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1. WO2020004644 - NANOCRYSTAL AND METHOD FOR MANUFACTURING SAME, AND ELECTRONIC DEVICE AND PIEZOELECTRIC ELEMENT USING NANOCRYSTAL

Publication Number WO/2020/004644
Publication Date 02.01.2020
International Application No. PCT/JP2019/025911
International Filing Date 28.06.2019
IPC
C CHEMISTRY; METALLURGY
30
CRYSTAL GROWTH
B
SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
29
Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
10
Inorganic compounds or compositions
16
Oxides
22
Complex oxides
B PERFORMING OPERATIONS; TRANSPORTING
82
NANO-TECHNOLOGY
Y
SPECIFIC USES OR APPLICATIONS OF NANO-STRUCTURES; MEASUREMENT OR ANALYSIS OF NANO-STRUCTURES; MANUFACTURE  OR TREATMENT OF NANO-STRUCTURES
30
Nano-technology for materials or surface science, e.g. nano-composites
B PERFORMING OPERATIONS; TRANSPORTING
82
NANO-TECHNOLOGY
Y
SPECIFIC USES OR APPLICATIONS OF NANO-STRUCTURES; MEASUREMENT OR ANALYSIS OF NANO-STRUCTURES; MANUFACTURE  OR TREATMENT OF NANO-STRUCTURES
40
Manufacture or treatment of nano-structures
C CHEMISTRY; METALLURGY
01
INORGANIC CHEMISTRY
G
COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F94
25
Compounds of zirconium
C CHEMISTRY; METALLURGY
30
CRYSTAL GROWTH
B
SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
7
Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
10
by application of pressure, e.g. hydrothermal processes
C CHEMISTRY; METALLURGY
30
CRYSTAL GROWTH
B
SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
29
Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
10
Inorganic compounds or compositions
16
Oxides
22
Complex oxides
32
Titanates; Germanates; Molybdates; Tungstates
C CHEMISTRY; METALLURGY
30
CRYSTAL GROWTH
B
SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
29
Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
60
characterised by shape
64
Flat crystals, e.g. plates, strips, disks
C CHEMISTRY; METALLURGY
30
CRYSTAL GROWTH
B
SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
29
Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
60
characterised by shape
66
Crystals of complex geometrical shape, e.g. tubes, cylinders
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
41
Piezo-electric devices in general; Electrostrictive devices in general; Magnetostrictive devices in general; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
16
Selection of materials
18
for piezo-electric or electrostrictive elements
187
Ceramic compositions
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
41
Piezo-electric devices in general; Electrostrictive devices in general; Magnetostrictive devices in general; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
22
Processes or apparatus specially adapted for the assembly, manufacture or treatment of piezo-electric or electrostrictive devices or of parts thereof
35
Forming piezo-electric or electrostrictive materials
39
Inorganic materials
43
by sintering
C30B 29/22 (2006.01)
B82Y 30/00 (2011.01)
B82Y 40/00 (2011.01)
C01G 25/00 (2006.01)
C30B 7/10 (2006.01)
C30B 29/32 (2006.01)
CPC
B82Y 30/00
B82Y 40/00
C01G 25/00
C30B 29/22
C30B 29/32
C30B 29/64
Applicants
  • 国立研究開発法人産業技術総合研究所 NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY [JP/JP]; 東京都千代田区霞が関1丁目3番1号 3-1, Kasumigaseki 1-chome, Chiyoda-ku, Tokyo 1008921, JP
Inventors
  • ▲高▼田 瑶子 TAKADA Yoko; JP
  • 三村 憲一 MIMURA Ken-ichi; JP
  • 加藤 一実 KATO Kazumi; JP
Agents
  • 西澤 和純 NISHIZAWA Kazuyoshi; JP
  • 大槻 真紀子 OTSUKI Makiko; JP
  • 大浪 一徳 ONAMI Kazunori; JP
Priority Data
2018-12475429.06.2018JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) NANOCRYSTAL AND METHOD FOR MANUFACTURING SAME, AND ELECTRONIC DEVICE AND PIEZOELECTRIC ELEMENT USING NANOCRYSTAL
(FR) NANOCRISTAL ET PROCÉDÉ DE FABRICATION DE CE DERNIER ET DISPOSITIF ÉLECTRONIQUE ET ÉLÉMENT PIÉZOÉLECTRIQUE UTILISANT LEDIT NANOCRISTAL
(JA) ナノ結晶及びその製造方法、並びにナノ結晶を用いた電子デバイス及び圧電素子
Abstract
(EN)
This nanocrystal: is a monocrystal represented by Pb(Zr,Ti)O3; has at least one of a (100) plane, a (010) plane and a (001) plane as a facet; and has a size of 1-1,000 nm.
(FR)
Ce nanocristal: est un monocristal représenté par Pb(Zr,Ti)O3; comporte, en tant que facette, au moins un plan parmi un plan (100), un plan (010) et un plan (001); et a une taille variant de 1 à 1000 nm.
(JA)
このナノ結晶は、Pb(ZrTi)Oで表される単結晶であり、(100)面、(010)面および(001)面の少なくともいずれか一つをファセットとして有すると共に、サイズが1nm以上1000nm以下である。
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