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1. WO2020004563 - CERAMIC SINTERED BODY AND MEMBER FOR PLASMA TREATMENT DEVICE

Publication Number WO/2020/004563
Publication Date 02.01.2020
International Application No. PCT/JP2019/025653
International Filing Date 27.06.2019
IPC
C CHEMISTRY; METALLURGY
04
CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
B
LIME; MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
35
Shaped ceramic products characterised by their composition; Ceramic compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
50
based on rare earth compounds
505
based on yttrium oxide
C CHEMISTRY; METALLURGY
04
CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
B
LIME; MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
35
Shaped ceramic products characterised by their composition; Ceramic compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
01
based on oxides
44
based on aluminates
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30
Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302
to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
306
Chemical or electrical treatment, e.g. electrolytic etching
3065
Plasma etching; Reactive-ion etching
C04B 35/505 (2006.01)
C04B 35/44 (2006.01)
H01L 21/3065 (2006.01)
CPC
C04B 35/44
C04B 35/505
H01L 21/3065
Applicants
  • 京セラ株式会社 KYOCERA CORPORATION [JP/JP]; 京都府京都市伏見区竹田鳥羽殿町6番地 6, Takeda Tobadono-cho, Fushimi-ku, Kyoto-shi, Kyoto 6128501, JP
Inventors
  • 田中 万平 TANAKA,Manpei; JP
Priority Data
2018-12303328.06.2018JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) CERAMIC SINTERED BODY AND MEMBER FOR PLASMA TREATMENT DEVICE
(FR) CORPS FRITTÉ EN CÉRAMIQUE ET ÉLÉMENT POUR DISPOSITIF DE TRAITEMENT AU PLASMA
(JA) セラミック焼結体およびプラズマ処理装置用部材
Abstract
(EN)
The ceramic sintered body according to the present disclosure contains yttrium oxide as a main component and yttrium silicate, wherein the ratio (I1/Io) of the maximum peak strength I1 of yttrium silicate at a diffraction angle 2θ of 30°-32° with respect to the maximum peak strength Io of yttrium oxide at a diffraction angle 2θ of 28°-30°, determined by an X-ray diffraction technique, is 0.03-0.12. The member for a plasma treatment device according to the present disclosure comprises the ceramic sintered body according to the present disclosure, is in the shape of a cylinder, the inside of which serves as a flow path of a gas for generating a plasma. The inner circumferential surface of the cylinder contains more yttrium silicate than the outer circumferential surface of the cylinder.
(FR)
L'invention concerne un corps fritté en céramique contenant de l'oxyde d'yttrium en tant que constituant principal et du silicate d'yttrium, le rapport (I1/Io) de l'intensité maximale de pic I1 du silicate d'yttrium à un angle de diffraction 2θ de 30°-32° par rapport à l'intensité maximale de pic Io de l'oxyde d'yttrium à un angle de diffraction 2θ de 28°-30°, déterminées par une technique de diffraction des rayons X, étant de 0,03-0,12. L'élément pour un dispositif de traitement au plasma selon la présente invention comprend le corps fritté en céramique selon la présente invention, se présente sous la forme d'un cylindre dont l'intérieur sert de trajet d'écoulement à un gaz pour générer un plasma. La surface circonférentielle interne du cylindre contient plus de silicate d'yttrium que la surface circonférentielle externe du cylindre.
(JA)
本開示のセラミック焼結体は、酸化イットリウムを主成分とし、珪酸イットリウムを含み、X線回折法によって得られる、回折角2θが28°~30°の酸化イットリウムの最大ピーク強度Ioに対する、回折角2θが30°~32°の珪酸イットリウムの最大ピーク強度I1の比(I1/Io)が0.03以上0.12以下である。本開示のプラズマ処理装置用部材は、本開示のセラミック焼結体からなり、内部がプラズマ生成用ガスの流路となる筒状体であり、前記筒状体の内周面は前記筒状体の外周面よりも珪酸イットリウムを多く含む。
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