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1. WO2020005931 - IMPROVING AZIMUTHAL CRITICAL DIMENSION NON-UNIFORMITY FOR DOUBLE PATTERNING PROCESS

Publication Number WO/2020/005931
Publication Date 02.01.2020
International Application No. PCT/US2019/038970
International Filing Date 25.06.2019
IPC
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67
Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30
Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
31
to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After-treatment of these layers; Selection of materials for these layers
3105
After-treatment
311
Etching the insulating layers
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
027
Making masks on semiconductor bodies for further photolithographic processing, not provided for in group H01L21/18 or H01L21/34165
H01L 21/67 (2006.01)
H01L 21/02 (2006.01)
H01L 21/311 (2006.01)
H01L 21/027 (2006.01)
CPC
C23C 16/45536
C23C 16/45565
C23C 16/52
Applicants
  • LAM RESEARCH CORPORATION [US/US]; 4650 Cushing Parkway Fremont, California 94538, US
Inventors
  • AGARWAL, Pulkit; US
  • LAVOIE, Adrien; US
  • PASQUALE, Frank Loren; US
  • KUMAR, Ravi; US
Agents
  • WIGGINS, Michael D.; US
Priority Data
16/023,06929.06.2018US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) IMPROVING AZIMUTHAL CRITICAL DIMENSION NON-UNIFORMITY FOR DOUBLE PATTERNING PROCESS
(FR) AMÉLIORATION DE NON-UNIFORMITÉ DE DIMENSION CRITIQUE AZIMUTALE D'UN PROCÉDÉ DE DOUBLE FORMATION DE MOTIFS
Abstract
(EN)
A method for adjusting a position of a showerhead in a processing chamber includes arranging a substrate that includes a plurality of mandrels on a substrate support in the processing chamber and adjusting a position of the showerhead relative to the substrate support. Adjusting the position of the showerhead includes adjusting the showerhead to a tilted position based on data indicating a correlation between the position of the showerhead and azimuthal non-uniformities associated with etching the substrate. The method further includes, with the showerhead in the tilted position as adjusted based on the data, performing a trim step to etch the plurality of mandrels.
(FR)
Selon la présente invention, un procédé de réglage de la position d'une pomme de douche dans une chambre de traitement consiste à agencer un substrat qui comprend une pluralité de mandrins sur un support de substrat dans la chambre de traitement et à régler une position de la pomme de douche par rapport au support de substrat. Le réglage de la position de la pomme de douche consiste à régler la pomme de douche à une position inclinée sur la base de données indiquant une corrélation entre la position de la pomme de douche et des non-uniformités azimutales associées à la gravure du substrat. Le procédé consiste en outre, la pomme de douche étant dans la position inclinée tel que réglé sur la base des données, à effectuer une étape de rognage pour graver la pluralité de mandrins.
Latest bibliographic data on file with the International Bureau