Processing

Please wait...

Settings

Settings

1. WO2020009281 - HYBRID METHOD FOR ACTIVATING IMPURITY

Publication Number WO/2020/009281
Publication Date 09.01.2020
International Application No. PCT/KR2018/013140
International Filing Date 31.10.2018
IPC
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30
Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
324
Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
26
Bombardment with wave or particle radiation
263
with high-energy radiation
268
using electromagnetic radiation, e.g. laser radiation
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
22
Diffusion of impurity materials, e.g. doping materials, electrode materials, into, or out of, a semiconductor body, or between semiconductor regions; Redistribution of impurity materials, e.g. without introduction or removal of further dopant
H01L 21/324 (2006.01)
H01L 21/268 (2006.01)
H01L 21/22 (2006.01)
CPC
H01L 21/22
H01L 21/268
H01L 21/324
Applicants
  • 고려대학교 산학협력단 KOREA UNIVERSITY RESEARCH AND BUSINESS FOUNDATION [KR/KR]; 서울시 성북구 안암로 145 (안암동5가) (Anam-dong 5-ga) 145 Anam-ro, Seongbuk-gu, Seoul 02841, KR
Inventors
  • 유현용 YU, Hyun-Yong; KR
  • 김승근 KIM, Seung-Geun; KR
Agents
  • 김홍석 KIM, Hong Suk; KR
Priority Data
10-2018-007887906.07.2018KR
Publication Language Korean (KO)
Filing Language Korean (KO)
Designated States
Title
(EN) HYBRID METHOD FOR ACTIVATING IMPURITY
(FR) PROCÉDÉ HYBRIDE D'ACTIVATION D'IMPURETÉS
(KO) 하이브리드 불순물 활성화 방법
Abstract
(EN)
Disclosed is a method for activating an impurity in a semiconductor device. The method for activating an impurity comprises the steps of: (a) injecting an impurity to a semiconductor substrate; (b) performing a first activation of the impurity by heat treating the semiconductor substrate at 500 ℃ to 550 ℃; and (c) performing a second activation of the impurity by irradiating, with a visible light laser, the surface of the semiconductor substrate to which the impurity is injected.
(FR)
La présente invention concerne un procédé d'activation d'une impureté dans un dispositif à semi-conducteur. Le procédé d'activation d'une impureté comprend les étapes consistant à : (a) injecter une impureté sur un substrat semi-conducteur ; (b) effectuer une première activation de l'impureté par traitement thermique du substrat semi-conducteur à une température de 500 °C à 550 °C ; et (c) effectuer une seconde activation de l'impureté par irradiation, avec un laser à lumière visible, de la surface du substrat semi-conducteur sur lequel est injectée l'impureté.
(KO)
반도체 소자에서의 불순물 활성화 방법이 개시된다. 상기 불순물 활성화 방법은 (a) 반도체 기판에 불순물을 주입하는 단계, (b) 상기 반도체 기판을 500℃ 내지 550℃에서 열처리하여 상기 불순물을 제1차 활성화하는 단계, 및 (c) 상기 불순물이 주입된 반도체 기판의 표면에 가시광 레이저를 조사하여 상기 불순물을 제2차 활성화하는 단계를 포함한다.
Latest bibliographic data on file with the International Bureau