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1. WO2020005251 - SWING APPARATUS, METHOD FOR PROCESSING A SUBSTRATE, SWING MODULE FOR RECEIVING A SUBSTRATE FROM A TRANSFER CHAMBER, AND VACUUM PROCESSING SYSTEM

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SWING FOR PROCESSING MODULE FOR RECEIVI NG A SUBSTRATE FROM A TR ANSFER AN D PROCESSING SYSTEM Embodiments of the present disclosure relate to apparatuses and modules for moving a substrate to one or more the embodiments of the present relate to methods for processing a and to vacuum processing Several methods are known for depositing a For substrates may be coated by evaporation a physical vapor deposition such as a sputering a spraying or a chemical vapor The process can be performed a processing chamber of a deposition apparatus where the substrate to be coated is A deposition material is provided the processing The sputter deposition process can be used to deposit material layer on the for example a layer of insulating This involves ejecting material from a target onto The target to be deposited on the is bombarded with generated atoms of the target material a surface of the The dislodged the material layer on the a reactive sputter the dislodged atoms can react with a gas in the plasma for example nitrogen or to so a nitride or an oxynitride of the on the other processes like or the like can be conducted In processing For processes may considered for area in display manufacturing Coated substrates can be used in several applications and several technical For applications may include insulating such as semiconductor substrates thin film transistors color or the larger substrates more complex and thinner coatings results m larger process process modules connected series may have some drawbacks the redundancy and For coating of large area the glass can be aligned with a mask to avoi Coating the glass edge on the back side to seal the process from a glass handle the substrate on the edges of the substrate daring the This to issues with particles uniformity due to glass mask alignments and deposition the the deposition of particles generated in the processing chamber outside the target substrate on of the process for example moving mechanical could negatively affect the performance therefore the reliability of said in view of the there need for methods and which can provide for an improved uniformity of the deposited layer as well as for reduction of particle in or close to the processing A swing a method for processing a swing module for receiving a substrate a transfer and vacuum processing system Further aspects and modifications be derived from the dependent specification the According to one swing apparatus for moving substrate relative one or more deposition sources having longitudinal axis The apparatus includes support body for holding the a mechanism coupled the support body for moving the substrate by an angle around a rotational axis vary the substrate a transfer or orientation to processing vertical orientation at a and a linear motion mechanism to the suppor body for translating the substrate relative to the longitudinal axis of the deposition source the substrate is in the processing According to another a method for substrate is The method includes holding the substrate on a support moving the substrate relative to a depo source for processing the substrate having a longitudinal movement of the substrate being carried out by an angle around a axis to vary the substrate orientation fro a transfer or horizontal orientation to a processing or vertical orientation by a rotation mechanism coupled to the support processing a surface of the substrate with the deposition and translating the substrate relative to the longitudinal of the deposition when substrate the processing orientation by a linear motion mechanism coupled to the support According to another a swing module for receiving a substrate from a transfer chamber of a vacuum processing system and for positioning said substrate in a processing area of a processing chamber of vacuum processing system is The swing module include a vacuum a support body for holding the substrate within vacuum a rotation mechanism coupled to the support body for moving foe substrate by an angle around a rotational to vary the substrate orientation a tra or horizontal orientation to a processing or vertical and a linear motion mechanism coupled to foe support body for translating the substrate sideways in relation to the longitudinal axis foe deposition source when the e is in foe processing According another a vacuum processing system for processing a at least including deposition source with a longitudinal for processing at least a coupled to the processing for positioning substrate a area of the processing and transfer operatively coupled the swing for moving substrate to swing odule includes a a support body for holding the substrate the vacuum a rotation mechanism coupled to the support body for moving the substrate by angle a relational axis to vary the substrate orientation front a transfer or horizontal orientation to a processing or orientations and a linear motion mechanism coupled to the body for translating the substrate in relation to the longitudinal axis of fee deposition when the substrate in the processing BRIEF OF THE So that the manner which above recited features of fee present disclosure can be understood in a more particular description of the briefly summarised be bad by reference The accompanying drawings relate to embodiments of the disclosure and e described the shows schematic of a swing apparatus for moving a relative to a deposition 2A shows a schematic upper view of the swing apparatus of 1 shows a schematic rear view of the s wing apparatus of shows an exploded schematic view of the swing shows a schematic view of a swing including swing 4 shows a schematic side view of a vacuum processing 5 shows a schematic upper view of a vacuum processing and shows a diagram of method a OF EMBODIMENTS Reference will now be made detail to the embodiments of one or of are illustrated in the Within