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1. WO2020005417 - ADAPTIVE PROGRAMMING OF QUANTUM DOT QUBIT DEVICES

Publication Number WO/2020/005417
Publication Date 02.01.2020
International Application No. PCT/US2019/033307
International Filing Date 21.05.2019
IPC
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66
Types of semiconductor device
68
controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76
Unipolar devices
772
Field-effect transistors
80
with field effect produced by a PN or other rectifying junction gate
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
02
Semiconductor bodies
12
characterised by the materials of which they are formed
15
Structures with periodic or quasi periodic potential variation, e.g. multiple quantum wells, superlattices
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
02
Semiconductor bodies
12
characterised by the materials of which they are formed
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66
Types of semiconductor device
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
25
Assemblies consisting of a plurality of individual semiconductor or other solid state devices
03
all the devices being of a type provided for in the same subgroup of groups H01L27/-H01L51/128
04
the devices not having separate containers
065
the devices being of a type provided for in group H01L27/78
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
25
Assemblies consisting of a plurality of individual semiconductor or other solid state devices
03
all the devices being of a type provided for in the same subgroup of groups H01L27/-H01L51/128
04
the devices not having separate containers
07
the devices being of a type provided for in group H01L29/78
H01L 29/80 (2006.01)
H01L 29/15 (2006.01)
H01L 29/12 (2006.01)
H01L 29/66 (2006.01)
H01L 21/02 (2006.01)
H01L 25/065 (2006.01)
CPC
G06F 1/20
G06F 17/18
G06N 10/00
G06N 20/00
Applicants
  • INTEL CORPORATION [US/US]; 2200 Mission College Boulevard Santa Clara, California 95054-1549, US
Inventors
  • LAMPERT, Lester; US
  • PILLARISETTY, Ravi; US
  • THOMAS, Nicole K.; US
  • GEORGE, Hubert C.; US
  • ROBERTS, Jeanette M.; US
  • MICHALAK, David J.; US
  • CAUDILLO, Roman; US
  • YOSCOVITS, Zachary R.; US
  • CLARKE, James S.; US
Agents
  • HARTMANN, Natalya; US
Priority Data
16/016,84025.06.2018US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) ADAPTIVE PROGRAMMING OF QUANTUM DOT QUBIT DEVICES
(FR) PROGRAMMATION ADAPTATIVE DE DISPOSITIFS QUBITS À POINTS QUANTIQUES
Abstract
(EN)
Embodiments of the present disclosure provide quantum circuit assemblies that implement adaptive programming of quantum dot qubit devices. An example quantum circuit assembly includes a quantum circuit component including a quantum dot qubit device, and a control logic coupled to the quantum circuit component. The control logic is configured to adaptively program the quantum dot qubit device by iterating a sequence of applying one or more signals to the quantum dot qubit device, determining a state of at least one qubit of the quantum dot qubit device, and using the determined state to modify the signals to be applied to the quantum dot qubit device in the next iteration. In this manner, the signals may be fine-tuned to achieve a higher probability of the qubit(s) in the quantum dot qubit device being set to the desired state.
(FR)
La présente inventions, selon des modes de réalisation, concernent des ensembles circuits quantiques qui mettent en œuvre une programmation adaptative de dispositifs qubits à points quantiques. Un ensemble circuit quantique donné à titre d'exemple comprend un composant de circuit quantique comprenant un dispositif qubit à points quantiques, et une logique de commande couplée au composant de circuit quantique. La logique de commande est configurée pour programmer de manière adaptative le dispositif qubit à points quantiques par itération d'une séquence d'application d'un ou plusieurs signaux au dispositif qubit à points quantiques, déterminer un état d'au moins un qubit du dispositif qubit à points quantiques, et utiliser l'état déterminé de façon à modifier les signaux à appliquer au dispositif qubit à points quantiques dans l'itération suivante. Ainsi, les signaux peuvent être soumis à un accordage fin de telle sorte que la probabilité que ledit qubit dans le dispositif qubit à points quantiques soit réglé à l'état recherché est plus élevée.
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