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1. WO2020066128 - PATTERN SHAPE EVALUATION DEVICE, PATTERN SHAPE EVALUATION SYSTEM, AND PATTERN SHAPE EVALUATION METHOD

Publication Number WO/2020/066128
Publication Date 02.04.2020
International Application No. PCT/JP2019/021368
International Filing Date 29.05.2019
IPC
G01B 15/04 2006.01
GPHYSICS
01MEASURING; TESTING
BMEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
15Measuring arrangements characterised by the use of wave or particle radiation
04for measuring contours or curvatures
G01N 23/2251 2018.01
GPHYSICS
01MEASURING; TESTING
NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
23Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/-G01N17/178
22by measuring secondary emission from the material
225using electron or ion microprobes
2251using incident electron beams, e.g. scanning electron microscopy
H01L 21/66 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
66Testing or measuring during manufacture or treatment
CPC
G01B 15/04
GPHYSICS
01MEASURING; TESTING
BMEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
15Measuring arrangements characterised by the use of wave or particle radiation
04for measuring contours or curvatures
G01N 23/2251
GPHYSICS
01MEASURING; TESTING
NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
23Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00G01N17/00, G01N21/00 or G01N22/00
22by measuring secondary emission from the material
225using electron or ion
2251using incident electron beams, e.g. scanning electron microscopy [SEM]
Applicants
  • 株式会社日立ハイテク HITACHI HIGH-TECH CORPORATION [JP]/[JP]
Inventors
  • 新谷 敦子 SHINTANI, Atsuko
  • 川崎 貴裕 KAWASAKI Takahiro
  • 蓮見 和久 HASUMI Kazuhisa
  • 井古田 まさみ IKOTA Masami
  • 川田 洋揮 KAWADA Hiroki
Agents
  • ポレール特許業務法人 POLAIRE I.P.C.
Priority Data
2018-17843025.09.2018JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) PATTERN SHAPE EVALUATION DEVICE, PATTERN SHAPE EVALUATION SYSTEM, AND PATTERN SHAPE EVALUATION METHOD
(FR) DISPOSITIF D'ÉVALUATION DE FORME DE MOTIF, SYSTÈME D'ÉVALUATION DE FORME DE MOTIF ET PROCÉDÉ D'ÉVALUATION DE FORME DE MOTIF
(JA) パターン形状評価装置、パターン形状評価システム及びパターン形状評価方法
Abstract
(EN)
The present invention suppresses an influence of noise caused by a device or an environment, and evaluates line edge roughness or a line width roughness. To this end, an averaged signal profile 405 is obtained from a moving average of S pixels (S is an integer larger than 1) in a Y-direction on a signal profile that represents an X-directional secondary electronic signal volume distribution for prescribed Y coordinates obtained from a top-down image, an edge position 406 of a line pattern is extracted on the basis of the averaged signal profile, and the height of the noise floor is calculated on the basis of first power spectrum density 407 of LER data or LWR data based on the extracted edge position and a second power spectrum density 409 of a rectangular window function corresponding to the moving average of the S pixels.
(FR)
La présente invention supprime une influence du bruit provoqué par un dispositif ou un environnement, et évalue l'inégalité de la bordure d'une ligne ou l'inégalité de la largeur d'une ligne. À cette fin, un profil de signal moyenné (405) est obtenu à partir d'une moyenne mobile de S pixels (S est un entier supérieur à 1) selon une direction Y sur un profil de signal qui représente une distribution en volume de signal électronique secondaire selon la direction X pour des coordonnées Y prédéfinies obtenues à partir d'une image descendante, une position de bordure (406) d'un motif de ligne est extraite sur la base du profil de signal moyenné, et la hauteur du bruit de fond est calculée sur la base d'une première densité de spectre de puissance (407) de données LER ou de données LWR sur la base de la position de bordure extraite et d'une seconde densité de spectre de puissance (409) d'une fonction de fenêtre rectangulaire correspondant à la moyenne mobile des S pixels.
(JA)
ラインエッジラフネスあるいはライン幅ラフネスを、装置や環境に起因するノイズの影響を抑えて評価する。このため、トップダウン画像から得られる所定のY座標に対するX方向の二次電子信号量分布を示す信号プロファイルをY方向にS画素(Sは1より大きい整数)の移動平均をとった平均化信号プロファイル405を求め、平均化信号プロファイルに基づきラインパターンのエッジ位置406を抽出し、抽出したエッジ位置に基づくLERデータまたはLWRデータの第1のパワースペクトル密度407と、S画素の移動平均化に対応する矩形窓関数の第2のパワースペクトル密度409とに基づき、ノイズフロア高さを計算する。
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