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1. WO2020062705 - PHASE SHIFTER AND SILICON-BASED ELECTRO-OPTICAL MODULATOR

Publication Number WO/2020/062705
Publication Date 02.04.2020
International Application No. PCT/CN2019/070517
International Filing Date 05.01.2019
IPC
G02F 1/015 2006.01
GPHYSICS
02OPTICS
FDEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH IS MODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THE DEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY, COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g. SWITCHING, GATING, MODULATING OR DEMODULATING; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
1Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
01for the control of the intensity, phase, polarisation or colour
015based on semiconductor elements with at least one potential jump barrier, e.g. PN, PIN junction
G02F 1/05 2006.01
GPHYSICS
02OPTICS
FDEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH IS MODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THE DEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY, COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g. SWITCHING, GATING, MODULATING OR DEMODULATING; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
1Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
01for the control of the intensity, phase, polarisation or colour
03based on ceramics or electro-optical crystals, e.g. exhibiting Pockels or Kerr effect
05with ferro-electric properties
CPC
G02F 1/015
GPHYSICS
02OPTICS
FDEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH IS MODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THE DEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY, COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g. SWITCHING, GATING, MODULATING OR DEMODULATING; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
1Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics
01for the control of the intensity, phase, polarisation or colour 
015based on semiconductor elements with at least one potential jump barrier, e.g. PN, PIN junction
G02F 1/05
GPHYSICS
02OPTICS
FDEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH IS MODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THE DEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY, COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g. SWITCHING, GATING, MODULATING OR DEMODULATING; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
1Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics
01for the control of the intensity, phase, polarisation or colour 
03based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect
05with ferro-electric properties
Applicants
  • 中国科学院上海微系统与信息技术研究所 SHANGHAI INSTITUTE OF MIRCOSYSTEM AND INFORMATION TECHNOLOGY, CHINESE ACADEMY OF SCIENCES [CN]/[CN]
  • 上海新微科技服务有限公司 SHANGHAI INTERNATIONAL MICRO-TECH AFFILIATION CENTER [CN]/[CN]
Inventors
  • 涂芝娟 TU, Zhijuan
  • 汪巍 WANG, Wei
  • 方青 FANG, Qing
  • 余明斌 YU, Mingbin
Agents
  • 上海骁象知识产权代理有限公司 SHANGHAI XIAOXIANG INTELLECTUAL PROPERTY AGENCY CO.
Priority Data
201821583248.527.09.2018CN
Publication Language Chinese (ZH)
Filing Language Chinese (ZH)
Designated States
Title
(EN) PHASE SHIFTER AND SILICON-BASED ELECTRO-OPTICAL MODULATOR
(FR) DÉPHASEUR ET MODULATEUR ÉLECTRO-OPTIQUE À BASE DE SILICIUM
(ZH) 相移器及硅基电光调制器
Abstract
(EN)
Disclosed are a phase shifter (10) and a silicon-based electro-optical modulator. The phase shifter (10) comprises: a first-doped type semiconductor layer (101); a second-doped type semiconductor layer (102) spaced apart from the first-doped type semiconductor layer (101); a first dielectric layer (103) located between the first-doped type semiconductor layer (101) and the second-doped type semiconductor layer (102); a second dielectric layer (104) located between the first dielectric layer (103) and the second-doped type semiconductor layer (102); and an inserted material layer (105) located between the first dielectric layer (103) and the second dielectric layer (104), the inserted material layer (105) generating a negative capacitance effect under the action of an external driving voltage, and the inserted material layer (105) comprising a ferroelectric material layer. According to the phase shifter (10), by means of additively providing the inserted material layer (105) that can generate a negative capacitance effect under the action of an external driving voltage, the negative capacitance effect enables an internal voltage of the phase shifter (10) to be amplified, and when the phase shifter (10) is applied to a silicon-based electro-optical modulator, an external driving voltage required for normal operation of the silicon-based electro-optical modulator can be reduced, thereby greatly improving the modulation efficiency of the silicon-based electro-optical modulator, and reducing the power consumption of the silicon-based electro-optical modulator.
(FR)
L'invention concerne un déphaseur (10) et un modulateur électro-optique à base de silicium. Le déphaseur (10) comprend : une couche semi-conductrice de premier type dopé (101) ; une couche semi-conductrice de second type dopé (102) espacée de la couche semi-conductrice de premier type dopé (101) ; une première couche diélectrique (103) située entre la couche semi-conductrice de premier type dopé (101) et la couche semi-conductrice de second type dopé (102) ; une seconde couche diélectrique (104) située entre la première couche diélectrique (103) et la couche semi-conductrice de second type dopé (102) ; et une couche de matériau inséré (105) située entre la première couche diélectrique (103) et la seconde couche diélectrique (104), la couche de matériau inséré (105) générant un effet de capacité négative sous l'action d'une tension d'attaque externe, et la couche de matériau inséré (105) comprenant une couche de matériau ferroélectrique. Selon le déphaseur (10), au moyen de la fourniture de manière additive de la couche de matériau inséré (105) qui peut générer un effet de capacité négative sous l'action d'une tension d'attaque externe, l'effet de capacité négative permet à une tension interne du déphaseur (10) d'être amplifiée, et lorsque le déphaseur (10) est appliqué à un modulateur électro-optique à base de silicium, une tension d'attaque externe requise pour un fonctionnement normal du modulateur électro-optique à base de silicium peut être réduite, améliorant ainsi considérablement l'efficacité de modulation du modulateur électro-optique à base de silicium et réduit la consommation électrique du modulateur électro-optique à base de silicium.
(ZH)
一种相移器(10)及硅基电光调制器,相移器(10)包括:第一掺杂类型半导体层(101);第二掺杂类型半导体层(102),与第一掺杂类型半导体层(101)间隔排布;第一介质层(103),位于第一掺杂类型半导体层(101)与第二掺杂类型半导体层(102)之间;第二介质层(104),位于第一介质层(103)与第二掺杂类型半导体层(102)之间;插入材料层(105),位于第一介质层(103)与第二介质层(102)之间,插入材料层(105)在外部驱动电压的作用下产生负电容效应,插入材料层(105)包括铁电材料层。该相移器(10)通过增设在外部驱动电压的作用下可以产生负电容效应的插入材料层(105),负电容效应可使得相移器(10)内部电压得到放大,当相移器(10)用于硅基电光调制器时,可以减小硅基电光调制器正常工作所需的外部驱动电压,大大提高硅基电光调制器的调制效率,降低硅基电光调制器的功耗。
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