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1. WO2020064670 - SEMICONDUCTOR COMPONENT AND METHOD FOR SINGULATING A SEMICONDUCTOR COMPONENT HAVING A PN JUNCTION

Publication Number WO/2020/064670
Publication Date 02.04.2020
International Application No. PCT/EP2019/075603
International Filing Date 24.09.2019
IPC
H01L 31/068 2012.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
04adapted as photovoltaic conversion devices
06characterised by at least one potential-jump barrier or surface barrier
068the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
H01L 31/18 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
18Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
CPC
H01L 23/3171
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
28Encapsulations, e.g. encapsulating layers, coatings, ; e.g. for protection
31characterised by the arrangement ; or shape
3157Partial encapsulation or coating
3171the coating being directly applied to the semiconductor body, e.g. passivation layer
H01L 23/3185
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
28Encapsulations, e.g. encapsulating layers, coatings, ; e.g. for protection
31characterised by the arrangement ; or shape
3157Partial encapsulation or coating
3185the coating covering also the sidewalls of the semiconductor body
H01L 31/0216
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
02Details
0216Coatings
H01L 31/068
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
04adapted as photovoltaic [PV] conversion devices
06characterised by at least one potential-jump barrier or surface barrier
068the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
H01L 31/18
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
18Processes or apparatus peculiar to the manufacture or treatment of these devices or of parts thereof
H01L 31/1804
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
18Processes or apparatus peculiar to the manufacture or treatment of these devices or of parts thereof
1804comprising only elements of Group IV of the Periodic System
Applicants
  • FRAUNHOFER-GESELLSCHAFT ZUR FÖRDERUNG DER ANGEWANDTEN FORSCHUNG E. V. [DE]/[DE]
Inventors
  • LOHMÜLLER, Elmar
  • PREU, Ralf
  • BALIOZIAN, Puzant
  • FELLMETH, Tobias
  • WÖHRLE, Nico
  • SAINT-CAST, Pierre
  • CLEMENT, Florian
  • BRAND, Andreas
Agents
  • LEMCKE, BROMMER & PARTNER PATENTANWÄLTE PARTNERSCHAFT MBB
Priority Data
10 2018 123 485.624.09.2018DE
Publication Language German (DE)
Filing Language German (DE)
Designated States
Title
(DE) HALBLEITERBAUELEMENT UND VERFAHREN ZUM VEREINZELN EINES HALBLEITERBAUELEMENTS MIT EINEM PN-ÜBERGANG
(EN) SEMICONDUCTOR COMPONENT AND METHOD FOR SINGULATING A SEMICONDUCTOR COMPONENT HAVING A PN JUNCTION
(FR) COMPOSANT SEMI-CONDUCTEUR ET PROCÉDÉ DE SÉPARATION D’UN COMPOSANT SEMI-CONDUCTEUR AVEC UNE TRANSITION PN
Abstract
(DE)
Die Erfindung betrifft ein Halbleiterbauelement (1 a, 1 b) mit einer Vorder- und einer gegenüberliegenden Rückseite sowie Seitenflächen, sowie zumindest ein Emitter (2a, 2b) und zumindest einer Basis (3a, 3b), wobei zwischen Emitter (2a, 2b) und Basis (3a, 3b) ein pn-Übergang (4a, 4b) ausge- bildet ist und der Emitter (2a, 2b) sich parallel zu der Vorder- und/oder Rücksei- te erstreckt. Wesentlich ist, dass zumindest eine Seitenfläche eine passivierte Trennfläche (T) ist, an der eine T rennflächen passivierungsschicht (6a, 6b) an- geordnet ist, welche ortsfeste Ladungen mit einer Flächen ladungsdichte an der Trennfläche (T) im Betrag größer gleich 1012 cm-2 aufweist. Die Erfindung betrifft weiterhin ein Verfahren zum Vereinzeln eines Halbleiterbauelementes (1 a, 1 b) mit einem pn-Übergang.
(EN)
The invention relates to a semiconductor component (1a, 1b) having a front side and an opposite rear side and also side surfaces, and also at least one emitter (2a, 2b) and at least one base (3a, 3b), wherein a pn junction (4a, 4b) is formed between emitter (2a, 2b) and base (3a, 3b) and the emitter (2a, 2b) extends parallel to the front and/or rear side. What is essential is that at least one side surface is a passivated separating surface (T), at which a separating surface passivation layer (6a, 6b) is arranged, which has stationary charges having a surface charge density at the separating surface (T) with a magnitude of greater than or equal to 1012 cm-2. The invention furthermore relates to a method for singulating a semiconductor component (1a, 1b) having a pn junction.
(FR)
La présente invention concerne un composant semi-conducteur (1a, 1b) ayant une face avant et une face arrière opposée ainsi que des surfaces latérales, et également un émetteur (2a, 2b) et au moins une base (3a, 3b), une transition PN (4a, 4b) étant formée entre l’émetteur (2a, 2b) et la base (3a, 3b), et l’émetteur (2a, 2b) s’étendant parallèlement à la face avant et/ou à la face arrière. Selon l’invention, il est essentiel qu’au moins une surface latérale soit une surface de séparation (T) passivée au niveau de laquelle est disposée une couche de passivation de surface de séparation (6a, 6b) qui comprend des charges fixes ayant une densité de charges superficielles au niveau de la surface de séparation (T) d’une valeur supérieure ou égale à 1012 cm-2. La présente invention concerne en outre un procédé de séparation d’un composant semi-conducteur (1a, 1b) avec une transition PN.
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Latest bibliographic data on file with the International Bureau