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1. WO2020065707 - SUBSTRATE PROCESSING DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

Publication Number WO/2020/065707
Publication Date 02.04.2020
International Application No. PCT/JP2018/035342
International Filing Date 25.09.2018
IPC
H01L 21/31 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
31to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After-treatment of these layers; Selection of materials for these layers
C23C 16/455 2006.01
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes
44characterised by the method of coating
455characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
H01L 21/318 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
31to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After-treatment of these layers; Selection of materials for these layers
314Inorganic layers
318composed of nitrides
Applicants
  • 株式会社KOKUSAI ELECTRIC KOKUSAI ELECTRIC CORPORATION [JP]/[JP]
Inventors
  • 西堂 周平 SAIDO Shuhei
  • 佐々木 隆史 SASAKI Takafumi
  • 吉田 秀成 YOSHIDA Hidenari
Agents
  • ポレール特許業務法人 POLAIRE I.P.C.
Priority Data
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) SUBSTRATE PROCESSING DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
(FR) DISPOSITIF DE TRAITEMENT DE SUBSTRAT ET PROCÉDÉ DE FABRICATION DE DISPOSITIF À SEMI-CONDUCTEUR
(JA) 基板処理装置及び半導体装置の製造方法
Abstract
(EN)
This substrate processing device mitigates nonuniformity (loading effect) between the surfaces of a plurality of wafers when arranging and processing the plurality of wafers, the substrate processing device comprising: a substrate holding tool for arranging and holding a plurality of substrates at predetermined intervals; a reaction tube that accommodates the substrate holding tool, and that has a ceiling closing the upper end thereof and has an opening, on the lower side thereof, through which the substrate holding tool can enter and exit; a furnace body that surrounds the upper and lateral sides of the reaction tube; a lid that directly or indirectly holds the substrate holding tool and blocks the opening; and a gas supply mechanism that provides a gas flow parallel to the respective front-side surfaces of the plurality of substrates held by the substrate holding tool inside the reaction tube. The substrate holding tool is configured to hold: a product substrate or monitor substrate on which an integrated circuit pattern is formed; and a dummy substrate having a thermal sprayed Si layer on the front-side surface at positions on both sides sandwiching the product substrate or monitor substrate.
(FR)
L'invention concerne un dispositif de traitement de substrat qui atténue la non-uniformité (effet de chargement) entre les surfaces d'une pluralité de tranches lors de l'agencement et du traitement de la pluralité de tranches, le dispositif de traitement de substrat comprenant : un outil de maintien de substrat pour agencer et maintenir une pluralité de substrats à des intervalles prédéterminés ; un tube de réaction qui reçoit l'outil de maintien de substrat, et qui a un plafond fermant l'extrémité supérieure de celui-ci et a une ouverture, sur le côté inférieur de celui-ci, à travers lequel l'outil de maintien de substrat peut entrer et sortir ; un corps de four qui entoure les côtés supérieur et latéral du tube de réaction ; un couvercle qui maintient directement ou indirectement l'outil de maintien de substrat et bloque l'ouverture ; et un mécanisme d'alimentation en gaz qui fournit un écoulement de gaz parallèle aux surfaces côté avant respectives de la pluralité de substrats maintenus par l'outil de maintien de substrat à l'intérieur du tube de réaction. L'outil de maintien de substrat est configuré pour contenir : un substrat de produit ou un substrat de surveillance sur lequel est formé un motif de circuit intégré ; et un substrat factice ayant une couche de Si pulvérisée thermiquement sur la surface côté avant au niveau de positions sur les deux côtés prenant en sandwich le substrat de produit ou le substrat de surveillance.
(JA)
ウェハを複数枚並べて処理する際の複数のウェハの面間不均一性(ローディングエフェクト)を緩和する基板処理装置を、複数の基板を所定の間隔で配列されて保持する基板保持具と、上端を閉塞する天井と下方に基板保持具を出し入れ可能な開口とを備えて基板保持具を収容する反応管と、この反応管の上方及び側方を取り囲む炉体と、基板保持具を直接または間接に保持するとともに開口を塞ぐ蓋と、反応管内で基板保持具に保持された複数の基板のそれぞれの表側面に対して表側面に平行なガスの流れを提供するガス供給機構とを備えて構成し、基板保持具は、集積回路パターンが形成された製品基板もしくはモニター基板と、この製品基板もしくはモニター基板を挟む両側の位置に表側面にSi溶射層が形成されたダミー基板とを保持するように構成した。
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