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1. WO2020006021 - ZrCoBi BASED HALF HEUSLERS WITH HIGH THERMOELECTRIC CONVERSION EFFICIENCY

Publication Number WO/2020/006021
Publication Date 02.01.2020
International Application No. PCT/US2019/039139
International Filing Date 26.06.2019
IPC
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
35
Thermoelectric devices comprising a junction of dissimilar materials, i.e. exhibiting Seebeck or Peltier effect with or without other thermoelectric effects or thermomagnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
12
Selection of the material for the legs of the junction
14
using inorganic compositions
20
comprising metals only
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
35
Thermoelectric devices comprising a junction of dissimilar materials, i.e. exhibiting Seebeck or Peltier effect with or without other thermoelectric effects or thermomagnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
35
Thermoelectric devices comprising a junction of dissimilar materials, i.e. exhibiting Seebeck or Peltier effect with or without other thermoelectric effects or thermomagnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
12
Selection of the material for the legs of the junction
14
using inorganic compositions
18
comprising arsenic or antimony or bismuth
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
35
Thermoelectric devices comprising a junction of dissimilar materials, i.e. exhibiting Seebeck or Peltier effect with or without other thermoelectric effects or thermomagnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
34
Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
H01L 35/20 (2006.01)
H01L 35/00 (2006.01)
H01L 35/18 (2006.01)
H01L 35/34 (2006.01)
CPC
H01L 35/18
H01L 35/34
Applicants
  • UNIVERSITY OF HOUSTON SYSTEM [US/US]; 4800 Calhoun Road Houston, Texas 77004, US
Inventors
  • REN, Zhifeng; US
  • ZHU, Hangtian; US
Agents
  • MAAG, Gregory L.; US
Priority Data
62/690,25626.06.2018US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) ZrCoBi BASED HALF HEUSLERS WITH HIGH THERMOELECTRIC CONVERSION EFFICIENCY
(FR) MATÉRIAUX SEMI-HEUSLER À BASE DE ZRCOBI À HAUT RENDEMENT DE CONVERSION THERMOÉLECTRIQUE
Abstract
(EN)
A ZrCoBi-based p-type half-Heusler material can have a formula: ZrCoBi1-x-ySnxSby, where x can vary between 0.01 and 0.25, and y can vary between 0 and 0.2. An average dimensionless figure-of-merit (ZT) for the material can be greater than or equal to about 0.80 as calculated by an integration method for temperatures between 300 and 973 K. A ZrCoBi-based n-type half-Heusler material can have a formula: ZrCo1-xNixBi1-ySby, where x can vary between 0.01 and 0.25, and y can vary between 0 and 0.3. The material has an average dimensionless figure-of-merit (ZT) is greater than or equal to about 0.65 as calculated by an integration method for temperatures between 300 and 973 K.
(FR)
L'invention porte sur un matériau semi-Heusler du type p à base de ZrCoBi qui peut avoir une formule : ZrCoBi1-x-ySnxSby, x pouvant varier entre 0,01 et 0,25, et y pouvant varier entre 0 et 0,2.Un facteur de mérite sans dimension (ZT) moyen pour le matériau peut être supérieur ou égal à environ 0,80, calculé par une méthode d'intégration pour des températures comprises entre 300 et 973 K. L'invention porte également sur un matériau semi-Heusler du type n à base de ZrCoBi qui peut avoir une formule : ZrCo1-xNixBi1-ySby, x pouvant varier entre 0,01 et 0,25, et y pouvant varier entre 0 et 0,3. Le matériau a un facteur de mérite sans dimension (ZT) moyen qui est supérieur ou égal à environ 0,65, calculé par une méthode d'intégration pour des températures comprises entre 300 et 973 K.
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