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1. WO2020062468 - ELECTRICAL READOUT OPTICAL SENSOR

Publication Number WO/2020/062468
Publication Date 02.04.2020
International Application No. PCT/CN2018/114869
International Filing Date 09.11.2018
IPC
H01L 31/0232 2014.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02Details
0232Optical elements or arrangements associated with the device
H01L 31/108 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
08in which radiation controls flow of current through the device, e.g. photoresistors
10characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
101Devices sensitive to infra-red, visible or ultra-violet radiation
102characterised by only one potential barrier or surface barrier
108the potential barrier being of the Schottky type
CPC
H01L 31/02327
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
02Details
0232Optical elements or arrangements associated with the device
02327the optical elements being integrated or being directly associated to the device, e.g. back reflectors
H01L 31/1085
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
08in which radiation controls flow of current through the device, e.g. photoresistors
10characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
101Devices sensitive to infra-red, visible or ultra-violet radiation
102characterised by only one potential barrier or surface barrier
108the potential barrier being of the Schottky type
1085the devices being of the Metal-Semiconductor-Metal [MSM] Schottky barrier type
Applicants
  • 暨南大学 JINAN UNIVERSITY [CN]/[CN]
Inventors
  • 文龙 WEN, Long
  • 陈沁 CHEN, Qin
  • 李宝军 LI, Baojun
Agents
  • 广州市华学知识产权代理有限公司 GUANGZHOU HUAXUE INTELLECTUAL PROPERTY AGENCY CO., LTD.
Priority Data
201811138819.928.09.2018CN
Publication Language Chinese (ZH)
Filing Language Chinese (ZH)
Designated States
Title
(EN) ELECTRICAL READOUT OPTICAL SENSOR
(FR) CAPTEUR OPTIQUE À LECTURE ÉLECTRIQUE
(ZH) 一种电读出光学传感器
Abstract
(EN)
An electrical readout optical sensor, comprising a back metal electrode layer (4), a semiconductor layer (1), and a metal or metalloid layer (2); wherein the semiconductor layer (1) is a main body portion and is divided into a first surface and a second surface; the first surface is provided with a groove structure, and forms a grating (3); the back metal electrode layer (4) covers the second surface of the semiconductor layer (1); the metal or metalloid layer (2) covers the first surface of the semiconductor layer (1), and forms a phototube for generating a photocurrent signal having a wide wavelength range and high linearity. An optical sensing structure of narrowband light absorption and a photoelectric conversion structure having a wide wavelength range are directly integrated, and the portable high-precision optical sensing ability is implemented by means of an output mode of a photocurrent.
(FR)
L'invention porte sur un capteur optique à lecture électrique, comprenant une couche d'électrode métallique arrière (4), une couche semi-conductrice (1), et une feuille métallique ou métalloïde (2) ; la couche semi-conductrice (1) étant une partie corps principal et étant divisée en une première surface et une seconde surface ; la première surface étant pourvue d'une structure de rainures, et formant un réseau (3) ; la couche d'électrode métallique arrière (4) recouvrant la seconde surface de la couche semi-conductrice (1) ; la couche métallique ou métalloïde (2) recouvrant la première surface de la couche semi-conductrice (1), et formant un phototube destiné à générer un signal de photocourant ayant une large plage de longueurs d'onde et une grande linéarité. Une structure de détection optique d'absorption de lumière à bande étroite et une structure de conversion photoélectrique ayant une large plage de longueurs d'onde sont directement intégrées, et la capacité de détection optique de haute précision portable est mise en œuvre au moyen d'un mode de sortie d'un photocourant.
(ZH)
一种电读出光学传感器,包括背金属电极层(4)、半导体层(1)、金属或类金属层(2);所述半导体层(1)为主体部分,分为第一表面和第二表面;所述第一表面设置有凹槽结构,形成光栅(3);所述背金属电极层(4)覆盖于半导体层(1)第二表面;所述金属或类金属层(2)覆盖于半导体层(1)第一表面,组成光电管,用于宽波长范围高线性度光电流信号的产生;构建窄带光吸收的光学传感结构与宽波长范围光电转换结构的直接集成,通过光电流的输出方式来实现便携式高精度的光学传感能力。
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