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1. WO2020062385 - FLEXIBLE SUBSTRATE FILM BULK ACOUSTIC RESONATOR AND FORMING METHOD THEREFOR

Publication Number WO/2020/062385
Publication Date 02.04.2020
International Application No. PCT/CN2018/112092
International Filing Date 26.10.2018
IPC
H03H 9/02 2006.01
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
9Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
02Details
CPC
H03H 2003/023
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
3Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
007for the manufacture of electromechanical resonators or networks
02for the manufacture of piezo-electric or electrostrictive resonators or networks
023the resonators or networks being of the membrane type
H03H 3/02
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
3Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
007for the manufacture of electromechanical resonators or networks
02for the manufacture of piezo-electric or electrostrictive resonators or networks
H03H 9/02047
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
9Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
02Details
02007of bulk acoustic wave devices
02047Treatment of substrates
H03H 9/0504
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
9Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
02Details
05Holders; Supports
0504for bulk acoustic wave devices
H03H 9/131
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
9Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
02Details
125Driving means, e.g. electrodes, coils
13for networks consisting of piezo-electric or electrostrictive materials
131consisting of a multilayered structure
H03H 9/171
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
9Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
15Constructional features of resonators consisting of piezo-electric or electrostrictive material
17having a single resonator
171implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
Applicants
  • 天津大学 TIANJIN UNIVERSITY [CN]/[CN]
Inventors
  • 刘伯华 LIU, Bohua
  • 张孟伦 ZHANG, Menglun
  • 杨清瑞 YANG, Qingrui
  • 庞慰 PANG, Wei
Agents
  • 北京汉智嘉成知识产权代理有限公司 CHINA SMART INTELLECTUAL PROPERTY LTD.
Priority Data
201811154754.730.09.2018CN
Publication Language Chinese (ZH)
Filing Language Chinese (ZH)
Designated States
Title
(EN) FLEXIBLE SUBSTRATE FILM BULK ACOUSTIC RESONATOR AND FORMING METHOD THEREFOR
(FR) RÉSONATEUR À ONDES ACOUSTIQUES DE VOLUME À FILM DE SUBSTRAT FLEXIBLE ET SON PROCÉDÉ DE FORMATION
(ZH) 一种柔性基底薄膜体声波谐振器以及形成方法
Abstract
(EN)
Provided are a flexible substrate film bulk acoustic resonator (200, 300, 400, 500, 700, 800) and a forming method therefor, which is helpful to increase the Q value of the device and improve the performance of the device, and can reduce the cost for processing and manufacturing the device. The flexible substrate film bulk acoustic resonator (200, 300, 400, 500, 700, 800) comprises: a flexible substrate (215, 311, 409, 511, 615, 721, 815), a bottom acoustic reflection layer, and a resonant structure, wherein the bottom acoustic reflection layer is located above the flexible substrate (215, 311, 409, 511, 615, 721, 815), and the resonant structure is located above the bottom acoustic reflection layer.
(FR)
L'invention concerne un résonateur à ondes acoustiques de volume à film de substrat souple (200, 300, 400, 500, 800) et son procédé de formation, qui est utile pour augmenter la valeur Q du dispositif et améliorer les performances du dispositif, et peut réduire le coût de traitement et de fabrication du dispositif. Le résonateur à ondes acoustiques de volume à film de substrat flexible (200, 300, 400, 500, 700, 800) comprend : un substrat flexible (215, 311, 409, 511, 615 721, 815), une couche de réflexion acoustique inférieure et une structure résonante, la couche de réflexion acoustique inférieure étant située au-dessus du substrat flexible (215, 311, 409, 511, 615, 721, 815), et la structure résonante étant située au-dessus de la couche de réflexion acoustique inférieure.
(ZH)
一种柔性基底薄膜体声波谐振器(200,300,400,500,700,800)以及形成方法,有助于提高器件的Q值,改善器件性能,并能降低器件加工制作的成本。该柔性基底薄膜体声波谐振器(200,300,400,500,700,800)包括:柔性基底(215,311,409,511,615,721,815)、底部声反射层、以及谐振结构,其中:底部声反射层位于柔性基底(215,311,409,511,615,721,815)之上;谐振结构位于底部声反射层之上。
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