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1. WO2020008955 - SUBSTRATE PROCESSING DEVICE AND SUBSTRATE PROCESSING METHOD

Publication Number WO/2020/008955
Publication Date 09.01.2020
International Application No. PCT/JP2019/025160
International Filing Date 25.06.2019
IPC
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
027
Making masks on semiconductor bodies for further photolithographic processing, not provided for in group H01L21/18 or H01L21/34165
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30
Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302
to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30
Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302
to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
306
Chemical or electrical treatment, e.g. electrolytic etching
3065
Plasma etching; Reactive-ion etching
H01L 21/02 (2006.01)
H01L 21/027 (2006.01)
H01L 21/302 (2006.01)
H01L 21/3065 (2006.01)
CPC
H01L 21/02
H01L 21/027
H01L 21/302
H01L 21/3065
Applicants
  • 東京エレクトロン株式会社 TOKYO ELECTRON LIMITED [JP/JP]; 東京都港区赤坂五丁目3番1号 3-1, Akasaka 5-chome, Minato-ku, Tokyo 1076325, JP
Inventors
  • 中込 渉 NAKAGOMI, Wataru; JP
  • 向山 達也 MUKOYAMA, Tatsuya; JP
  • 風間 和典 KAZAMA, Kazunori; JP
  • 窪田 茂 KUBOTA, Shigeru; JP
  • 一瀬 翔 ICHINOSE, Sho; JP
  • 千頭和 淳也 CHIZUWA, Junya; JP
  • 小宮山 秋人 KOMIYAMA, Akihito; JP
  • 東村 竜平 HIGASHIMURA, Ryuhei; JP
Agents
  • 金本 哲男 KANEMOTO, Tetsuo; JP
  • 萩原 康司 HAGIWARA, Yasushi; JP
  • 扇田 尚紀 OGITA, Naoki; JP
  • 三根 卓也 MINE, Takuya; JP
Priority Data
2018-12818605.07.2018JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) SUBSTRATE PROCESSING DEVICE AND SUBSTRATE PROCESSING METHOD
(FR) DISPOSITIF ET PROCÉDÉ DE TRAITEMENT DE SUBSTRAT
(JA) 基板処理装置及び基板処理方法
Abstract
(EN)
This substrate processing device for processing a substrate, has a plurality of processing modules that each perform a predetermined process on a substrate, and an information display unit that displays information about an error having occurred in the predetermined process. The information display unit displays, in the same screen, the substrate on which the predetermined process has been performed in which the error occurred, the processing module that has performed the predetermined process in which the error occurred, the time when the error occurred, and the main cause of the error.
(FR)
Le présent dispositif de traitement de substrat permettant de traiter un substrat comprend une pluralité de modules de traitement qui appliquent individuellement un traitement prédéfini à un substrat, et une unité d'affichage d'informations qui affiche des informations concernant une erreur qui s'est produite pendant le traitement prédéfini. L'unité d'affichage d'informations affiche, sur le même écran, le substrat auquel a été appliqué le traitement prédéfini pendant lequel s'est produit l'erreur, le module de traitement qui a appliqué le traitement prédéfini pendant lequel s'est produit l'erreur, le moment où l'erreur s'est produite, et la cause principale de l'erreur.
(JA)
基板を処理する基板処理装置であって、基板に所定の処理を行う複数の処理モジュールと、前記所定の処理において生じたエラーに関する情報を表示する情報表示部と、を有し、前記情報表示部は、前記エラーが発生した所定の処理が行われていた基板と、前記エラーが発生した所定の処理を行っていた処理モジュールと、前記エラーが発生したタイミングと、前記エラーの要因と、を同一画面内に表示する。
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