the description of the the same numbers refer to same Only the differences with respect to Individual embodiments Each example is provided by of explanation of the disclosure and is not meant as limitation of the features or described as part of one embodiment be or conjunction other embodiments to yield yet a further intended that the includes modifications and Unless specified the description of a or aspect in one embodiment applies to corresponding part aspect in another embodiment as embodimentsdescribed herein be utilized for inspecting large coated for The substrates or substrate receiving areas for She and methods described herein are configured can be large area substrates having a size of or above for a large substrate or carrier can be corresponds to about of substrates which corresponds to about nf substrates GEN which corresponds to about nr substrates x GEM which corresponds to about substrafes x or even GEM which to about substrates m larger generations such as GEN and GEM areas cast similarly For for display half sizes of the above mentioned substrate including GEM can be by evaporation of an apparatus for evaporating The half of the substrate generates may result from some processes running on a full substrate size and subsequent processes running on of a substrate previously The term as used herein particularly embrace substantially inflexible a slices of transparent crystal such as sapphire or the or a glass present disclosure is not limited thereto and the term may embrace flexible substrates as a web a According to which combined with any other embodiments described the substrate from any material suitable for material For substrate be selected from the group consisting of such compound carbon fiber any other material or of material of being coated by a deposition For example thickness of foe substrate a direction perpendicular to the surface of substrate can be within a range mm such as or In some the thickness of the substrate may be SO pm or The thickness of the substrate can be or shows a schematic side view of a swing apparatus according to an embodiment of the present The swing apparatus SO is used for moving a substrate 20 relative to a deposition source deposition source 30 has a longitudinal axis 31 and is intended for processing the substrate in particular for processing one surface of the substrate the front According to some one or more vertically oriented sputer sources may be According to some embodiments of the present which can be combined with other embodiments described a deposition source may be a line For one or more rotatable sputter cathodes can be A rotatable sputter cathode may a cylindrical such as a target of the material to be Two or more sputer cathodes may form an An array of rotational cathodes may generate a ripple for the coated material The swing apparatus includes a support body 40 for holding the substrate For the back surface of the substrate opposite to the front treated by the deposition source is in contact with the support body The swing apparatus 10 further includes a rotation mechanism 42 coupled to the support body 40 for moving the substrate 20 by angle 12 around a rotational axis 44 from a transfer or horizontal orientation I to a processing or vertical orientation at a processing in the swing apparatus includes a linear motion mechanism coupled to the support body 40 for translating the substrate 20 sideways relative to the longitudinal axis 31 of the deposition source when the substrate 20 is the processing orientation described in 2A and The of the support body 40 can be described by a rotation around a joint arranged at the rotation wherein the joint 43 forms an axis 44 of The movement of the support body cats also be understood as a folding up or a flap up dashed contours in show the support body being moved around the angle about 90 a transfer or horizontal orientation I to a processing or vertical orientation With the is intended to describe an wherein the front surface of substrate 20 is directed upwards so that the substrate ears easily be transferred to or With the term to an wherein the front surface of the deposition source so that target material can be deposited on the substrate The arrows 32 in show the direction of the ejected material or the The substrate 20 is moved by angle by a rotation about an axis into a processing area The movement of the substrate 20 angle into a processin area 7 be described as including an angular In the movement of the 20 by an angle 12 can include a translation For the axis of rotation can offset to an edge of the substrate providing a translational movement during of the substrate the The axis of rotation may additionally be particular towards the processing area 72 A support body 40 configured to move the substrate by an angle cars be understood as a rotatable mounted support body 40 configured at least to relate or swing aa an axis around a joint to change the of substrate surface being attached to the support body According which can be combined with other embodiments described the support body 40 configured to move the substrate 20 from a vertical orientation to a orientation A orientation can be understood particularly when referring the substrate 20 to allow for a deviation from the horizontal direction or orientation of 20 degrees or degrees a orientation 11 be to allow for a deviation fro the vertical direction or orientation of 20 degrees or 10 degrees A a vertical orientation of a substrate support might result in a more stable substrate during a substrate during deposition can be to have a deviation of orientation of the to the transport the alignment the substrate in particular before substrate 20 in a processing area 2A and show the swing apparatus of I according to upper view and a It noted that the support body 40 and therefore the substrate 20 can be translated sideways relative to the deposition source and specifically relative to the longitudinal axis of said deposition source The double arrows of the figures indicate that the support body 40 can translate on the right and on the left side of the