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1. WO2020005486 - SELECTIVE ATOMIC LAYER ETCHING

Publication Number WO/2020/005486
Publication Date 02.01.2020
International Application No. PCT/US2019/035623
International Filing Date 05.06.2019
IPC
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30
Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302
to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
306
Chemical or electrical treatment, e.g. electrolytic etching
3065
Plasma etching; Reactive-ion etching
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30
Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
31
to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After-treatment of these layers; Selection of materials for these layers
3105
After-treatment
311
Etching the insulating layers
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30
Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
31
to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After-treatment of these layers; Selection of materials for these layers
3205
Deposition of non-insulating-, e.g. conductive- or resistive-, layers, on insulating layers; After-treatment of these layers
321
After-treatment
3213
Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67
Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H ELECTRICITY
05
ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
H
PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY- CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
1
Generating plasma; Handling plasma
24
Generating plasma
46
using applied electromagnetic fields, e.g. high frequency or microwave energy
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
J
ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
37
Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
32
Gas-filled discharge tubes
H01L 21/3065 (2006.01)
H01L 21/311 (2006.01)
H01L 21/3213 (2006.01)
H01L 21/67 (2006.01)
H05H 1/46 (2006.01)
H01J 37/32 (2006.01)
CPC
H01J 37/00
H01L 21/02205
H01L 21/31116
H01L 21/31144
Applicants
  • LAM RESEARCH CORPORATION [US/US]; 4650 Cushing Parkway, M/S CA-1 Fremont, California 94538, US
Inventors
  • WANG, Chia-Chun; US
  • HUDSON, Eric; US
  • SERINO, Andrew Clark; US
  • DRAEGER, Nerissa; US
  • ZHANG, Zhonghao; US
Agents
  • LEE, Michael; US
Priority Data
16/019,16926.06.2018US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) SELECTIVE ATOMIC LAYER ETCHING
(FR) GRAVURE SÉLECTIVE DE COUCHE ATOMIQUE
Abstract
(EN)
A method for selectively etching a dielectric layer with respect to an epitaxial layer or metal-based hardmask is provided. The method comprises performing a plurality of cycles. Each cycle comprises a deposition phase and an activation phase. The deposition phase comprises flowing a deposition gas, wherein the deposition gas comprises helium and a hydrofluorocarbon or fluorocarbon, forming the deposition gas into a plasma to effect a fluorinated polymer deposition, and stopping the flow of the deposition gas. The activation phase comprises flowing an activation gas comprising an ion bombardment gas, forming the activation gas into a plasma, providing an activation bias to cause ion bombardment of the fluorinated polymer deposition, wherein the ion bombardment activates fluorine from the fluorinated polymer deposition to etch the dielectric layer, and stopping the flow of the activation gas.
(FR)
L'invention concerne un procédé de gravure sélective d'une couche diélectrique par rapport à une couche épitaxiale ou un masque dur à base de métal. Le procédé consiste à réaliser une pluralité de cycles. Chaque cycle comprend une phase de dépôt et une phase d'activation. La phase de dépôt consiste à faire circuler un gaz de dépôt, le gaz de dépôt comprenant de l'hélium et un hydrofluorocarbone ou un fluorocarbone, à créer un plasma à partir du gaz de dépôt pour effectuer un dépôt de polymère fluoré, et à interrompre la circulation du gaz de dépôt. La phase d'activation consiste à faire circuler un gaz d'activation comprenant un gaz de bombardement ionique, à créer un plasma à partir du gaz d'activation, à fournir une polarisation d'activation de façon à provoquer le bombardement ionique du dépôt de polymère fluoré, le bombardement ionique activant le fluor contenu dans le dépôt de polymère fluoré de sorte à graver la couche diélectrique, et à interrompre la circulation du gaz d'activation.
Latest bibliographic data on file with the International Bureau