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1. WO2020062222 - SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREFOR

Publication Number WO/2020/062222
Publication Date 02.04.2020
International Application No. PCT/CN2018/109052
International Filing Date 30.09.2018
IPC
H01L 21/338 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
334Multistep processes for the manufacture of devices of the unipolar type
335Field-effect transistors
338with a Schottky gate
H01L 29/778 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66Types of semiconductor device
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76Unipolar devices
772Field-effect transistors
778with two-dimensional charge carrier gas channel, e.g. HEMT
CPC
H01L 29/778
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
66Types of semiconductor device ; ; Multistep manufacturing processes therefor
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
76Unipolar devices ; , e.g. field effect transistors
772Field effect transistors
778with two-dimensional charge carrier gas channel, e.g. HEMT ; ; with two-dimensional charge-carrier layer formed at a heterojunction interface
Applicants
  • 苏州晶湛半导体有限公司 ENKRIS SEMICONDUCTOR, INC. [CN]/[CN]
Inventors
  • 程凯 CHENG, Kai
Agents
  • 北京布瑞知识产权代理有限公司 BEIJING BRIGHT IP AGENCY CO., LTD.
Priority Data
Publication Language Chinese (ZH)
Filing Language Chinese (ZH)
Designated States
Title
(EN) SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREFOR
(FR) STRUCTURE SEMI-CONDUCTRICE ET SON PROCÉDÉ DE FABRICATION
(ZH) 一种半导体结构及其制造方法
Abstract
(EN)
A semiconductor structure and a manufacturing method therefor, solving the problem of a prior semiconductor structure having a complicated manufacturing process, poor stability, and poor reliability. The semiconductor structure comprises: a channel layer (23) and a barrier layer (24) sequentially manufactured; a composition changing layer (3) formed on the barrier layer (24), a gate electrode area being defined on the surface of the composition changing layer (3), the materials of the composition changing layer (3) comprising at least one composition changing element; and a p-type semiconductor material (5) provided in the gate electrode area of the composition changing layer (3).
(FR)
La présente invention concerne une structure semi-conductrice et son procédé de fabrication permettant de résoudre le problème d'une structure semi-conductrice antérieure ayant un processus de fabrication compliqué, une mauvaise stabilité et une faible fiabilité. La structure semi-conductrice comprend : une couche de canal (23) et une couche barrière (24) fabriquées séquentiellement ; une couche de changement de composition (3) formée sur la couche barrière (24), une zone d'électrode de grille étant définie sur la surface de la couche changeant de composition (3), les matériaux de la couche changeant de composition (3) comprenant au moins un élément de changement de composition ; et un matériau semi-conducteur de type p (5) disposé dans la zone d'électrode de grille de la couche changeant de composition (3).
(ZH)
一种半导体结构及其制造方法,解决了现有半导体结构的制造工艺复杂以及稳定性差和可靠性差的问题。其中的半导体结构包括:依次制备的沟道层(23)以及势垒层(24);形成于所述势垒层(24)上的成分变化层(3),所述成分变化层(3)的表面上定义有栅极区域,所述成分变化层(3)的材料包括至少一种成分变化元素;以及形成于所述成分变化层(3)的所述栅极区域的p型半导体材料(5)。
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