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1. WO2020005827 - LED UTILIZING INTERNAL COLOR CONVERSION WITH LIGHT EXTRACTION ENHANCEMENTS

Publication Number WO/2020/005827
Publication Date 02.01.2020
International Application No. PCT/US2019/038717
International Filing Date 24.06.2019
IPC
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02
characterised by the semiconductor bodies
08
with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02
characterised by the semiconductor bodies
10
with a light reflecting structure, e.g. semiconductor Bragg reflector
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
44
characterised by the coatings, e.g. passivation layer or anti-reflective coating
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
36
characterised by the electrodes
38
with a particular shape
H01L 33/08 (2010.01)
H01L 33/10 (2010.01)
H01L 33/44 (2010.01)
H01L 33/38 (2010.01)
CPC
H01L 33/08
H01L 33/10
H01L 33/382
H01L 33/385
H01L 33/44
Applicants
  • LUMILEDS LLC [US/US]; 370 West Trimble Road San Jose, California 95131, US
Inventors
  • ARMITAGE, Robert; US
  • WILDESON, Isaac Harshman; US
  • DEB, Parijat Pramil; US
Agents
  • SCHMIDT, Mark E.; US
Priority Data
16/018,88326.06.2018US
18186979.302.08.2018EP
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) LED UTILIZING INTERNAL COLOR CONVERSION WITH LIGHT EXTRACTION ENHANCEMENTS
(FR) DEL UTILISANT UNE CONVERSION DE COULEUR INTERNE AVEC DES AMÉLIORATIONS D'EXTRACTION DE LUMIÈRE
Abstract
(EN)
A light emitting diode (LED) device may include an n-type layer formed on a transparent substrate. A photoluminescent (PL) in the n-type layer quantum well (QW) and an electroluminescent (EL) QW may be formed on the n-type layer. The PL QW and the EL QW may be separated from one another by a portion of the n-type layer. A p-type layer may be formed on the EL QW. Trenches may be formed extending into the n-type layer, the trenches defining an emitting area. A passivation material may be formed on sidewalls of the trenches and n-type contacts may be formed therein. A p-type contact may be formed on an upper surface of the p-type layer. A dichroic mirror may be formed on at least a lower surface of the transparent substrate.
(FR)
La présente invention concerne un dispositif à diode électroluminescente (DEL) qui peut comprendre une couche de type n formée sur un substrat transparent. Une photoluminescence (PL) dans le puits quantique de couche de type n (puits quantique) et un puits électroluminescent (EL) peuvent être formés sur la couche de type n. Le puits quantique photoluminescent (PL QW) et le puits quantique électroluminescent (EL QW) peuvent être séparés les uns des autres par une partie de la couche de type n. Une couche de type p peut être formée sur le EL QW. Des tranchées peuvent être formées s'étendant dans la couche de type n, les tranchées définissant une zone d'émission. Un matériau de passivation peut être formé sur les parois latérales des tranchées et des contacts de type n peuvent être formés à l'intérieur de ceux-ci. Un contact de type p peut être formé sur une surface supérieure de la couche de type p. Un miroir dichroïque peut être formé sur au moins une surface inférieure du substrat transparent.
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