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1. WO2020006772 - GALLIUM NITRIDE SINGLE CRYSTAL MATERIAL AND PREPARATION METHOD THEREFOR

Publication Number WO/2020/006772
Publication Date 09.01.2020
International Application No. PCT/CN2018/094957
International Filing Date 09.07.2018
IPC
C CHEMISTRY; METALLURGY
30
CRYSTAL GROWTH
B
SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
29
Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
10
Inorganic compounds or compositions
38
Nitrides
C CHEMISTRY; METALLURGY
30
CRYSTAL GROWTH
B
SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
25
Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth
02
Epitaxial-layer growth
18
characterised by the substrate
20
the substrate being of the same materials as the epitaxial layer
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
20
Deposition of semiconductor materials on a substrate, e.g. epitaxial growth
C30B 29/38 (2006.01)
C30B 25/20 (2006.01)
H01L 21/20 (2006.01)
CPC
C30B 25/20
C30B 29/38
H01L 21/20
Applicants
  • 中国科学院福建物质结构研究所 FUJIAN INSTITUTE OF RESEARCH ON THE STRUCTURE OF MATTER, CHINESE ACADEMY OF SCIENCES [CN/CN]; 中国福建省福州市 鼓楼区杨桥西路155号 155 Yangqiao Road West, Gulou District Fuzhou, Fujian 350002, CN
Inventors
  • 谢奎 XIE, Kui; CN
  • 席少波 XI, Shaobo; CN
  • 胡秀丽 HU, Xiuli; CN
Agents
  • 北京元周律知识产权代理有限公司 PERIODIC LAW FIRM; 中国北京市 西城区德胜门外大街36号德胜凯旋大厦B座1713室 B-1713 Deshengkaixuan Building, NO. 36 Deshengmenwai Street, Xicheng District Beijing 100120, CN
Priority Data
201810717305.203.07.2018CN
Publication Language Chinese (ZH)
Filing Language Chinese (ZH)
Designated States
Title
(EN) GALLIUM NITRIDE SINGLE CRYSTAL MATERIAL AND PREPARATION METHOD THEREFOR
(FR) MATÉRIAU MONOCRISTALLIN DE NITRURE DE GALLIUM ET PROCÉDÉ DE PRÉPARATION ASSOCIÉ
(ZH) 一种氮化镓单晶材料及其制备方法
Abstract
(EN)
Disclosed in the present application is a high-quality gallium nitride polar (0001) C-plane and non-polar (1010) M-plane and (1120) A-plane single crystal material, which solves the problems of heterogeneous growth of gallium nitride single crystal material and improving the performance of gallium nitride device in the prior art, thereby improving the quality of the gallium nitride single crystal material. The gallium nitride single crystal material comprises a porous gallium nitride single crystal or a porous gallium nitride single crystal thin film A; and a gallium nitride single crystal thin film B. The gallium nitride single crystal thin film B is grown on the porous gallium nitride single crystal or porous gallium nitride single crystal thin film A.
(FR)
La présente invention concerne un matériau monocristallin de nitrure de gallium de haute qualité à (0001) plan C polaire et (1010) plan M et (1120) plan A non polaires, qui résout les problèmes de croissance hétérogène de matériau monocristallin de nitrure de gallium et améliore la performance du dispositif de nitrure de gallium de l'état de la technique, ce qui permet d'améliorer la qualité du matériau monocristallin de nitrure de gallium. Le matériau monocristallin de nitrure de gallium comprend un monocristal de nitrure de gallium poreux ou un film mince monocristallin de nitrure de gallium poreux A ; et un film mince de monocristal de nitrure de gallium B. Le film mince monocristallin de nitrure de gallium B croît sur le monocristal de nitrure de gallium poreux ou le film mince monocristallin de nitrure de gallium poreux A.
(ZH)
本申请公开了一种高质量氮化镓极性(0001)C面、非极性(I)M面和(II)A面单晶材料,以解决现有技术中氮化镓单晶材料异质生长和提高氮化镓器件性能的问题,大幅提高了氮化镓单晶材料的品质。所述氮化镓单晶材料包括A多孔氮化镓单晶晶体或多孔氮化镓单晶薄膜;和B氮化镓单晶薄膜;其中,所述B氮化镓单晶薄膜生长于所述A多孔氮化镓单晶晶体或多孔氮化镓单晶薄膜上。
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