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1. WO2020008721 - SEMICONDUCTOR DEVICE

Publication Number WO/2020/008721
Publication Date 09.01.2020
International Application No. PCT/JP2019/018394
International Filing Date 08.05.2019
IPC
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70
Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof
77
Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
78
with subsequent division of the substrate into plural individual devices
82
to produce devices, e.g. integrated circuits, each consisting of a plurality of components
822
the substrate being a semiconductor, using silicon technology
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27
Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02
including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04
the substrate being a semiconductor body
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27
Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02
including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04
the substrate being a semiconductor body
06
including a plurality of individual components in a non-repetitive configuration
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66
Types of semiconductor device
86
controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated, or switched
861
Diodes
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66
Types of semiconductor device
86
controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated, or switched
861
Diodes
868
PIN diodes
H01L 21/822 (2006.01)
H01L 27/04 (2006.01)
H01L 27/06 (2006.01)
H01L 29/861 (2006.01)
H01L 29/868 (2006.01)
CPC
H01L 21/822
H01L 27/04
H01L 27/06
H01L 29/861
H01L 29/868
Applicants
  • 株式会社デンソー DENSO CORPORATION [JP/JP]; 愛知県刈谷市昭和町1丁目1番地 1-1, Showa-cho, Kariya-city, Aichi 4488661, JP
Inventors
  • 原田 峻丞 HARADA, Shunsuke; JP
  • 野村 貴志 NOMURA, Takashi; JP
Agents
  • 特許業務法人 サトー国際特許事務所 SATO INTERNATIONAL PATENT FIRM; JP
Priority Data
2018-12756304.07.2018JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) SEMICONDUCTOR DEVICE
(FR) DISPOSITIF SEMI-CONDUCTEUR
(JA) 半導体装置
Abstract
(EN)
A semiconductor device (1) according to an embodiment of the present invention comprises a semiconductor substrate (10), insulation films (12, 14, 60a, 64, 68) provided on the semiconductor substrate, a temperature detection element (20) provided on the insulation films, and capacitive elements (22, 24, 26, 28, 55) provided on the anode side or the cathode side of the temperature detection element, the sum of capacitive values (Ca, Cacap, Ck, Ckcap) of the capacitive elements being greater than the capacitive value (Cdi) of the temperature detection element.
(FR)
Selon un mode de réalisation, la présente invention concerne un dispositif semi-conducteur (1) qui comprend un substrat semi-conducteur (10), des pellicules d’isolation (12, 14, 60a, 64, 68) disposées sur le substrat semi-conducteur, un élément de détection de température (20) disposé sur les pellicules d’isolation, et des éléments capacitifs (22, 24, 26, 28, 55) disposés du côté de l’anode ou du côté de la cathode de l’élément de détection de température, la somme des valeurs capacitives (Ca, Cacap, Ck, Ckcap) des éléments capacitifs étant supérieure à la valeur capacitive (Cdi) de l’élément de détection de température.
(JA)
実施形態に係る半導体装置(1)は、半導体基板(10)と、前記半導体基板に設けられた絶縁膜(12、14、60a、64、68)と、前記絶縁膜上に設けられた温度検出素子(20)と、前記温度検出素子のアノード側、又はカソード側に設けられた容量素子(22,24、26、28、55)と、を備え、前記容量素子の容量値(Ca、Cacap、Ck、Ckcap)の和は、前記温度検出素子の容量値(Cdi)よりも大きい。
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