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1. WO2020004746 - DISPLAY PANEL AND PREPARATION METHOD THEREOF

Publication Number WO/2020/004746
Publication Date 02.01.2020
International Application No. PCT/KR2018/016278
International Filing Date 20.12.2018
IPC
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27
Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
28
including components using organic materials as the active part, or using a combination of organic materials with other materials as the active part
32
with components specially adapted for light emission, e.g. flat-panel displays using organic light-emitting diodes
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51
Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
50
specially adapted for light emission, e.g. organic light emitting diodes (OLED) or polymer light emitting devices (PLED)
56
Processes or apparatus specially adapted for the manufacture or treatment of such devices or of parts thereof
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51
Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
50
specially adapted for light emission, e.g. organic light emitting diodes (OLED) or polymer light emitting devices (PLED)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30
Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
31
to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After-treatment of these layers; Selection of materials for these layers
3205
Deposition of non-insulating-, e.g. conductive- or resistive-, layers, on insulating layers; After-treatment of these layers
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30
Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
324
Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
H01L 27/32 (2006.01)
H01L 51/56 (2006.01)
H01L 51/50 (2006.01)
H01L 21/3205 (2006.01)
H01L 21/324 (2006.01)
H01L 21/02 (2006.01)
CPC
H01L 21/02
H01L 21/3205
H01L 21/324
H01L 27/32
H01L 51/50
H01L 51/56
Applicants
  • 삼성디스플레이 주식회사 SAMSUNG DISPLAY CO., LTD. [KR/KR]; 경기도 용인시 기흥구 삼성로 1 1, Samsung-ro, Giheung-gu Yongin-Si Gyeonggi-do 17113, KR
Inventors
  • 손상우 SOHN, Sangwoo; KR
  • 송도근 SONG, Dokeun; KR
  • 양수경 YANG, Sukyoung; KR
  • 이동민 LEE, Dongmin; KR
  • 신상원 SHIN, Sangwon; KR
  • 고경수 KO, Kyeongsu; KR
  • 김상갑 KIM, Sanggab; KR
  • 박홍식 PARK, Hongsick; KR
  • 신현억 SHIN, Hyuneok; KR
  • 이준걸 LEE, Joongeol; KR
Agents
  • 특허법인 고려 KORYO IP & LAW; 서울시 강남구 테헤란로 8길 41 6층 6F, 41, Teheran-ro 8-gil Gangnam-Gu Seoul 06239, KR
Priority Data
10-2018-007386227.06.2018KR
Publication Language Korean (KO)
Filing Language Korean (KO)
Designated States
Title
(EN) DISPLAY PANEL AND PREPARATION METHOD THEREOF
(FR) ÉCRAN D'AFFICHAGE OLED ET SON PROCÉDÉ DE PRÉPARATION
(KO) 표시패널 및 그 제조방법
Abstract
(EN)
A display panel comprises: a base layer; a signal line disposed on the base layer and comprising a first layer which comprises aluminum and a second layer which is directly disposed on the first layer and comprises niobium; a first thin film transistor connected to the signal line; a second thin film transistor disposed on the base layer; a capacitor electrically connected to the second thin film transistor; and a light-emitting diode electrically connected to the second thin film transistor.
(FR)
L'invention porte sur un écran d'affichage qui comprend : une couche de base ; une ligne de signal disposée sur la couche de base et comprenant une première couche qui comprend de l'aluminium et une seconde couche qui est disposée directement sur la première couche et comprend du niobium ; un premier transistor à couches minces connecté à la ligne de signal ; un second transistor à couches minces disposé sur la couche de base ; un condensateur connecté électriquement au second transistor à couches minces ; et une diode électroluminescente connectée électriquement au second transistor à couches minces.
(KO)
표시패널은 베이스층, 상기 베이스층 상에 배치되며, 알루미늄을 포함하는 제1 층 및 상기 제1 층 상에 직접 배치되고 니어븀으로 구성된 제2 층을 포함하는 신호라인, 상기 신호라인에 연결된 제1 박막 트랜지스터, 상기 베이스층상에 배치된 제2 박막 트랜지스터, 상기 제2 박막 트랜지스터와 전기적으로 연결된 커패시터 및 상기 제2 박막 트랜지스터에 전기적으로 연결된 발광소자를 포함한다.
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