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1. WO2020065993 - SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SAME

Publication Number WO/2020/065993
Publication Date 02.04.2020
International Application No. PCT/JP2018/036512
International Filing Date 28.09.2018
IPC
H01L 21/338 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
334Multistep processes for the manufacture of devices of the unipolar type
335Field-effect transistors
338with a Schottky gate
H01L 21/28 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
28Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/268158
H01L 29/812 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66Types of semiconductor device
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76Unipolar devices
772Field-effect transistors
80with field effect produced by a PN or other rectifying junction gate
812with a Schottky gate
CPC
H01L 21/28
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
28Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
H01L 29/812
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
66Types of semiconductor device ; ; Multistep manufacturing processes therefor
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
76Unipolar devices ; , e.g. field effect transistors
772Field effect transistors
80with field effect produced by a PN or other rectifying junction gate ; , i.e. potential-jump barrier
812with a Schottky gate
Applicants
  • サンケン電気株式会社 SANKEN ELECTRIC CO., LTD. [JP]/[JP]
Inventors
  • 位田 真哉 INDEN Shinya
Agents
  • 三好 秀和 MIYOSHI Hidekazu
  • 高橋 俊一 TAKAHASHI Shunichi
  • 伊藤 正和 ITO Masakazu
  • 高松 俊雄 TAKAMATSU Toshio
Priority Data
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SAME
(FR) DISPOSITIF À SEMI-CONDUCTEUR ET SON PROCÉDÉ DE FABRICATION
(JA) 半導体装置及びその製造方法
Abstract
(EN)
A semiconductor device comprising: a semiconductor substrate (10); a first interlayer dielectric film (21) disposed on a major surface of the semiconductor substrate (10); a second interlayer dielectric film (22) disposed on the first interlayer dielectric film (21); and an electrical conductor film (30) which is embedded in an opening continuously penetrating through the first interlayer dielectric film (21) and the second interlayer dielectric film (22) and which is in contact with the major surface of the semiconductor substrate (10). A first inclination angle S1 formed by a side surface of the first interlayer dielectric film (21) and the major surface of the semiconductor substrate (10) is smaller than a second inclination angle S2 formed by an extension line of the side surface of the second interlayer dielectric film (22) and the major surface of the semiconductor substrate (10), and an upper surface of the second interlayer dielectric film (22) is inclined so as to approach the semiconductor substrate (10) gradually outward from the upper end of the opening.
(FR)
L'invention concerne un dispositif à semi-conducteur comprenant : un substrat semi-conducteur (10) ; un premier film diélectrique intercouche (21) disposé sur une surface principale du substrat semi-conducteur (10) ; un second film diélectrique intercouche (22) disposé sur le premier film diélectrique intercouche (21) ; et un film conducteur électrique (30) qui est intégré dans une ouverture pénétrant de façon continue à travers le premier film diélectrique intercouche (21) et le second film diélectrique intercouche (22) et qui est en contact avec la surface principale du substrat semi-conducteur (10). Un premier angle d'inclinaison S1 formé par une surface latérale du premier film diélectrique intercouche (21) et la surface principale du substrat semi-conducteur (10) est inférieur à un second angle d'inclinaison S2 formé par une ligne d'extension de la surface latérale du second film diélectrique intercouche (22) et la surface principale du substrat semi-conducteur (10), et une surface supérieure du second film diélectrique intercouche (22) est inclinée de manière à s'approcher du substrat semi-conducteur (10) progressivement vers l'extérieur à partir de l'extrémité supérieure de l'ouverture.
(JA)
半導体基体(10)と、半導体基体(10)の主面に配置された第1の層間絶縁膜(21)と、第1の層間絶縁膜(21)の上に配置された第2の層間絶縁膜(22)と、第1の層間絶縁膜(21)と第2の層間絶縁膜(22)を連続して貫通する開口部に埋め込まれ、半導体基体(10)の主面と接する導電体膜(30)とを備え、第1の層間絶縁膜(21)の側面と半導体基体(10)の主面とのなす第1の傾斜角S1が、第2の層間絶縁膜(22)の側面の延長線と半導体基体(10)の主面とのなす第2の傾斜角S2よりも小さく、第2の層間絶縁膜(22)の上面が、開口部の上端から外側に向けて次第に半導体基体(10)に近づくように傾斜している。
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