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1. WO2020008954 - SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS

Publication Number WO/2020/008954
Publication Date 09.01.2020
International Application No. PCT/JP2019/025154
International Filing Date 25.06.2019
IPC
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30
Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302
to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67
Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67
Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
677
for conveying, e.g. between different work stations
H01L 21/302 (2006.01)
H01L 21/02 (2006.01)
H01L 21/67 (2006.01)
H01L 21/677 (2006.01)
CPC
H01L 21/02
H01L 21/302
H01L 21/67
H01L 21/677
Applicants
  • 東京エレクトロン株式会社 TOKYO ELECTRON LIMITED [JP/JP]; 東京都港区赤坂五丁目3番1号 3-1, Akasaka 5-chome, Minato-ku, Tokyo 1076325, JP
Inventors
  • 中込 渉 NAKAGOMI, Wataru; JP
  • 向山 達也 MUKOYAMA, Tatsuya; JP
  • 窪田 茂 KUBOTA, Shigeru; JP
Agents
  • 金本 哲男 KANEMOTO, Tetsuo; JP
  • 萩原 康司 HAGIWARA, Yasushi; JP
  • 扇田 尚紀 OGITA, Naoki; JP
  • 三根 卓也 MINE, Takuya; JP
Priority Data
2018-12773004.07.2018JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS
(FR) PROCÉDÉ DE TRAITEMENT DE SUBSTRAT ET APPAREIL DE TRAITEMENT DE SUBSTRAT
(JA) 基板処理方法及び基板処理装置
Abstract
(EN)
A substrate processing method which processes a substrate with use of a substrate processing apparatus that comprises a COR module for performing a COR treatment on the substrate, a heating module for performing a heat treatment on the substrate, and a cooling module for performing a cooling treatment on the substrate, and which comprises: a COR treatment step for performing a COR treatment on the substrate in a reduced pressure atmosphere by means of the COR module; a subsequent heat treatment step for carrying the substrate to the heating module and performing a heat treatment on the substrate in a reduced pressure atmosphere by means of the heating module; and a subsequent cooling step for carrying the substrate to the cooling module and performing a cooling treatment on the substrate in the atmosphere by means of the cooling module. With respect to this substrate processing method, a treatment cycle which comprises the COR treatment, the heat treatment and the cooling treatment is repeatedly performed on one same substrate.
(FR)
L'invention concerne un procédé de traitement de substrat qui traite un substrat à l'aide d'un appareil de traitement de substrat qui comprend un module COR pour effectuer un traitement COR sur le substrat, un module de chauffage pour effectuer un traitement thermique sur le substrat, et un module de refroidissement pour effectuer un traitement de refroidissement sur le substrat, et qui comprend : une étape de traitement COR pour effectuer un traitement COR sur le substrat dans une atmosphère à pression réduite au moyen du module COR ; une étape de traitement thermique ultérieure consistant à porter le substrat au module de chauffage et à effectuer un traitement thermique sur le substrat dans une atmosphère à pression réduite au moyen du module de chauffage ; et une étape de refroidissement ultérieure pour porter le substrat vers le module de refroidissement et effectuer un traitement de refroidissement sur le substrat dans l'atmosphère au moyen du module de refroidissement. Par rapport à ce procédé de traitement de substrat, un cycle de traitement qui comprend le traitement COR, le traitement thermique et le traitement de refroidissement est réalisé de façon répétée sur un même substrat.
(JA)
基板処理装置を用いて基板を処理する基板処理方法であって、前記基板処理装置は、基板にCOR処理を行うCORモジュールと、基板に加熱処理を行う加熱モジュールと、基板に冷却処理を行う冷却モジュールと、を有し、前記基板処理方法は、前記CORモジュールにおいて減圧雰囲気下で基板にCOR処理を行うCOR処理工程と、その後、前記加熱モジュールに基板を搬送し、当該加熱モジュールにおいて減圧雰囲気下で基板を加熱処理する加熱処理工程と、その後、前記冷却モジュールに基板を搬送し、当該冷却モジュールにおいて大気雰囲気下で基板を冷却処理する冷却処理工程と、を有し、同一の基板に対して前記COR処理工程、前記加熱処理工程及び前記冷却処理工程を含む処理サイクルを繰り返し行う。
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