、電子デバイスの製造方法
Abstract
(EN)
The present invention provides an actinic-light-sensitive or radiation-sensitive resin composition having superior LER performance and collapse-prevention performance. Also provided are a resist film, a pattern formation method, and a method for manufacturing an electronic device. The actinic-light-sensitive or radiation-sensitive resin composition of the present invention contains: an acid-degradable resin that has a repeating unit represented by general formula (1); and a compound that generates an acid when irradiated with actinic light or radiation.
(FR)
La présente invention concerne une composition de résine sensible à la lumière actinique ou au rayonnement qui possède une performance de LER et une performance de prévention d'affaissement qui sont supérieures. L'invention concerne également un film de réserve, un procédé de formation de motifs et un procédé de fabrication d’un dispositif électronique. La composition de résine sensible à la lumière actinique ou au rayonnement de la présente invention contient : une résine dégradable par un acide qui possède un motif récurrent représenté par la formule générale (1) ; et un composé qui génère un acide lorsqu'il est irradié par une lumière actinique ou par un rayonnement.
(JA)
本発明は、LER性能及び倒れ抑制能に優れる感活性光線性又は感放射線性樹脂組成物を提供する。また、レジスト膜、パターン形成方法、及び、電子デバイスの製造方法を提供する。本発明の感活性光線性又は感放射線性樹脂組成物は、一般式(1)で表される繰り返し単位を有する酸分解性樹脂と、活性光線又は放射線の照射により酸を発生する化合物と、を含む。
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