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1. WO2020006313 - OXIDATIVE CONVERSION IN ATOMIC LAYER DEPOSITION PROCESSES

Publication Number WO/2020/006313
Publication Date 02.01.2020
International Application No. PCT/US2019/039621
International Filing Date 27.06.2019
IPC
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30
Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302
to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
306
Chemical or electrical treatment, e.g. electrolytic etching
3065
Plasma etching; Reactive-ion etching
H ELECTRICITY
05
ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
H
PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY- CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
1
Generating plasma; Handling plasma
24
Generating plasma
46
using applied electromagnetic fields, e.g. high frequency or microwave energy
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
J
ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
37
Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
32
Gas-filled discharge tubes
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67
Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
C CHEMISTRY; METALLURGY
23
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
C
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16
Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes
44
characterised by the method of coating
455
characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
H01L 21/02 (2006.01)
H01L 21/3065 (2006.01)
H05H 1/46 (2006.01)
H01J 37/32 (2006.01)
H01L 21/67 (2006.01)
C23C 16/455 (2006.01)
CPC
C23C 16/455
H01J 37/32155
H01L 21/02
H01L 21/3065
Applicants
  • LAM RESEARCH CORPORATION [US/US]; 4650 Cushing Parkway Fremont, California 94538, US
Inventors
  • AGNEW, Douglas Walter; US
  • ABEL, Joseph R.; US
  • VAN SCHRAVENDIJK, Bart Jan; US
Agents
  • SCHEER, Bradley W.; US
  • BLACK, David W., USPTO Reg. No. 42,331; US
  • LANG, Roger, USPTO Reg., No. 58,829; US
  • PERDOK, Monique M., USPTO Reg. No. 42,989; US
Priority Data
62/692,01529.06.2018US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) OXIDATIVE CONVERSION IN ATOMIC LAYER DEPOSITION PROCESSES
(FR) CONVERSION OXYDATIVE DANS DES PROCÉDÉS DE DÉPÔT DE COUCHE ATOMIQUE
Abstract
(EN)
A method for processing a substrate is described. A first reactant in vapor phase is introduced into a reaction chamber having the substrate therein. The first reactant is allowed to be adsorb onto the substrate surface. The non-reactive portion of the first reactant is purged from the reaction chamber after a flow of the first reactant has ceased. The second reactant is introduced in vapor phase into the reaction chamber while the first reactant is adsorbed onto the substrate surface. The second reactant comprises a 1:1:1 ratio of dihydrogen (H2), a nitrogen-containing reactant, and an oxygen-containing reactant. A plasma is ignited based on the second reactant. The substrate surface is exposed to the plasma. The plasma is extinguished. Gas from the reaction chamber is purged.
(FR)
La présente invention concerne un procédé de traitement d'un substrat. Un premier réactif en phase vapeur est introduit dans une chambre de réaction à l'intérieur de laquelle se trouve le substrat. Le premier réactif peut être adsorbé sur la surface du substrat. La partie non réactive du premier réactif est purgée de la chambre de réaction après que l'écoulement du premier réactif a cessé. Le second réactif est introduit en phase vapeur dans la chambre de réaction tandis que le premier réactif est adsorbé sur la surface du substrat. Le second réactif comprend un rapport de 1:1:1 de dihydrogène (H2), d'un réactif contenant de l'azote et d'un réactif contenant de l'oxygène. Un plasma est allumé sur la base du second réactif. La surface du substrat est exposée au plasma. Le plasma est éteint. Le gaz provenant de la chambre de réaction est purgé.
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