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1. WO2020005426 - QUANTUM DOT DEVICES WITH FINS AND PARTIALLY WRAPPED GATES

Publication Number WO/2020/005426
Publication Date 02.01.2020
International Application No. PCT/US2019/033709
International Filing Date 23.05.2019
IPC
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66
Types of semiconductor device
68
controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76
Unipolar devices
772
Field-effect transistors
775
with one-dimensional charge carrier gas channel, e.g. quantum wire FET
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66
Types of semiconductor device
68
controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76
Unipolar devices
772
Field-effect transistors
78
with field effect produced by an insulated gate
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
40
Electrodes
41
characterised by their shape, relative sizes or dispositions
423
not carrying the current to be rectified, amplified or switched
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66
Types of semiconductor device
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27
Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02
including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04
the substrate being a semiconductor body
08
including only semiconductor components of a single kind
085
including field-effect components only
088
the components being field-effect transistors with insulated gate
H01L 29/775 (2006.01)
H01L 29/78 (2006.01)
H01L 29/423 (2006.01)
H01L 29/66 (2006.01)
H01L 27/088 (2006.01)
CPC
B82Y 10/00
H01L 27/0886
H01L 29/0692
H01L 29/127
H01L 29/401
H01L 29/423
Applicants
  • INTEL CORPORATION [US/US]; 2200 Mission College Boulevard Santa Clara, California 95054-1549, US
Inventors
  • GEORGE, Hubert C.; US
  • LAMPERT, Lester; US
  • CLARKE, James S.; US
  • PILLARISETTY, Ravi; US
  • YOSCOVITS, Zachary R.; US
  • THOMAS, Nicole K.; US
  • CAUDILLO, Roman; US
  • SINGH, Kanwaljit; NL
  • MICHALAK, David J.; US
  • ROBERTS, Jeanette M.; US
Agents
  • ZAGER, Laura A.; US
Priority Data
16/019,33426.06.2018US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) QUANTUM DOT DEVICES WITH FINS AND PARTIALLY WRAPPED GATES
(FR) DISPOSITIFS À POINTS QUANTIQUES DOTÉS D'AILETTES ET DE PORTES PARTIELLEMENT ENVELOPPÉES
Abstract
(EN)
Disclosed herein are quantum dot devices, as well as related computing devices and methods. For example, in some embodiments, a quantum dot device may include: a base; a fin extending away from the base, wherein the fin has a first side face and a second side face, and the fin includes a quantum well layer; and a gate above the fin, wherein the gate extends down along the first side face.
(FR)
L'invention concerne des dispositifs à points quantiques, ainsi que des dispositifs et des procédés informatiques associés. Par exemple, dans certains modes de réalisation, un dispositif à points quantiques peut comprendre : une base; une ailette s'étendant à l'opposé de la base, l'ailette ayant une première face latérale et une seconde face latérale, et l'ailette comprenant une couche de puits quantique; et une grille au-dessus de l'ailette, la grille s'étendant vers le bas le long de la première face latérale.
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