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1. WO2020005754 - MICROELECTRONIC DEVICE INTERCONNECT STRUCTURE

Publication Number WO/2020/005754
Publication Date 02.01.2020
International Application No. PCT/US2019/038449
International Filing Date 21.06.2019
IPC
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23
Details of semiconductor or other solid state devices
52
Arrangements for conducting electric current within the device in operation from one component to another
522
including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
528
Layout of the interconnection structure
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23
Details of semiconductor or other solid state devices
34
Arrangements for cooling, heating, ventilating or temperature compensation
36
Selection of materials, or shaping, to facilitate cooling or heating, e.g. heat sinks
367
Cooling facilitated by shape of device
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23
Details of semiconductor or other solid state devices
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23
Details of semiconductor or other solid state devices
48
Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads or terminal arrangements
482
consisting of lead-in layers inseparably applied to the semiconductor body
H01L 23/528 (2006.01)
H01L 23/367 (2006.01)
H01L 23/00 (2006.01)
H01L 23/482 (2006.01)
CPC
H01L 21/4846
H01L 2224/0401
H01L 2224/0603
H01L 2224/131
H01L 2224/16014
H01L 2224/1607
Applicants
  • INTEL CORPORATION [US/US]; 2200 Mission College Boulevard Santa Clara, California 95054, US
Inventors
  • DUBEY, Manish; US
  • GANESAN, Kousik; US
  • NAD, Suddhasattwa; US
  • HEATON, Thomas; US
  • CHAVALI, Sri Chaitra Jyotsna; US
  • ALUR, Amruthavalli Pallavi; US
Agents
  • PERDOK, Monique M.; US
  • ARORA, Suneel / U.S. Reg. No. 42,267; US
  • BEEKMAN, Marvin / U.S. Reg. No. 38,377; US
  • BLACK, David W. / U.S. Reg. No. 42,331; US
  • SCHEER, Bradley W. / U.S. Reg. No. 47,059; US
  • LANG, Roger / U.S. Reg. No. 58,829; US
Priority Data
16/022,45328.06.2018US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) MICROELECTRONIC DEVICE INTERCONNECT STRUCTURE
(FR) STRUCTURE D'INTERCONNEXION DE DISPOSITIF MICROÉLECTRONIQUE
Abstract
(EN)
A microelectronic device is formed including two or more structures physically and electrically engaged with one another through coupling of conductive features on the two structures. The conductive features may be configured to be tolerant of bump thickness variation in either of the structures. Such bump thickness variation tolerance can result from a contact structure on a first structure including a protrusion configured to extend in the direction of the second structure and to engage a deformable material on that second structure.
(FR)
Selon la présente invention, un dispositif microélectronique est formé, lequel dispositif comprend deux structures ou plus qui sont physiquement et électriquement en prise l'une avec l'autre par l'intermédiaire d'un couplage de caractéristiques conductrices sur les deux structures. Les éléments conducteurs peuvent être configurés pour être tolérants à une variation d'épaisseur de bosse dans l'une ou l'autre des structures. Une telle tolérance de variation d'épaisseur de bosse peut résulter d'une structure de contact sur une première structure comprenant une saillie conçue pour s'étendre dans la direction de la seconde structure et pour venir en prise avec un matériau déformable sur cette seconde structure.
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