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1. WO2020008116 - SUBSTRATE FOR AN INTEGRATED RADIOFREQUENCY DEVICE, AND PROCESS FOR MANUFACTURING SAME

Publication Number WO/2020/008116
Publication Date 09.01.2020
International Application No. PCT/FR2018/051683
International Filing Date 05.07.2018
IPC
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70
Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof
71
Manufacture of specific parts of devices defined in group H01L21/7086
76
Making of isolation regions between components
762
Dielectric regions
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30
Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
322
to modify their internal properties, e.g. to produce internal imperfections
H01L 21/762 (2006.01)
H01L 21/322 (2006.01)
CPC
H01L 21/3226
H01L 21/76254
H01L 21/76256
Applicants
  • SOITEC [FR/FR]; Parc Technologique des Fontaines Chemin des Franques 38190 BERNIN, FR
Inventors
  • VEYTIZOU, Christelle; FR
  • REYNAUD, Patrick; FR
  • KONONCHUK, Oleg; FR
  • ALLIBERT, Frédéric; FR
Agents
  • BREESE, Pierre; FR
Priority Data
Publication Language French (FR)
Filing Language French (FR)
Designated States
Title
(EN) SUBSTRATE FOR AN INTEGRATED RADIOFREQUENCY DEVICE, AND PROCESS FOR MANUFACTURING SAME
(FR) SUBSTRAT POUR UN DISPOSITIF INTEGRE RADIOAFREQUENCE ET SON PROCEDE DE FABRICATION
Abstract
(EN)
The invention relates to a substrate (1) for applications in the fields of electronics and radiofrequency microelectronics, comprising a base substrate (3); a single carbon layer (2) that is disposed on and in direct contact with the base substrate (3), the carbon layer (2) having a thickness strictly between 1 nm and 5 nm; an electrically insulating layer (4) disposed on the carbon layer (2); and a layer (5) of devices disposed on the insulating layer (4). The invention also relates to a process for manufacturing said substrate.
(FR)
L'invention porte sur un substrat (1) pour des applications dans les domaines de l'électronique et de la microélectronique radiofréquence comprenant un substrat de base (3); une unique couche de carbone (2) disposée sur et directement en contact avec le substrat de base (3), la couche de carbone (2) présentant une épaisseur strictement comprise entre lnm et 5nm; une couche d' isolant électrique (4) disposée sur la couche de carbone (2); une couche de dispositifs (5) disposée sur la couche d'isolant (4). L' invention porte également sur un procédé de fabrication de ce substrat.
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