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1. WO2020004991 - HIGH FREQUENCY SWITCH FOR HIGH FREQUENCY SIGNAL TRANSMITTING/RECEIVING DEVICES

Publication Number WO/2020/004991
Publication Date 02.01.2020
International Application No. PCT/KR2019/007838
International Filing Date 27.06.2019
IPC
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31
Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
08
in which radiation controls flow of current through the device, e.g. photoresistors
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31
Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02
Details
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31
Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
12
structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
16
the semiconductor device sensitive to radiation being controlled by the light source or sources
H01L 31/08 (2006.01)
H01L 31/02 (2006.01)
H01L 31/16 (2006.01)
CPC
H01L 31/09
H01P 1/127
H01P 1/15
H01P 5/028
H03K 17/56
H03K 17/78
Applicants
  • SAMSUNG ELECTRONICS CO., LTD. [KR/KR]; 129, Samsung-ro, Yeongtong-Gu, Suwon-Si, Gyeonggi-do 16677, KR
Inventors
  • LUKYANOV, Anton Sergeevich; RU
  • SHEPELEVA, Elena Aleksandrovna; RU
  • NIKISHOV, Artem Yurievich; RU
  • EVTYUSHKIN, Gennadiy Aleksandrovich; RU
  • MAKURIN, Mikhail Nikolaevich; RU
  • KIM, Kisoo; KR
  • YANG, Dongil; KR
  • LEE, Jongin; KR
Agents
  • Y.P.LEE,MOCK & PARTNERS; 12F Daelim Acrotel, 13 Eonju-ro 30-gil, Gangnam-Gu, Seoul 06292, KR
Priority Data
10-2019-003320122.03.2019KR
201812329827.06.2018RU
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) HIGH FREQUENCY SWITCH FOR HIGH FREQUENCY SIGNAL TRANSMITTING/RECEIVING DEVICES
(FR) COMMUTATEUR HAUTE FRÉQUENCE POUR DISPOSITIFS D'ÉMISSION/RÉCEPTION DE SIGNAUX HAUTE FRÉQUENCE
Abstract
(EN)
Disclosed is a high frequency switch including a substrate, a pair of ground sections provided on the substrate, a center conductor provided between the pair of ground sections, and a photoconductive semiconductor element provided on the center conductor and extending between the center conductor and the pair of ground sections.
(FR)
L'invention concerne un commutateur haute fréquence comprenant un substrat, une paire de sections de mise à la terre situées sur le substrat, un conducteur central situé entre la paire de sections de mise à la terre, et un élément semi-conducteur photoconducteur situé sur le conducteur central et s'étendant entre le conducteur central et la paire de sections de mise à la terre.
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