deposition source The sideways translation is carried out when the substrate 20 is in the processing orientation when the front surface of the substrate faces the deposition source the movement is made possible by the of the linear motion mechanis that is coupled to the support body and is located the rotation mechanism The sideways movement of the substrate relative to the deposition source 30 allows for an improved uniformity of the deposited For a ripple of a deposition source array may be removed by movement of the substrate in a direction perpendicular to the axes of the deposition line This may be confirmed by several microwave hotoconductivity decay measurements or For the can he an indicator fo uniformity The movement of t he substrate 20 by an into a processing area 72 can described as a substantially angular displacement In the movement of the substrate 20 by an angle can a portion of translation reference to the support body can be moved b a translation movement aligned with a horizontal direction and b an angle about axis of towards the processing area other the support body 40 is configured to move the substrate 20 in a horizontal linear direction perpendicular the iongitudfoal axis 31 of the deposition source during the movement from foe transfer orientation I to the processing orientation snd and providing a linear offset between edge of the substrate 20 facing to the processing area 72 and the axis 31 Of the deposition As shown In the rotation mechanism 42 is located above the linear motion mechanism the 42 is supported by motion mechanism This leads advantage of positioning the parts of the mechanical rotational and translational mechanisms is a more compact and limited area of the apparatus According to which with any other embodiments described foe swing 10 includes a protection unit 50 for reducing particles produced by the deposition source 30 within the processing The protection unit can be a single element screening the moving parts of the rotation mechanism 42 of the linear motion mechanism 46 or can he a combination of two or more each protecting a different part of these moving parts in this particle generation in or close the processing area 72 is reduced or of generated particles the processing can be For the protection can at least a bellows The rotation mechanism 42 can include at least a rotating shaft 47 Inside said bellows bellows can have the form of rod tubes flexible tubes enveloping and covering the rotating shaft 47 of the rotation mechanism According to which can be combined with my other embodiments described the protection unit include least a or second bellows and the linear motion mechanism can include linear guides located inside said or second bellows The linear guides schematically shown for example in serve to provide the movements of the substrate relation to the deposition In this the one or more bellows have the form of rod or flexible tubes enveloping and covering the linear guides 49 of the linear motion mechanism The bellows can cover therefore protect other parts of the motion mechanism such as linear actuators coupled to linear guides to the fact that the 42 is supported by the linear a single bellows element can be configured to p the rotating shall guides two separated can be to protect the rotating shaft 47 of the mechanism li guides 49 of the linear motion mechanism to a support body understood as an configured to hold a substrate For the support be rigid such a a frame or a the support can be configured to support a of a substrate such as the back surface of a According to which can be combined with any other described the support body 40 a susceptor for the substrate the support body 40 can a heated plate in direct contact with the substrate the back surface of the substrate The heating can occur during the deposition process of the target material in processing area In the present elements can be understood as a holding arrangement configured to provide a fixing force for attaching the substrate described the substrate can be held to body 40 through clamps at the edges 2C describes the swing apparatus iO showing components in an exploded For the rotation mechanism 42 includes at least two spline shaft connection elements ami at least two rotation motors 422 in order to the substrate support body by an angle from the horizontal to the vertical The swing apparatus includes two tubular bellows 52 that symmetrically cover the left and the right part of the rotating shaft of the rotation mechanism Below the rotating shaft 47 is located the linear motion mechanism linear guides which can additionally be covered by the bellows The swing apparatus can further a frame 22 located at the processing area When the support body is rotated and is held in the vertical the substrate 20 is positioned at the area 72 and is ready for the deposition According to before the substrate is arranged support the substrate can be aligned with the support The alignment can be for example earned out by transport wherein the transport frame transports substrate being in a orientation above the support body A array can be provided position the substrate 2b on the support body aligned or centered The substrate also be aligned by simple pushers the substrate is put on the support body attached by the Afer the substrate 20 can attached or on the support body example a horizontal support body 40 cast subsequently be in a Doe the gravity forces upon of substrate may undergo According to some embodiments of the which can combined with other embodiments described at edges may be provided to allow for a combination reduced sagging easy release of the substrate from the support body 40 after processing In the present as regards the rotation mechanism at least an actuator is provided for moving the support body an axis actuator can be understood as rotation motor or an extendable for a mechanical or electric driven cylinder configured to a support body aroand an axis 44 front of the processing actuator can also understood as a actuator with a rack and pinion in particular an axis of rotation can be