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1. WO2020065425 - PROCESS MODULE AND INSTALLATION COMPRISING AT LEAST ONE SUCH PROCESS MODULE

Publication Number WO/2020/065425
Publication Date 02.04.2020
International Application No. PCT/IB2019/057438
International Filing Date 04.09.2019
IPC
H01J 37/32 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
37Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
32Gas-filled discharge tubes
C23C 16/50 2006.01
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes
44characterised by the method of coating
50using electric discharges
CPC
C23C 16/042
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
04Coating on selected surface areas, e.g. using masks
042using masks
C23C 16/4581
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
44characterised by the method of coating
458characterised by the method used for supporting substrates in the reaction chamber
4581characterised by material of construction or surface finish of the means for supporting the substrate
C23C 16/4585
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
44characterised by the method of coating
458characterised by the method used for supporting substrates in the reaction chamber
4582Rigid and flat substrates, e.g. plates or discs
4583the substrate being supported substantially horizontally
4585Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds
C23C 16/50
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
44characterised by the method of coating
50using electric discharges
H01J 37/32091
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
37Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
32Gas-filled discharge tubes, ; e.g. for surface treatment of objects such as coating, plating, etching, sterilising or bringing about chemical reactions
32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
32082Radio frequency generated discharge
32091the radio frequency energy being capacitively coupled to the plasma
H01J 37/32477
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
37Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
32Gas-filled discharge tubes, ; e.g. for surface treatment of objects such as coating, plating, etching, sterilising or bringing about chemical reactions
32431Constructional details of the reactor
32458Vessel
32477characterised by the means for protecting vessels or internal parts, e.g. coatings
Applicants
  • MEYER BURGER (GERMANY) GMBH [DE]/[DE]
Inventors
  • MAI, Joachim
  • DECKER, Daniel
  • SCHMIDT, Christian
  • LACHENAL, Damien
Agents
  • STEINIGER, Carmen
Priority Data
DE 10 2018 123 523.225.09.2018DE
Publication Language German (DE)
Filing Language German (DE)
Designated States
Title
(DE) PROZESSMODUL UND ANLAGE MIT WENIGSTENS EINEM SOLCHEN PROZESSMODUL
(EN) PROCESS MODULE AND INSTALLATION COMPRISING AT LEAST ONE SUCH PROCESS MODULE
(FR) MODULE DE PROCESSUS ET INSTALLATION COMPRENANT AU MOINS UN TEL MODULE DE PROCESSUS
Abstract
(DE)
Die vorliegende Erfindung beinhaltet ein Prozessmodul mit einer Prozesskammer und einer horizontal in dem Prozessmodul bewegbaren flächigen Trägervorrichtung mit einem Substrataufnahmebereich zur Aufnahme von Substraten und einem seitlich an und/oder um den Substrataufnahmebereich vorgesehenen Außenrandbereich. Die Position der Trägervorrichtung und/oder einer unter der Trägervorrichtung vorgesehenen Temperierplatte ist in einer Schließrichtung quer zu der Substrattransportrichtung derart veränderbar, dass die Trägervorrichtung und/oder die Temperierplatte einen Boden der Prozesskammer ausbilden kann. Das Prozessmodul weist ferner ein Transportsystem zum Transportieren der Trägervorrichtung zu und weg von der Prozesskammer auf. Die Prozesskammer ist eine Plasmakammer mit einer Gasdusche, die mit der Trägervorrichtung eine Parallelplattenanordnung ausbildet. An wenigstens einer Seitenwand der Prozesskammer, zwischen der Gasdusche und der Trägervorrichtung, ist wenigstens ein in den Prozesskammerinnenraum hinein ragendes Maskenelement vorgesehen, das wenigstens 50 % der Oberfläche des Außenrandbereiches der Trägervorrichtung abdeckt. Die Erfindung beinhaltet zudem eine Anlage mit wenigstens einem solchen Prozessmodul.
(EN)
The invention relates to a process module, comprising a process chamber and a planar carrier device, which is horizontally movable in the process module, having a substrate receiving area for receiving substrates, and an outer edge area provided laterally on and/or around the substrate receiving area. The position of the carrier device and/or of a temperature-control plate provided underneath the carrier device can be changed in a closing direction transversely to the substrate transport direction in such a way that the carrier device and/or the temperature-control plate can form a bottom of the process chamber. The process module further comprises a transport system for transporting the carrier device to and away from the process chamber. The process chamber is a plasma chamber having a gas shower, which together with the support device forms a parallel plate arrangement. On at least one side wall of the process chamber, between the gas shower and the carrier device, at least one mask element is provided that projects into the process chamber interior and covers at least 50% of the surface of the outer edge area of the carrier device. The invention further relates to an installation having at least one such process module.
(FR)
La présente invention concerne un module de processus comprenant une chambre de processus et un dispositif de support plan pouvant être déplacé horizontalement dans le module de processus comprenant une zone de réception de substrat pour la réception de substrats et une zone de bord extérieure prévue latéralement contre et/ou autour de la zone de réception de substrat. La position du dispositif de support et/ou d’une plaque de thermorégulation prévue en dessous du dispositif de support peut être modifiée dans une direction de fermeture perpendiculaire à la direction de transport de substrats de telle façon que le dispositif de support et/ou la plaque de thermorégulation peuvent former un fond de la chambre de processus. Le module de processus comprend en outre un système de transport pour le transport du dispositif de support vers et loin de la chambre de processus. La chambre de processus est une chambre de plasma comprenant une douche de gaz, qui forme avec le dispositif de support un ensemble de plaques parallèles. Sur au moins une paroi latérale de la chambre de processus, entre la douche de gaz et le dispositif de support, est prévu au moins un élément de masque s'étendant dans l’espace intérieur de la chambre de processus, lequel recouvre au moins 50% de la surface de la zone de bord extérieure du dispositif de support. L’invention concerne en outre une installation comprenant au moins un tel module de processus.
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