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1. WO2020064943 - OPTOELECTRONIC SEMICONDUCTOR CHIP HAVING CONTACT ELEMENTS, AND METHOD FOR PRODUCING SAME

Publication Number WO/2020/064943
Publication Date 02.04.2020
International Application No. PCT/EP2019/076065
International Filing Date 26.09.2019
IPC
H01L 33/38 2010.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
36characterised by the electrodes
38with a particular shape
H01L 33/48 2010.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
48characterised by the semiconductor body packages
H01L 33/00 2010.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
H01L 33/14 2010.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02characterised by the semiconductor bodies
14with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
CPC
H01L 25/0753
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
25Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; ; Multistep manufacturing processes thereof
03all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L51/00, e.g. assemblies of rectifier diodes
04the devices not having separate containers
075the devices being of a type provided for in group H01L33/00
0753the devices being arranged next to each other
H01L 2933/0016
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2933Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
0008Processes
0016relating to electrodes
H01L 33/0095
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
005Processes
0095Post-treatments of the devices, e.g. annealing, recrystallisation, short-circuit elimination
H01L 33/14
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02characterised by the semiconductor bodies
14with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
H01L 33/385
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
36characterised by the electrodes
38with a particular shape
385the electrode extending at least partially onto a side surface of the semiconductor body
H01L 33/486
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
48characterised by the semiconductor body packages
483Containers
486adapted for surface mounting
Applicants
  • OSRAM OPTO SEMICONDUCTORS GMBH [DE]/[DE]
Inventors
  • LEIRER, Christian
  • SCHUMANN, Michael
Agents
  • MÜLLER HOFFMANN & PARTNER PATENTANWÄLTE MBB
Priority Data
10 2018 123 930.027.09.2018DE
Publication Language German (DE)
Filing Language German (DE)
Designated States
Title
(DE) OPTOELEKTRONISCHER HALBLEITERCHIP MIT KONTAKTELEMENTEN UND DESSEN HERSTELLUNGSVERFAHREN
(EN) OPTOELECTRONIC SEMICONDUCTOR CHIP HAVING CONTACT ELEMENTS, AND METHOD FOR PRODUCING SAME
(FR) PUCE SEMI-CONDUCTRICE OPTOÉLECTRONIQUE À ÉLÉMENTS DE CONTACT ET SON PROCÉDÉ DE FABRICATION
Abstract
(DE)
Ein optoelektronischer Halbleiterchip (11) umfasst eine erste Halbleiterschicht (110) von einem ersten Leitfähigkeitstyp, eine zweite Halbleiterschicht (120) von einem zweiten Leitfähigkeitstyp, eine erste und eine zweite Stromverteilungsschicht (123, 132), und ein erstes und ein zweites Kontaktelement (127, 137). Die erste und die zweite Halbleiterschicht (110, 120) bildeneinen Schichtstapel.Die erste Stromverteilungsschicht (123) ist auf einer von der zweiten Halbleiterschicht (150) abgewandten Seite der ersten Halbleiterschicht (140) angeordnet und mit der ersten Halbleiterschicht (110) elektrisch leitend verbunden. Die zweite Stromverteilungsschicht (132) ist auf der von der zweiten Halbleiterschicht (150) abgewandten Seite der ersten Halbleiterschicht (140) angeordnet und mit der zweiten Halbleiterschicht (120) elektrisch leitend verbunden. Das erste Kontaktelement (127) ist mit der ersten Stromverteilungsschicht (123) verbunden. Das zweite Kontaktelement (137) ist mit der zweiten Stromverteilungsschicht (132) verbunden. Das erste oder zweite Kontaktelement (127, 137) erstrecktsich lateral bis zu mindestens einer Seitenfläche (103) des optoelektronischen Halbleiterchips (11).
(EN)
An optoelectronic semiconductor chip (11) comprises a first semiconductor layer (110) of a first conductivity type, a second semiconductor layer (120) of a second conductivity type, a first and a second current distribution layer (123, 132), and a first and a second contact element (127, 137). The first and second semiconductor layers (110, 120) form a layer stack.The first current distribution layer (123) is situated on a side of the first semiconductor layer (140) facing away from the second semiconductor layer (150) and is electrically conductively connected to the first semiconductor layer (110).The second current distribution layer (132) is situated on the side of the first semiconductor layer (140) facing away from the second semiconductor layer (150) and is electrically conductively connected to the second semiconductor layer (120). The first contact element (127) is connected to the first current distribution layer (123). The second contact element (137) is connected to the second current distribution layer (132). The first or second contact element (127, 137) extends laterally as far as at least one side face (103) of the optoelectronic semiconductor chip (11).
(FR)
L’invention concerne une puce semi-conductrice optoélectronique (11) qui comprend une première couche semi-conductrice (110) d’un premier type de conductivité, une deuxième couche semi-conductrice (120) d’un deuxième type de conductivité, une première et une deuxième couche de répartition de courant (123, 132), et un premier et un deuxième élément de contact (127, 137). La première et la deuxième couche semi-conductrice (110, 120) forment un empilement de couches. La première couche de répartition de courant (123) est agencée sur une face de la première couche semi-conductrice (140) détournée de la deuxième couche semi-conductrice (150) et connectée de manière électriquement conductrice à la première couche semi-conductrice (110). La deuxième couche de répartition de courant (132) est agencée sur la face de la première couche semi-conductrice (140) détournée de la deuxième couche semi-conductrice (150) et connectée de manière électriquement conductrice à la deuxième couche semi-conductrice (120). Le premier élément de contact (127) est connecté à la première couche de répartition de courant (123). Le deuxième élément de contact (137) est connecté à la deuxième couche de répartition de courant (132). Le premier ou le deuxième élément de contact (127, 137) s’étend latéralement jusqu’à au moins une surface latérale (103) de la puce semi-conductrice optoélectronique (11).
Also published as
Latest bibliographic data on file with the International Bureau