configured as a a swing or a rotating The axis may include an for example having a and a The axis directly A a gear can be An actuator can be or a rotatable mounted The actuator be fixed to support body the present as regards the linear motion mechanism at least an actuator is provided for the support body and therefore the substrate sideways in relation to the longitudinal axis 3 of deposition source For the actuator can he understood as a linear actuator with a rack an pinion The actuator can be actuator that can either be fluid such hydraulic of or electric by a screw or bail the actuator can rodless actuator that either fluid powered or electric powered via a lead hall belt or linear Both styles of actuators find application in guided The elements can profited round mil or other or sliding and 4 describe a module lor receiving a a transfer chamber of a vacuum processing system nd forpositioning said substrate processing area 22 of chamber 20 of toe vacuum processing swing module includes vacuum chamber and support body holding substrate 20 within the vacuum chamber A rotation mechanism coupled to support body is used moving the substrate 20 by around a axis 44 from a transfer or horizontal orientation processing or vertical orientation 3 shows the substrate in the transfer orientation A linear motion Coupled to the support body is used for translating the substrate sideways to p the longitudinal axis the deposition source the substrate 20 in processing orientation order to carry out the translational of the substrate as the linear motion mechanism is provided with a linear actuator coupled to linear guides which are located below the rotation mechanism a protection unit is provided for protecting both the rotation 42 and the linear motion mechanism 46 the particles generated by the deposition source shows an exemplary vacuum processing system 90 including at least a processing chamber at least swing module operatively coupled to the processing chamber positioning the substrate a processing area 72 of the processing chamber and at a transfer chamber SO operatively coupled the swing for moving the substrate 20 the Swing module in the swin module includes a vacuum and a support body for holding the substrate within the vacuum chamber the swing module 60 includes a rotation mechanism 42 coupled to support body for moving the substrate 20 by an angle around a axis 44 from a transfer or horizontal orientation I to a processing or vertical orientation the swing module includes a linear motion mechanism 46 coupled to the support body 40 for translating the substrate sideways relation the longitudinal of the deposition source when the substrate is in the orientation The vacuum chamber 62 of swing module as the transfer chamber can be with stands The swing module can Include Or cart be the processing chamber be provided with support pillars According to which can combined with embodiments described as illustrated in the vacuum system 90 can include vacuum transfer chamber wherein than particular two swing modules and are arranged adjacent the vacuum transfer chamber A substrate with lines in the is transferred to the vacuum transfer chamber through a load chamber load module The vacuum transfer chamber SO can mo ve substrate to a Vacuum chamber of a first swing module The processing system 90 can include a support chamber arranged on the vacuum transfe chamber 80 to perform specific functions like storage of substrates of the more then one load lock chamber may be For one load lock chamber may be provided for loading of into the transfer chamber and one lock chamber may be provided for unloading substrates from the transfer The substrate 20 can be arranged or attached on the support body by clamps in the vacuum chamber of the first swing module body moves the substrate 20 by an angle a to a orientation a processing area of the processing chamber front of a as described After the processing the substrate in the processing area of the processing chamber the substrate 20 is moved out of the processing area in a vertical orientation into the vacuum chamber of the first swing module The substrate 20 moved out of the vacuum chamber of swing module back to the transfer chamber After obtaining the substrate from the vacuum chamber of swing module the transfer chamber 80 can move the substrate 20 to a further swing module or with further processing chambers According to the movement of the substrate 20 fro a swing module to a further module can be understood as a lateral movement of the substrate wherein the substrate is move while being in s vertical orientation The chamber can be configured to rotate substrate 20 t enable alignment of the substrate 20 before moving substrate 20 to a process The substrate the transfer chamber from the of a first swing module to any other vacuum chamber of the swing arranged on the transfer chamber in According to the vacuum processing system can more than module transfer or processing A load can be understood a module capable for or an acceptance of a substrate for or removal of The load module 92 or load lock chamber can be a chamber with an opening at one being configured to receive substrate The load module can be connected to a transporting device being configured to transport a substrate 20 to the load module For load module 92 fee understood as an air lock for transferring a substrate 20 to chamber with low in particular to a chamber with vacuum According to the load module is connected to a transfer A transfer chamber be understood as a chamber with vacuum pressure connected to other substrate processing chambers or devices swing modules modules transfer chamber can configured to move a substrate to other modules or devices connected to the transfer chamber 80 for substrate processing According more than one swing module 60 arranged the transfer chamber In particular at the outer of the transfer chamber The transfer chamber can form a transporting path configuration between the s wing modules The transfer chamber can he understood as a transporting path wherein several swing modules and corresponding