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1. WO2020065572 - A NITRIDE BASED SENSOR

Publication Number WO/2020/065572
Publication Date 02.04.2020
International Application No. PCT/IB2019/058171
International Filing Date 26.09.2019
IPC
G01N 27/407 2006.01
GPHYSICS
01MEASURING; TESTING
NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
27Investigating or analysing materials by the use of electric, electro-chemical, or magnetic means
26by investigating electrochemical variables; by using electrolysis or electrophoresis
403Cells and electrode assemblies
406Cells and probes with solid electrolytes
407for investigating or analysing gases
G01N 33/00 2006.01
GPHYSICS
01MEASURING; TESTING
NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
33Investigating or analysing materials by specific methods not covered by groups G01N1/-G01N31/131
CPC
G01N 27/414
GPHYSICS
01MEASURING; TESTING
NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
27Investigating or analysing materials by the use of electric, electro-chemical, or magnetic means
26by investigating electrochemical variables; by using electrolysis or electrophoresis
403Cells and electrode assemblies
414Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
G01N 33/005
GPHYSICS
01MEASURING; TESTING
NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
33Investigating or analysing materials by specific methods not covered by groups G01N1/00 - G01N31/00
0004Gaseous mixtures, e.g. polluted air
0009General constructional details of gas analysers, e.g. portable test equipment
0027concerning the detector
0036Specially adapted to detect a particular component
005for H2
Applicants
  • UNITED ARAB EMIRATES UNIVERSITY [AE]/[AE]
Inventors
  • NAJAR, Adel
Agents
  • AL TAMIMI & COMPANY
Priority Data
16/142,67126.09.2018US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) A NITRIDE BASED SENSOR
(FR) CAPTEUR À BASE DE NITRURE
Abstract
(EN)
The present invention discloses a nitride based sensor including a nitride based semiconductor, wherein a plurality of metal nanoparticles are attached to a surface of the nitride based semiconductor, and the surface of the nitride based semiconductor is passivated with at least one thiol compound. The present invention also provides a method of fabricating a nitride-based sensor. The present invention also discloses a porous gallium nitride (GaN) based H2 gas sensor, comprising a GaN based semiconductor with a plurality of Pt nanoparticles attached to a surface, wherein the GaN based semiconductor is passivated with a thiol compound, and wherein the sensor exhibits responsiveness of at least 60% for detection of H2 at a concentration of 30 ppm at room temperature.
(FR)
La présente invention concerne un capteur à base de nitrure comprenant un semi-conducteur à base de nitrure, une pluralité de nanoparticules métalliques étant fixées à une surface du semi-conducteur à base de nitrure, et la surface du semi-conducteur à base de nitrure étant passivée avec au moins un composé thiol. La présente invention concerne en outre un procédé de fabrication d’un capteur à base de nitrure. La présente invention concerne également un capteur de gaz H2 à base de nitrure de gallium (GaN) poreux, comprenant un semi-conducteur à base de GaN avec une pluralité de nanoparticules de Pt fixées à une surface, le semi-conducteur à base de GaN étant passivé avec un composé thiol, et le capteur présentant une réactivité d’au moins 60 % pour la détection de H2 à une concentration de 30 ppm à température ambiante.
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