Processing

Please wait...

Settings

Settings

1. WO2020004544 - BUMP HEIGHT MEASUREMENT DEVICE, SUBSTRATE PROCESSING DEVICE, BUMP HEIGHT MEASUREMENT METHOD, AND STORAGE MEDIUM

Publication Number WO/2020/004544
Publication Date 02.01.2020
International Application No. PCT/JP2019/025576
International Filing Date 27.06.2019
IPC
G PHYSICS
01
MEASURING; TESTING
B
MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
11
Measuring arrangements characterised by the use of optical means
02
for measuring length, width, or thickness
06
for measuring thickness
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30
Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302
to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
304
Mechanical treatment, e.g. grinding, polishing, cutting
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30
Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
31
to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After-treatment of these layers; Selection of materials for these layers
3205
Deposition of non-insulating-, e.g. conductive- or resistive-, layers, on insulating layers; After-treatment of these layers
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70
Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof
71
Manufacture of specific parts of devices defined in group H01L21/7086
768
Applying interconnections to be used for carrying current between separate components within a device
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23
Details of semiconductor or other solid state devices
52
Arrangements for conducting electric current within the device in operation from one component to another
522
including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
H ELECTRICITY
05
ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
K
PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
3
Apparatus or processes for manufacturing printed circuits
G01B 11/06 (2006.01)
H01L 21/304 (2006.01)
H01L 21/3205 (2006.01)
H01L 21/768 (2006.01)
H01L 23/522 (2006.01)
H05K 3/00 (2006.01)
CPC
G01B 11/06
H01L 21/304
H01L 21/3205
H01L 21/768
H01L 23/522
H05K 3/00
Applicants
  • 株式会社荏原製作所 EBARA CORPORATION [JP/JP]; 東京都大田区羽田旭町11番1号 11-1, Haneda Asahi-cho, Ota-ku, Tokyo 1448510, JP
Inventors
  • 奥園 貴久 OKUZONO, Takahisa; JP
  • 富田 正輝 TOMITA, Masaki; JP
  • 藤方 淳平 FUJIKATA, Jumpei; JP
  • ▲高▼▲柳▼ 秀樹 TAKAYANAGI, Hideki; JP
Agents
  • 小野 新次郎 ONO, Shinjiro; JP
  • 宮前 徹 MIYAMAE, Toru; JP
  • 鐘ヶ江 幸男 KANEGAE, Yukio; JP
  • 渡邊 誠 WATANABE, Makoto; JP
Priority Data
2018-12542729.06.2018JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) BUMP HEIGHT MEASUREMENT DEVICE, SUBSTRATE PROCESSING DEVICE, BUMP HEIGHT MEASUREMENT METHOD, AND STORAGE MEDIUM
(FR) DISPOSITIF DE MESURE DE HAUTEUR DE BOSSE, DISPOSITIF DE TRAITEMENT DE SUBSTRAT, PROCÉDÉ DE MESURE DE HAUTEUR DE BOSSE ET SUPPORT D'INFORMATIONS
(JA) バンプ高さ測定装置、基板処理装置、バンプ高さ測定方法、記憶媒体
Abstract
(EN)
The purpose of the present invention is to enable the easy measurement of bump height. A bump height measurement device comprises: an optical sensor that has a light source and a light-receiving element, and radiates light from the light source onto a substrate which has a seed layer, a resist layer formed on the seed layer, and a bump formed in an opening of the resist layer, the optical sensor using the light-receiving element to detect light reflected off the seed layer via the resist layer and light reflected off the bump; and a control device that, on the basis of the light reflected off the seed layer and the light reflected off the bump, calculates the bump height relative to the seed layer, subtracts the error caused by the refractive index of the resist layer from the bump height calculated on the basis of the reflected light, and corrects the bump height.
(FR)
L'objectif de la présente invention est de permettre de mesurer facilement la hauteur d'une bosse. À cet effet, un dispositif de mesure de hauteur de bosse comprend : un capteur optique qui comporte une source de lumière et un élément de réception de lumière, et rayonne une lumière provenant de la source de lumière sur un substrat qui comporte une couche de germe, une couche de réserve formée sur la couche de germe et une bosse formée dans une ouverture de la couche de réserve, le capteur optique utilisant l'élément de réception de lumière pour détecter la lumière réfléchie par la couche de germe par l'intermédiaire de la couche de réserve et la lumière réfléchie par la bosse ; et un dispositif de commande qui, sur la base de la lumière réfléchie par la couche de germe et de la lumière réfléchie par la bosse, calcule la hauteur de bosse par rapport à la couche de germe, soustrait l'erreur provoquée par l'indice de réfraction de la couche de réserve de la hauteur de bosse calculée sur la base de la lumière réfléchie, et corrige la hauteur de bosse.
(JA)
バンプ高さの測定を簡易にできるようにすることにある。光源及び受光素子を有する光センサであって、シード層と、前記シード層上に形成されたレジスト層と、前記レジスト層の開口部に形成されたバンプとを有する基板上に前記光源から光を照射し、前記レジスト層を介して前記シード層で反射された反射光と、前記バンプで反射された反射光とを前記受光素子で検出する光センサと、 前記シード層での前記反射光と前記バンプでの前記反射光に基づいて、前記シード層に対する前記バンプの高さを算出し、前記レジスト層の屈折率に起因する誤差を、前記反射光に基づいて算出された前記バンプの高さから減算して、前記バンプの高さを補正する制御装置と、 を備えるバンプ高さ測定装置。
Latest bibliographic data on file with the International Bureau