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1. WO2020064892 - OPTOELECTRONIC SEMICONDUCTOR COMPONENT HAVING A SAPPHIRE SUPPORT AND METHOD FOR THE PRODUCTION THEREOF

Publication Number WO/2020/064892
Publication Date 02.04.2020
International Application No. PCT/EP2019/075955
International Filing Date 25.09.2019
IPC
H01L 33/14 2010.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02characterised by the semiconductor bodies
14with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
H01L 33/22 2010.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02characterised by the semiconductor bodies
20with a particular shape, e.g. curved or truncated substrate
22Roughened surfaces, e.g. at the interface between epitaxial layers
H01L 33/38 2010.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
36characterised by the electrodes
38with a particular shape
CPC
H01L 2933/0091
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2933Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
0091Scattering means in or on the semiconductor body or semiconductor body package
H01L 33/14
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02characterised by the semiconductor bodies
14with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
H01L 33/22
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02characterised by the semiconductor bodies
20with a particular shape, e.g. curved or truncated substrate
22Roughened surfaces, e.g. at the interface between epitaxial layers
H01L 33/382
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
36characterised by the electrodes
38with a particular shape
382the electrode extending partially in or entirely through the semiconductor body
Applicants
  • OSRAM OPTO SEMICONDUCTORS GMBH [DE]/[DE]
Inventors
  • HOEPPEL, Lutz
  • MOLNAR, Attila
Agents
  • MÜLLER HOFFMANN & PARTNER PATENTANWÄLTE MBB
Priority Data
10 2018 123 931.927.09.2018DE
Publication Language German (DE)
Filing Language German (DE)
Designated States
Title
(DE) OPTOELEKTRONISCHES HALBLEITERBAUELEMENT MIT SAPHIRTRÄGER UND DESSEN HERSTELLUNGSVERFAHREN
(EN) OPTOELECTRONIC SEMICONDUCTOR COMPONENT HAVING A SAPPHIRE SUPPORT AND METHOD FOR THE PRODUCTION THEREOF
(FR) COMPOSANT À SEMI-CONDUCTEUR OPTOÉLECTRONIQUE À SUPPORT EN SAPHIR SON PROCÉDÉ DE FABRICATION
Abstract
(DE)
Gemäß Ausführungsformen umfasst ein optoelektronisches Halbleiterbauelement (10) einen optoelektronischen Halbleiterchip (15), ein Verbindungsmaterial (125), welches amorphes Aluminiumoxid enthält, und einen Saphirträger (120). Das Verbindungsmaterial (125) grenzt direkt an den Saphirträger (120) an. Der optoelektronische Halbleiterchip (10) ist über das Aluminiumoxid enthaltende Verbindungsmaterial (125) mit dem Saphirträger (120) verbunden.
(EN)
Embodiments of the invention relate to an optoelectronic semiconductor component (10) comprising an optoelectronic semiconductor chip (15), a connection material (125), which contains amorphous aluminum oxide, and a sapphire support (120). The connection material (125) directly adjoins the sapphire support (120). The optoelectronic semiconductor chip (10) is connected to the sapphire support (120) by means of the connection material (125) containing aluminum oxide.
(FR)
Selon des modes de réalisation, un composant à semi-conducteur optoélectronique (10) comprend une puce semi-conductrice optoélectronique (15), un matériau de liaison (125) qui contient de l'oxyde d'aluminium amorphe, et un support en saphir (120). Le matériau de liaison (125) jouxte directement le support en saphir (120). La puce semi-conductrice optoélectronique (10) est reliée au support en saphir (120) par l’intermédiaire du matériau de liaison (125) contenant de l’oxyde d’aluminium.
Also published as
Latest bibliographic data on file with the International Bureau