Processing

Please wait...

Settings

Settings

Goto Application

1. WO2020066177 - SEMICONDUCTOR DEVICE INSPECTION METHOD AND SEMICONDUCTOR DEVICE INSPECTION DEVICE

Publication Number WO/2020/066177
Publication Date 02.04.2020
International Application No. PCT/JP2019/025249
International Filing Date 25.06.2019
IPC
G01R 31/302 2006.01
GPHYSICS
01MEASURING; TESTING
RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
31Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
28Testing of electronic circuits, e.g. by signal tracer
302Contactless testing
G01R 31/26 2014.01
GPHYSICS
01MEASURING; TESTING
RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
31Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
26Testing of individual semiconductor devices
H01L 21/66 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
66Testing or measuring during manufacture or treatment
CPC
G01R 31/26
GPHYSICS
01MEASURING; TESTING
RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
31Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
26Testing of individual semiconductor devices
G01R 31/302
GPHYSICS
01MEASURING; TESTING
RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
31Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
28Testing of electronic circuits, e.g. by signal tracer
302Contactless testing
Applicants
  • 浜松ホトニクス株式会社 HAMAMATSU PHOTONICS K.K. [JP]/[JP]
Inventors
  • 鈴木 信介 SUZUKI Shinsuke
Agents
  • 長谷川 芳樹 HASEGAWA Yoshiki
  • 黒木 義樹 KUROKI Yoshiki
  • 柴山 健一 SHIBAYAMA Kenichi
Priority Data
2018-18064726.09.2018JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) SEMICONDUCTOR DEVICE INSPECTION METHOD AND SEMICONDUCTOR DEVICE INSPECTION DEVICE
(FR) PROCÉDÉ ET DISPOSITIF D'INSPECTION DE DISPOSITIF À SEMI-CONDUCTEUR
(JA) 半導体デバイス検査方法及び半導体デバイス検査装置
Abstract
(EN)
This semiconductor device inspection method comprises: a first irradiation step in which inspection irradiation is performed on at least one point in an area to be inspected; a first output step in which first information indicating whether or not a defect point exists in the entire area to be inspected is output on the basis of the first irradiation step; a second irradiation step in which, when it is determined that the inspection irradiation is further performed on the basis of the first information, the inspection irradiation is performed on at least one point in an area to be inspected, which is different from the point on which the inspection irradiation has been performed in the first irradiation step; and a second output step in which second information indicating whether or not a defect point exists in the entire area to be inspected is output on the basis of an output signal output from a semiconductor device during the second irradiation step.
(FR)
La présente invention concerne un procédé d’inspection de dispositif à semi-conducteur comprend : une première étape d’irradiation dans laquelle une irradiation d’inspection est effectuée sur au moins un point dans une zone à inspecter ; une première étape de sortie dans laquelle des premières informations indiquant si un point de défaut existe ou non dans la zone entière à inspecter sont sorties sur la base de la première étape d’irradiation ; une seconde étape d’irradiation dans laquelle, quand il est déterminé que l’irradiation d’inspection est en outre effectuée sur la base des premières informations, l’irradiation d’inspection est effectuée sur au moins un point dans une zone à inspecter, qui est différent du point sur lequel l’irradiation d’inspection a été effectuée dans la première étape d’irradiation ; et une seconde étape de sortie dans laquelle des secondes informations indiquant si un point de défaut existe ou non dans la zone entière à inspecter sont sorties sur la base d’un signal de sortie sorti à partir d’un dispositif à semi-conducteur lors de la seconde étape d’irradiation.
(JA)
半導体デバイス検査方法は、被検査領域内の少なくとも1つの箇所に検査照射を行う第1照射ステップと、第1照射ステップに基づいて被検査領域の全体における欠陥箇所の有無を示す第1の情報を出力する第1出力ステップと、第1の情報に基づいて検査照射をさらに行うと判断された場合に、第1照射ステップで検査照射が行われた箇所と異なる、被検査領域内の少なくとも1つの箇所に検査照射を行う第2照射ステップと、第2照射ステップの間に半導体デバイスから出力された出力信号に基づいて被検査領域の全体における欠陥箇所の有無を示す第2の情報を出力する第2出力ステップとを含む。
Also published as
Latest bibliographic data on file with the International Bureau