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1. WO2020008294 - METHOD FOR PRODUCING METAL OXYNITRIDE FILM

Publication Number WO/2020/008294
Publication Date 09.01.2020
International Application No. PCT/IB2019/055287
International Filing Date 24.06.2019
IPC
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
34
the devices having semiconductor bodies not provided for in groups H01L21/06, H01L21/16, and H01L21/18159
36
Deposition of semiconductor materials on a substrate, e.g. epitaxial growth
363
using physical deposition, e.g. vacuum deposition, sputtering
C CHEMISTRY; METALLURGY
23
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
C
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14
Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
06
characterised by the coating material
C CHEMISTRY; METALLURGY
23
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
C
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14
Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
06
characterised by the coating material
08
Oxides
C CHEMISTRY; METALLURGY
23
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
C
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14
Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
22
characterised by the process of coating
34
Sputtering
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66
Types of semiconductor device
68
controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76
Unipolar devices
772
Field-effect transistors
78
with field effect produced by an insulated gate
786
Thin-film transistors
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02
characterised by the semiconductor bodies
16
with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
H01L 21/363 (2006.01)
C23C 14/06 (2006.01)
C23C 14/08 (2006.01)
C23C 14/34 (2006.01)
H01L 29/786 (2006.01)
H01L 33/16 (2010.01)
CPC
C23C 14/06
C23C 14/08
C23C 14/34
H01L 29/786
H01L 33/16
Applicants
  • 株式会社半導体エネルギー研究所 SEMICONDUCTOR ENERGY LABORATORY CO., LTD. [JP/JP]; 神奈川県厚木市長谷398 398, Hase, Atsugi-shi, Kanagawa 2430036, JP
Inventors
  • 種村和幸 TANEMURA, Kazuki; JP
  • 三本菅正太 SAMBONSUGE, Shota; --
  • 奥野直樹 OKUNO, Naoki; JP
Priority Data
2018-12896406.07.2018JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) METHOD FOR PRODUCING METAL OXYNITRIDE FILM
(FR) PROCÉDÉ DE PRODUCTION DE FILM D'OXYNITRURE MÉTALLIQUE
(JA) 金属酸窒化物膜の作製方法
Abstract
(EN)
Provided is a method by which a metal oxynitride film is formed by low-temperature epitaxial growth. The method for producing a metal oxynitride film comprises introducing one or more gases comprising nitrogen gas into the space over a single-crystal substrate and using an oxide target to cause epitaxial growth by sputtering. The oxide target contains zinc, the substrate during the deposition of the metal oxynitride film has a temperature of 80-400°C, and the flow rate of the nitrogen gas is 50-100% of the overall flow rate of all the gases.
(FR)
L'invention concerne un procédé par lequel un film d'oxynitrure métallique est formé par croissance épitaxiale à basse température. Le procédé de production d'un film d'oxynitrure métallique consiste à introduire un ou plusieurs gaz comprenant un gaz d'azote dans l'espace sur un substrat monocristallin et à utiliser une cible d'oxyde pour provoquer une croissance épitaxiale par pulvérisation. La cible d'oxyde contient du zinc, le substrat pendant le dépôt du film d'oxynitrure métallique est à une température de 80 à 400 °C, et le débit du gaz d'azote s'inscrit dans une plage de 50 à 100 % du débit global de tous les gaz.
(JA)
要約書 金属酸窒化物膜を低温でエピタキシャル成長させて成膜する方法を提供する。 単結晶の基板上に、 窒素ガスを含む気体を導入して、 酸化物ターゲットを用いて、 スパッタリング法 によって、 エピタキシャル成長させる金属酸窒化物膜の作製方法であって、 酸化物ターゲットは、 亜 鉛を含み、金属酸窒化物膜の成膜中の基板は、80℃以上400℃以下であり、窒素ガスの流量は、 気体の全流量中の50%以上100%以下である。
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