processing chambers and arranged at the lateral of the transporting pash Each swing module or processing chamber can connected to the path configuration for example by an opening or by an According to the vacuum processing system include than one swing modules and processing chambers 70 next to each a first swing module an moves a support body 40 around axis a processing area 72A of first processing chamber 70A as described For further substrate 20 can be to further swing processing chambers wherein the substrate 20 moved in a orientation from one swing module 60 to another swing module According to the transfer chamber have a be or circular A for example include a a a or swing module can arranged cm edge or more or each edge of the designs of the chamber When more than one swing module is the transfer chamber 80 can be arranged in the middle or in the the swing The arrangement of the transfer chamber 80 in the center or in the middle of the swing enables a design of a vacuum processing system More than one swing modules 60 and corresponding processing chambers can be arranged on the transfer chamber wherein each has the same distance from a center point of the transfer chamber It is further possible to arrange storage modules for substrates or any other substrate support modules at one or more edges of the design transfer chamber According to it is possible to connect two or more vacuum processing systems as described herein and enable substrate transporting and further substrate processing between the two or more vacuum processing systems According to transfer chamber configured to transfer the substrate being attached to the support body to the swing module The substrate being attached cars be understood as the substrate is kept attached is held by the clamps on the support body 40 while transported within the swing module 60 in the processing area The movement of the substrate 20 can be understood as a displacement in a horizontal The displacement can be carried out by a guiding system with rollers or the Keeping the substrate 20 attached to the support body 40 has the advantage that farther attaching and detaching operations of the substrate 20 with the clamps of the support body 40 can be avoided when the substrate enters a swing module and approaches the processing area enters the transfer chamber 80 again after Keeping the substrate 20 attached to the support body accelerate the substrate processing According to which may be combined with other embodiments described the processing chamber 70 includes one or more deposition source 30 having a longitudinal axis For an array of 4 or more linear deposition such as rotational spotter may be Further a processing chamber may also include implantation such a vertical linear implantation source The for for deposition sources or implantation can be understood m the sense that the source has a major dimension and a minor dimension defining an emission area of the or ions a substantially rectangular wherein the minor dimension is less than major the minor dimension can he less than specifically less than and specifically less than of the major The major dimension can substantially other the at least one linear source can a vertical According to some a beam width of the particles or ions provided by the at least one the emission can be in a range of between 1 mm specifically in a range of between mm and more specifically less than The beam width be defined perpendicular to the linear extension of the at least one linear in the linear source on may configured for a a cleaning process for the surface of the substrate son implantation the substrate or into a layer which was previously deposited on the substrate or a of a layer on the substrate in the linear source ros be configured for a cleaning or a of a substrate which may for example include the removal of a width of the processing chamber a dimension parallel to the substrate be significantly greater than the width of the substrate in a direction perpendicular to the it is understood that a processing chamber with a deposition source and large width can be employed in other for example in an apparatus having two or more such with deposition sources An extended width the processing move the substrate 20 along the deposition source 30 while enabling section of substrate is effected the beam 32 deposition source 30 The source as sputter source or as laser deposition a pulsed laser beam is focused the vacuu chamber to strike target of the material that to material ablated or from the and the resulting plasma plumb deposits as thin film the substrate For sputter typically magnetron sputtering may for example having a cylindrical target with permanent provided ithin target exemplary reference to embodiments of method processing a substrate 20 method includes holding substrate 20 a support body 40 of swing apparatus the substrate 20 relative to deposition scarce 30 for processing substrate 20 having longitudinal axis by ah angle amend a rotational 44 from a transfer or orientation I to a processing or vertical orientation by of a rotation mechanism 42 coupled to the support body and treating or processing fee surface of fee substrate 20 by a beam from the deposition source method includes translating substrafe sideways in relation to fee longitudinal axis 31 of the deposition source when the substrate is fee processing orientation by meads of a linear motion mechanism 46 coupled to fee body the method includes the substrate a horizontal linear direction perpendicular to axis of the source 30 during movement from the transfer orientation to processing orientation and vice The embodiments according to fee disclosure have several advantages including the to improve uniformity of the deposited the according to the present disclosure have advantage of reducing particle generation In or close to the processing While the foregoing is directed to embodiments of the other and further embodiments of the disclosure may be devised without departing from the basic scope and the scope thereof is determined by fee claims that insufficientOCRQuality