Processing

Please wait...

Settings

Settings

1. WO2020005901 - SAMPLE ROD GROWTH AND RESISTIVITY MEASUREMENT DURING SINGLE CRYSTAL SILICON INGOT PRODUCTION

Publication Number WO/2020/005901
Publication Date 02.01.2020
International Application No. PCT/US2019/038923
International Filing Date 25.06.2019
IPC
C CHEMISTRY; METALLURGY
30
CRYSTAL GROWTH
B
SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
15
Single-crystal growth by pulling from a melt, e.g. Czochralski method
20
Controlling or regulating
C CHEMISTRY; METALLURGY
30
CRYSTAL GROWTH
B
SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
29
Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
02
Elements
06
Silicon
C30B 15/20 (2006.01)
C30B 29/06 (2006.01)
CPC
C30B 15/14
C30B 15/20
C30B 29/06
Applicants
  • GLOBALWAFERS CO., LTD. [CN/CN]; No. 8 Industrial East Road 2 Science-Based Industrial Park Hsinchu, TW
Inventors
  • RYU, JaeWoo; US
  • PHILLIPS, Richard J.; US
  • STANDLEY, Robert; US
  • LEE, HyungMin; US
  • LEE, YoungJung; US
  • HUDSON, Carissima Marie; US
Agents
  • SCHUTH, Richard A.; US
  • VANDER MOLEN, Michael J.; US
  • MUNSELL, Michael G.; US
  • KEPPEL, Nicholas A.; US
  • POLAND, Eric G.; US
  • BUTLER, Christopher H.; US
  • ALLEN, Derick E.; US
  • AMODIO, Lucas M.; US
  • ATKINS, Bruce T.; US
  • BLOCK, Zachary J.; US
  • BRENNAN, Patrick E.; US
  • BROPHY, Richard L.; US
  • COYLE, Patrick J.; US
  • FITZGERALD, Daniel M.; US
  • FLOREK, Erin M.; US
  • GOFF, Christopher M.; US
  • HARPER, James D.; US
  • HARPER, Jesse S.; US
  • HEINEN JR., James M.; US
  • HENSON, James W.; US
  • HILMERT, Laura J.; US
  • HOEKEL, Jennifer E.; US
  • LONGMEYER, Michael H.; US
  • MUELLER, Jacob R.; US
  • RASCHE, Patrick W.; US
  • REESER III, Robert B.; US
  • SNIDER, Josh C.; US
  • THOMAS, Mark A.; US
  • WULLER, Adam R.; US
  • ZEE-CHENG, Brendan R.; US
  • ZYCHLEWICZ, William J.; US
  • MOLLER-JACOBS, Rose L.; US
  • VANENGELEN, Catherine E.; US
  • TRUITT, Tracey S.; US
  • KU, Deborah S.; US
  • SCHNEIDERJOHN, Robert L.; US
  • GOLTERMAN, Robert E.; US
  • VANDER TUIG, Marc W.; US
  • ROSS, Katherine L.; US
  • VANENGELEN, Michael R.; US
  • BEHM, JR., Edward F.; US
  • BENNETT, Rachel; US
  • BRACCIANO, Daniel D.; US
  • CARWIN, Michael W.; US
  • MARTINEZ, Alexandra; US
  • WIERSMA, Zachary; US
Priority Data
16/020,69827.06.2018US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) SAMPLE ROD GROWTH AND RESISTIVITY MEASUREMENT DURING SINGLE CRYSTAL SILICON INGOT PRODUCTION
(FR) MESURE DE LA CROISSANCE ET DE LA RÉSISTIVITÉ D'UNE TIGE ÉCHANTILLON PENDANT LA PRODUCTION D'UN LINGOT DE SILICIUM MONOCRISTALLIN
Abstract
(EN)
Methods for forming single crystal silicon ingots with improved resistivity control. The methods involve growth and resistivity measurement of a sample rod. The sample rod may have a diameter less than the diameter of the product ingot. The resistivity of the sample rod may be measured directly by contacting a resistivity probe with a planar segment formed on the sample rod. The sample rod may be annealed in a thermal donor kill cycle prior to measuring the resistivity.
(FR)
L’invention concerne des procédés de formation de lingots de silicium monocristallin présentant un meilleur contrôle de la résistivité. Les procédés impliquent la mesure de la croissance et de la résistivité d'une tige échantillon. La tige échantillon peut avoir un diamètre inférieur au diamètre du lingot de produit. La résistivité de la tige échantillon peut être mesurée directement par la mise en contact d'une sonde de résistivité avec un segment plan formé sur la tige échantillon. La tige échantillon peut être recuite dans un cycle de destruction de donneur thermique avant la mesure de la résistivité.
Latest bibliographic data on file with the International Bureau