Processing

Please wait...

Settings

Settings

Goto Application

1. WO2020064947 - OPTOELECTRONIC COMPONENT HAVING A DIELECTRIC REFLECTIVE LAYER AND PRODUCTION METHOD FOR SAME

Publication Number WO/2020/064947
Publication Date 02.04.2020
International Application No. PCT/EP2019/076077
International Filing Date 26.09.2019
IPC
H01L 33/38 2010.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
36characterised by the electrodes
38with a particular shape
H01L 33/46 2010.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
44characterised by the coatings, e.g. passivation layer or anti-reflective coating
46Reflective coating, e.g. dielectric Bragg reflector
H01L 33/48 2010.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
48characterised by the semiconductor body packages
H01L 33/14 2010.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02characterised by the semiconductor bodies
14with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
CPC
H01L 2933/0016
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2933Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
0008Processes
0016relating to electrodes
H01L 2933/0025
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2933Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
0008Processes
0025relating to coatings
H01L 2933/0033
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2933Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
0008Processes
0033relating to semiconductor body packages
H01L 33/14
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02characterised by the semiconductor bodies
14with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
H01L 33/38
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
36characterised by the electrodes
38with a particular shape
H01L 33/387
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
36characterised by the electrodes
38with a particular shape
387with a plurality of electrode regions in direct contact with the semiconductor body and being electrically interconnected by another electrode layer
Applicants
  • OSRAM OPTO SEMICONDUCTORS GMBH [DE]/[DE]
Inventors
  • LEBER, Andreas
  • HERRMANN, Siegfried
  • RAFAEL, Christine
Agents
  • MÜLLER HOFFMANN & PARTNER PATENTANWÄLTE MBB
Priority Data
10 2018 123 932.727.09.2018DE
Publication Language German (DE)
Filing Language German (DE)
Designated States
Title
(DE) OPTOELEKTRONISCHES BAUELEMENT MIT DIELEKTRISCHER SPIEGELSCHICHT UND DESSEN HERSTELLUNGSVERFAHREN
(EN) OPTOELECTRONIC COMPONENT HAVING A DIELECTRIC REFLECTIVE LAYER AND PRODUCTION METHOD FOR SAME
(FR) COMPOSANT OPTOÉLECTRONIQUE COMPRENANT UNE COUCHE MIROIR DIÉLECTRIQUE ET SON PROCÉDÉ DE FABRICATION
Abstract
(DE)
Ein optoelektronisches Bauelement (10) umfasst einen optoelektronischen Halbleiterchip (11), der geeignet ist, elektromagnetische Strahlung (15) zu emittieren. Der optoelektronische Halbleiterchip (11) weist eine erste Halbleiterschicht (140) von einem ersten Leitfähigkeitstyp, eine zweite Halbleiterschicht (150) von einem zweiten Leitfähigkeitstyp, eine erste und eine zweite Stromverteilungsschicht (120, 130), eine dielektrische Spiegelschicht (115) sowie eine Vielzahl erster elektrischer Verbindungselemente (125) auf. Die erste Halbleiterschicht (140) und die zweite Halbleiterschicht (150) sind übereinandergestapelt. Von dem optoelektronischen Halbleiterchip (11) emittierte elektromagnetische Strahlung (15) wird über eine erste Hauptoberfläche (110) der zweiten Halbleiterschicht (150) ausgegeben. Die erste Stromverteilungsschicht (120) und die zweite Stromverteilungsschicht (130) sind auf einer von der zweiten Halbleiterschicht (150) abgewandten Seite der ersten Halbleiterschicht (140) angeordnet. Die dielektrische Spiegelschicht (115) ist zwischen der ersten Halbleiterschicht (140) und der ersten Stromverteilungsschicht (120) angeordnet. Die Vielzahl erster elektrischer Verbindungselemente (125) erstrecken sich durch die dielektrische Spiegelschicht (115) und sind geeignet, die erste Halbleiterschicht (140) mit der ersten Stromverteilungsschicht (180) elektrisch zu verbinden. Die zweite Stromverteilungsschicht (130) ist mit der zweiten Halbleiterschicht elektrisch verbunden.
(EN)
The invention relates to an optoelectronic component (10) comprising an optoelectronic semiconductor chip (11), which is suitable for emitting electromagnetic radiation (15). The optoelectronic semiconductor chip (11) has a first semiconductor layer (140) of a first conductivity type, a second semiconductor layer (150) of a second conductivity type, a first and a second current distribution layer (120, 130), a dielectric reflective layer (115), and a plurality of first electrical connection elements (125). The first semiconductor layer (140) and the second semiconductor layer (150) are stacked one on top of the other. Electromagnetic radiation (15) emitted by the optoelectronic semiconductor chip (11) is output via a first main surface (110) of the second semiconductor layer (150). The first current distribution layer (120) and the second current distribution layer (130) are arranged on a side of the first semiconductor layer (140) facing away from the second semiconductor layer (150). The dielectric reflective layer (115) is arranged between the first semiconductor layer (140) and the first current distribution layer (120). The plurality of first electrical connection elements (125) extend through the dielectric reflective layer (115) and are suitable to electrically connect the first semiconductor layer (140) to the first current distribution layer (180). The second current distribution layer (130) is electrically connected to the second semiconductor layer.
(FR)
L’invention concerne un composant optoélectronique (10) qui comprend une puce semi-conductrice optoélectronique (11) qui sert à émettre un rayonnement électromagnétique (15). La puce semi-conductrice optoélectronique (11) comprend une première couche semi-conductrice (140) d’un premier type de conductivité, une deuxième couche semi-conductrice (150) d’un deuxième type de conductivité, une première et une deuxième couche de répartition de courant (120, 130), une couche miroir diélectrique (115) ,ainsi qu’une pluralité de premiers éléments de connexion électrique (125). La première couche semi-conductrice (140) et la deuxième couche semi-conductrice (150) sont empilées l'une sur l'autre. Le rayonnement électromagnétique (15) émis par la puce semi-conductrice optoélectronique (11) sort par une première surface principale (110) de la deuxième couche semi-conductrice (150). La première couche de répartition de courant (120) et la deuxième couche de répartition de courant (130) sont agencées sur une face de la première couche semi-conductrice (140) opposée à la deuxième couche semi-conductrice (150). La couche miroir diélectrique (115) est disposée entre la première couche semi-conductrice (140) et la première couche de répartition de courant (120). La pluralité d’éléments de connexion électrique (125) s’étendent à travers la couche miroir diélectrique (115) et servent à connecter électriquement la première couche semi-conductrice (140) à la première couche de répartition de courant (120). La deuxième couche de répartition de courant (130) est connectée électriquement à la deuxième couche semi-conductrice.
Also published as
Latest bibliographic data on file with the International Bureau