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1. WO2020062706 - SILICON-BASED GERMANIUM-TIN TRANSISTOR WITH HIGH ELECTRON MOBILITY

Publication Number WO/2020/062706
Publication Date 02.04.2020
International Application No. PCT/CN2019/070518
International Filing Date 05.01.2019
IPC
H01L 29/161 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
02Semiconductor bodies
12characterised by the materials of which they are formed
16including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System in uncombined form
161including two or more of the elements provided for in group H01L29/1688
H01L 29/778 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66Types of semiconductor device
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76Unipolar devices
772Field-effect transistors
778with two-dimensional charge carrier gas channel, e.g. HEMT
CPC
H01L 29/161
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
02Semiconductor bodies ; ; Multistep manufacturing processes therefor
12characterised by the materials of which they are formed
16including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
161including two or more of the elements provided for in group H01L29/16 ; , e.g. alloys
H01L 29/778
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
66Types of semiconductor device ; ; Multistep manufacturing processes therefor
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
76Unipolar devices ; , e.g. field effect transistors
772Field effect transistors
778with two-dimensional charge carrier gas channel, e.g. HEMT ; ; with two-dimensional charge-carrier layer formed at a heterojunction interface
Applicants
  • 中国科学院上海微系统与信息技术研究所 SHANGHAI INSTITUTE OF MIRCOSYSTEM AND INFORMATION TECHNOLOGY, CHINESE ACADEMY OF SCIENCES [CN]/[CN]
  • 上海新微科技服务有限公司 SHANGHAI INTERNATIONAL MICRO-TECH AFFILIATION CENTER [CN]/[CN]
Inventors
  • 汪巍 WANG, Wei
  • 方青 FANG, Qing
  • 涂芝娟 TU, Zhijuan
  • 曾友宏 ZENG, Youhong
  • 蔡艳 CAI, Yan
  • 王庆 WANG, Qing
  • 王书晓 WANG, Shuxiao
  • 余明斌 YU, Mingbin
Agents
  • 上海骁象知识产权代理有限公司 SHANGHAI XIAOXIANG INTELLECTUAL PROPERTY AGENCY CO.
Priority Data
201821596246.X27.09.2018CN
Publication Language Chinese (ZH)
Filing Language Chinese (ZH)
Designated States
Title
(EN) SILICON-BASED GERMANIUM-TIN TRANSISTOR WITH HIGH ELECTRON MOBILITY
(FR) TRANSISTOR GERMANIUM-ÉTAIN À BASE DE SILICIUM À MOBILITÉ ÉLECTRONIQUE ÉLEVÉE
(ZH) 一种硅基锗锡高电子迁移率晶体管
Abstract
(EN)
A silicon-based germanium-tin transistor with high electron mobility (1). The silicon-based germanium-tin transistor with high electron mobility (1) comprises: a silicon-based substrate (11); a buffer layer (12) located on the silicon-based substrate (11); a channel layer (13) located on the buffer layer (12), wherein the channel layer (13) is a germanium-tin (GeSn) material; and a spacer layer (14), a barrier layer (15), and a capping layer (16) located on the channel layer (13), wherein the spacer layer (14), the barrier layer (15), and the capping layer (16) ) are a III-V semiconductor material, and a two-dimensional electron gas is formed at the interface between the spacer layer (14) and the channel layer (13), and the buffer layer (12) has a thickness greater than 500 nm. The present invention can improve the high-speed performance of transistors, and GeSn is easy to integrate with Si-based integrated circuit manufacturing technologies.
(FR)
L'invention concerne un transistor au germanium-étain à base de silicium ayant une mobilité électronique élevée (1). Le transistor au germanium-étain à base de silicium ayant une mobilité électronique élevée (1) comprend : un substrat à base de silicium (11) ; une couche tampon (12) située sur le substrat à base de silicium (11) ; une couche de canal (13) située sur la couche tampon (12), la couche de canal (13) étant un matériau de germanium-étain (GeSn) ; et une couche d'espacement (14), une couche barrière (15), et une couche de recouvrement (16) située sur la couche de canal (13), la couche d'espacement (14), la couche barrière (15) et la couche de recouvrement (16) sont un matériau semi-conducteur III-V, et un gaz d'électrons bidimensionnel est formé au niveau de l'interface entre la couche d'espacement (14) et la couche de canal (13), et la couche tampon (12) a une épaisseur supérieure à 500 nm. La présente invention peut améliorer les performances à grande vitesse de transistors, et du GeSn est facile à intégrer avec des technologies de fabrication de circuit intégré à base de Si.
(ZH)
一种硅基锗锡高电子迁移率晶体管(1),该硅基锗锡高电子迁移率晶体管(1)包括:硅基衬底(11);位于所述硅基衬底(11)上的缓冲层(12);位于所述缓冲层(12)上的沟道层(13),所述沟道层(13)为锗锡(GeSn)材料;以及位于所述沟道层(13)上的间隔层(14),势垒层(15)和盖层(16),所述间隔层(14),势垒层(15)和盖层(16)为III-V族半导体材料,其中,所述间隔层(14)与沟道层(13)的界面形成二维电子气,所述缓冲层(12)厚度大于500nm。能够提高晶体管的高速性能,并且,GeSn容易与Si基集成电路制造技术集成。
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