Processing

Please wait...

Settings

Settings

1. WO2020005776 - SELECTIVE GROWTH OF METAL-CONTAINING HARDMASK THIN FILMS

Publication Number WO/2020/005776
Publication Date 02.01.2020
International Application No. PCT/US2019/038591
International Filing Date 21.06.2019
IPC
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
027
Making masks on semiconductor bodies for further photolithographic processing, not provided for in group H01L21/18 or H01L21/34165
033
comprising inorganic layers
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70
Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof
71
Manufacture of specific parts of devices defined in group H01L21/7086
768
Applying interconnections to be used for carrying current between separate components within a device
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30
Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
31
to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After-treatment of these layers; Selection of materials for these layers
3105
After-treatment
311
Etching the insulating layers
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
H01L 21/033 (2006.01)
H01L 21/768 (2006.01)
H01L 21/311 (2006.01)
H01L 21/02 (2006.01)
CPC
C23C 16/042
C23C 16/24
C23C 16/32
C23C 16/36
C23C 16/52
H01J 2237/3321
Applicants
  • LAM RESEARCH CORPORATION [US/US]; 4650 Cushing Parkway Fremont, California 94538, US
Inventors
  • SMITH, David Charles; US
  • HENRI, Jon; US
  • HAUSMANN, Dennis M.; US
  • LEMAIRE, Paul C.; US
Agents
  • TSAI, Patricia; US
  • WEAVER, Jeffrey K.; US
  • AUSTIN, James E.; US
  • VILLENEUVE, Joseph M.; US
  • SAMPSON, Roger S.; US
  • BERGIN, Denise S.; US
  • GRIFFITH, John F.; US
  • SCHOLZ, Christian D.; US
Priority Data
16/022,50328.06.2018US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) SELECTIVE GROWTH OF METAL-CONTAINING HARDMASK THIN FILMS
(FR) CROISSANCE SÉLECTIVE DE FILMS MINCES DE MASQUE DUR CONTENANT DU MÉTAL
Abstract
(EN)
Methods and apparatuses for selectively growing metal-containing hard masks are provided herein. Methods include providing a substrate having a pattern of spaced apart features, each feature having a top horizontal surface, filling spaces between the spaced apart features with carbon-containing material to form a planar surface having the top horizontal surfaces of the features and carbon-containing material, selectively depositing a metal-containing hard mask on the top horizontal surfaces of the features relative to the carbon-containing material, and selectively removing the carbon-containing material relative to the metal-containing hard mask and features.
(FR)
La présente invention concerne des procédés et des appareils destinés à la croissance sélective de masques durs contenant du métal. Les procédés consistent à utiliser un substrat ayant un motif de éléments espacés, chaque élément ayant une surface horizontale supérieure, à remplir les espaces entre les éléments espacés avec un matériau contenant du carbone pour former une surface plane ayant les surfaces horizontales supérieures des éléments et du matériau contenant du carbone, à déposer sélectivement un masque dur contenant du métal sur les surfaces horizontales supérieures des éléments par rapport au matériau contenant du carbone, et à retirer sélectivement le matériau contenant du carbone par rapport au masque dur contenant du métal et aux éléments.
Latest bibliographic data on file with the International Bureau