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1. WO2020006532 - ZINCATING AND DOPING OF METAL LINER FOR LINER PASSIVATION AND ADHESION IMPROVEMENT

Publication Number WO/2020/006532
Publication Date 02.01.2020
International Application No. PCT/US2019/040014
International Filing Date 28.06.2019
IPC
C CHEMISTRY; METALLURGY
23
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
C
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16
Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes
56
After-treatment
C CHEMISTRY; METALLURGY
23
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
C
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16
Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes
22
characterised by the deposition of inorganic material, other than metallic material
30
Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
40
Oxides
C CHEMISTRY; METALLURGY
23
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
C
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16
Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes
44
characterised by the method of coating
455
characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C CHEMISTRY; METALLURGY
23
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
C
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16
Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes
04
Coating on selected surface areas, e.g. using masks
C CHEMISTRY; METALLURGY
23
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
C
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
10
Solid state diffusion of only metal elements or silicon into metallic material surfaces
28
using solids, e.g. powders, pastes
C CHEMISTRY; METALLURGY
23
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
C
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
18
Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
16
by reduction or substitution, i.e. electroless plating
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70
Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof
71
Manufacture of specific parts of devices defined in group H01L21/7086
768
Applying interconnections to be used for carrying current between separate components within a device
C23C 16/56 (2006.01)
C23C 16/40 (2006.01)
C23C 16/455 (2006.01)
C23C 16/04 (2006.01)
C23C 10/28 (2006.01)
C23C 18/16 (2006.01)
CPC
C23C 10/02
C23C 10/28
C23C 10/60
C23C 16/04
C23C 16/40
C23C 16/455
Applicants
  • LAM RESEARCH CORPORATION [US/US]; 4650 Cushing Parkway Fremont, CA 94538, US
Inventors
  • JOI, Aniruddha; US
  • DICTUS, Dries; US
  • DORDI, Yezdi; US
Agents
  • LEE, David F.; US
  • LEE, David, F.; US
Priority Data
62/692,66630.06.2018US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) ZINCATING AND DOPING OF METAL LINER FOR LINER PASSIVATION AND ADHESION IMPROVEMENT
(FR) ZINGAGE ET DOPAGE D'UNE DOUBLURE MÉTALLIQUE PERMETTANT UNE AMÉLIORATION DE LA PASSIVATION ET DE L'ADHÉRENCE DE LA DOUBLURE
Abstract
(EN)
A method for forming a self-forming barrier in a feature of a substrate is provided, including the following operations: depositing a metallic liner in the feature of the substrate, the metallic liner being deposited over a dielectric of the substrate; depositing a zinc- containing precursor over the metallic liner; performing a thermal soak of the substrate; repeating the depositing of the zinc-containing precursor and the thermal soak of the substrate for a predefined number of cycles; wherein the method forms a zinc-containing barrier layer at an interface between the metallic liner and the dielectric.
(FR)
L'invention concerne un procédé de formation d'une barrière auto-formée dans un élément d'un substrat. Le procédé comprend les opérations suivantes consistant à : déposer une doublure métallique dans l'élément du substrat, la doublure métallique étant déposée sur un diélectrique du substrat; déposer un précurseur contenant du zinc sur la doublure métallique; effectuer un trempage thermique du substrat; et recommencer le dépôt du précurseur contenant du zinc et le trempage thermique du substrat pendant un nombre prédéfini de cycles. Le procédé forme une couche barrière contenant du zinc au niveau d'une interface entre la doublure métallique et le diélectrique.
Latest bibliographic data on file with the International Bureau