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1. WO2020007960 - ELECTRONIC DEVICE AND METHOD OF PRODUCING SAME

Publication Number WO/2020/007960
Publication Date 09.01.2020
International Application No. PCT/EP2019/067944
International Filing Date 04.07.2019
IPC
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
25
Assemblies consisting of a plurality of individual semiconductor or other solid state devices
03
all the devices being of a type provided for in the same subgroup of groups H01L27/-H01L51/128
04
the devices not having separate containers
065
the devices being of a type provided for in group H01L27/78
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
25
Assemblies consisting of a plurality of individual semiconductor or other solid state devices
H01L 25/065 (2006.01)
H01L 25/00 (2006.01)
CPC
H01L 2225/06575
H01L 25/0657
H01L 25/50
Applicants
  • COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES [FR/FR]; 25 rue Leblanc Bâtiment "Le Ponant D" 75015 Paris, FR
Inventors
  • BRUN, Jean; FR
Agents
  • TALBOT, Alexandre; FR
Priority Data
185617104.07.2018FR
Publication Language French (FR)
Filing Language French (FR)
Designated States
Title
(EN) ELECTRONIC DEVICE AND METHOD OF PRODUCING SAME
(FR) DISPOSITIF ELECTRONIQUE ET SON PROCEDE DE REALISATION
Abstract
(EN)
A method for producing a device comprises the following successive steps: - providing a first substrate (1) made of (100), (110) or (111) silicon, a type III-IV compound or a type II-VI compound, provided with at least one protruding metallic stud (2), and providing a second substrate (3); - securing the first substrate (1) to the second substrate (3), the at least one metallic stud (2) forming a blocking means which stops a movement beyond a threshold position; - annealing the metallic stud (2) in order to melt said metallic stud (2) and eliminate the blocking means.
(FR)
Le procédé de fabrication d'un dispositif comporte les étapes successives suivantes: - fournir un premier substrat (1) en silicium d'orientation (100), (110) ou (111) en matériau de type III-IV ou en matériau de type II-VI, muni d'au moins un plot métallique (2) en saillie et fournir un deuxième substrat (3); - fixer le premier substrat (1) avec le deuxième substrat (3), le au moins un plot métallique (2) formant un moyen de blocage qui interdit un déplacement au-delà d'une position seuil; - réaliser un recuit du plot métallique (2) de manière à fondre le plot métallique (2) et supprimer le moyen de blocage.
Latest bibliographic data on file with the International Bureau