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1. WO2020062384 - FLEXIBLE SUBSTRATE FILM BULK ACOUSTIC RESONATOR AND FORMING METHOD THEREFOR

Publication Number WO/2020/062384
Publication Date 02.04.2020
International Application No. PCT/CN2018/112083
International Filing Date 26.10.2018
IPC
H03H 9/02 2006.01
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
9Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
02Details
H03H 3/02 2006.01
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
3Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
007for the manufacture of electromechanical resonators or networks
02for the manufacture of piezo-electric or electrostrictive resonators or networks
H03H 3/007 2006.01
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
3Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
007for the manufacture of electromechanical resonators or networks
CPC
H03H 2003/023
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
3Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
007for the manufacture of electromechanical resonators or networks
02for the manufacture of piezo-electric or electrostrictive resonators or networks
023the resonators or networks being of the membrane type
H03H 2003/027
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
3Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
007for the manufacture of electromechanical resonators or networks
02for the manufacture of piezo-electric or electrostrictive resonators or networks
027the resonators or networks being of the microelectro-mechanical [MEMS] type
H03H 2009/02173
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
9Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
02Details
02165Tuning
02173of film bulk acoustic resonators [FBAR]
H03H 3/0072
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
3Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
007for the manufacture of electromechanical resonators or networks
0072of microelectro-mechanical resonators or networks
H03H 3/02
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
3Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
007for the manufacture of electromechanical resonators or networks
02for the manufacture of piezo-electric or electrostrictive resonators or networks
H03H 9/02
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
9Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
02Details
Applicants
  • 天津大学 TIANJIN UNIVERSITY [CN]/[CN]
Inventors
  • 刘伯华 LIU, Bohua
  • 张孟伦 ZHANG, Menglun
  • 庞慰 PANG, Wei
  • 杨清瑞 YANG, Qingrui
Agents
  • 北京汉智嘉成知识产权代理有限公司 CHINA SMART INTELLECTUAL PROPERTY LTD.
Priority Data
201811154828.730.09.2018CN
Publication Language Chinese (ZH)
Filing Language Chinese (ZH)
Designated States
Title
(EN) FLEXIBLE SUBSTRATE FILM BULK ACOUSTIC RESONATOR AND FORMING METHOD THEREFOR
(FR) RÉSONATEUR ACOUSTIQUE DE VOLUME À FILM DE SUBSTRAT FLEXIBLE ET SON PROCÉDÉ DE FORMATION
(ZH) 柔性基底薄膜体声波谐振器及其形成方法
Abstract
(EN)
A flexible substrate film bulk acoustic resonator and a forming method therefor conducive to raising the Q value of the resonator and improving the performance of the resonator. The forming method for the flexible substrate film bulk acoustic resonator comprises: a sacrificial layer (1101) is provided; a resonating structure (214) is formed on the sacrificial layer (1101); an upper acoustic reflection structure (210) is formed on the resonating structure (214); the sacrificial layer (1101) is removed, thereby obtaining a stacked structure, and then the stacked structure is transferred onto a flexible substrate (219) by means of a flipping process, the stacked structure comprising the resonating structure (214) and the upper acoustic reflection structure (210); and an encapsulating layer (201) is formed on the upper acoustic reflection structure (210).
(FR)
L'invention concerne un résonateur acoustique de volume à film de substrat flexible et son procédé de formation, permettant d'augmenter la valeur Q du résonateur et d'améliorer les performances du résonateur. Le procédé de formation du résonateur acoustique de volume à film de substrat flexible comprend les étapes suivantes : une couche sacrificielle (1101) est fournie; une structure résonante (214) est formée sur la couche sacrificielle (1101); une structure de réflexion acoustique supérieure (210) est formée sur la structure résonante (214); la couche sacrificielle (1101) est retirée, ce qui permet d'obtenir une structure empilée, puis la structure empilée est transférée sur un substrat flexible (219) au moyen d'un processus de retournement, la structure empilée comprenant la structure résonante (214) et la structure de réflexion acoustique supérieure (210); et une couche d'encapsulation (201) est formée sur la structure de réflexion acoustique supérieure (210).
(ZH)
一种柔性基底薄膜体声波谐振器及其形成方法,有助于提高器件的Q值,改善器件性能。其中,柔性基底薄膜体声波谐振器的形成方法,包括:提供牺牲层(1101);在牺牲层(1101)之上形成谐振结构(214);在谐振结构(214)之上形成顶部声反射结构(210);去除牺牲层(1101),从而得到堆叠结构,然后将堆叠结构通过翻转工艺转移到柔性基底(219)上,堆叠结构包括谐振结构(214)和顶部声反射结构(210);在顶部声反射结构(210)之上形成封装层(201)。
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