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1. WO2020005904 - GROWTH OF PLURAL SAMPLE RODS TO DETERMINE IMPURITY BUILD-UP DURING PRODUCTION OF SINGLE CRYSTAL SILICON INGOTS

Publication Number WO/2020/005904
Publication Date 02.01.2020
International Application No. PCT/US2019/038928
International Filing Date 25.06.2019
IPC
C CHEMISTRY; METALLURGY
30
CRYSTAL GROWTH
B
SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
15
Single-crystal growth by pulling from a melt, e.g. Czochralski method
20
Controlling or regulating
C CHEMISTRY; METALLURGY
30
CRYSTAL GROWTH
B
SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
29
Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
02
Elements
06
Silicon
C30B 15/20 (2006.01)
C30B 29/06 (2006.01)
CPC
C30B 15/20
C30B 29/06
Applicants
  • GLOBALWAFERS CO., LTD. [CN/CN]; No. 8 Industrial East Road 2 Science-Based Industrial Park Hsinchu, TW
Inventors
  • RYU, JaeWoo; US
  • HUDSON, Carissima Marie; US
Agents
  • SCHUTH, Richard A.; US
  • VANDER MOLEN, Michael J.; US
  • MUNSELL, Michael G.; US
  • KEPPEL, Nicholas A.; US
  • POLAND, Eric G.; US
  • BUTLER, Christopher H.; US
  • ALLEN, Derick E.; US
  • AMODIO, Lucas M.; US
  • ATKINS, Bruce T.; US
  • BLOCK, Zachary J.; US
  • BRENNAN, Patrick E.; US
  • BROPHY, Richard L.; US
  • COYLE, Patrick J.; US
  • FITZGERALD, Daniel M.; US
  • FLOREK, Erin M.; US
  • GOFF, Christopher M.; US
  • HARPER, James D.; US
  • HARPER, Jesse S.; US
  • HEINEN JR., James M.; US
  • HENSON, James W.; US
  • HILMERT, Laura J.; US
  • HOEKEL, Jennifer E.; US
  • LONGMEYER, Michael H.; US
  • MUELLER, Jacob R.; US
  • RASCHE, Patrick W.; US
  • REESER III, Robert B.; US
  • SNIDER, Josh C.; US
  • THOMAS, Mark A.; US
  • WULLER, Adam R.; US
  • ZEE-CHENG, Brendan R.; US
  • ZYCHLEWICZ, William J.; US
  • MOLLER-JACOBS, Rose L.; US
  • VANENGELEN, Catherine E.; US
  • TRUITT, Tracey S.; US
  • KU, Deborah S.; US
  • SCHNEIDERJOHN, Robert L.; US
  • GOLTERMAN, Robert E.; US
  • VANDER TUIG, Marc W.; US
  • ROSS, Katherine L.; US
  • VANENGELEN, Michael R.; US
  • BEHM, JR., Edward F.; US
  • BENNETT, Rachel; US
  • BRACCIANO, Daniel D.; US
  • CARWIN, Michael W.; US
  • MARTINEZ, Alexandra; US
  • WIERSMA, Zachary; US
Priority Data
16/020,70127.06.2018US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) GROWTH OF PLURAL SAMPLE RODS TO DETERMINE IMPURITY BUILD-UP DURING PRODUCTION OF SINGLE CRYSTAL SILICON INGOTS
(FR) CROISSANCE DE PLUSIEURS TIGES D'ÉCHANTILLON POUR DÉTERMINER UNE ACCUMULATION D'IMPURETÉS PENDANT LA PRODUCTION DE LINGOTS DE SILICIUM MONOCRISTALLIN
Abstract
(EN)
Methods for forming single crystal silicon ingots in which plural sample rods are grown from the melt are disclosed. A parameter related to the impurity concentration of the melt or ingot is measured. In some embodiments, the sample rods each have a diameter less than the diameter of the product ingot.
(FR)
L'invention concerne des procédés de formation de lingots de silicium monocristallin dans lesquels plusieurs tiges d'échantillon sont formées à partir d'une masse fondue. Un paramètre lié à la concentration en impuretés de la masse fondue ou du lingot est mesuré. Dans certains modes de réalisation, les tiges d'échantillon ont chacune un diamètre inférieur au diamètre du lingot de produit.
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