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1. WO2020004342 - SILVER PASTE AND JOINED BODY PRODUCTION METHOD

Publication Number WO/2020/004342
Publication Date 02.01.2020
International Application No. PCT/JP2019/024989
International Filing Date 24.06.2019
IPC
B PERFORMING OPERATIONS; TRANSPORTING
22
CASTING; POWDER METALLURGY
F
WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
1
Special treatment of metallic powder, e.g. to facilitate working, to improve properties; Metallic powders per se, e.g. mixtures of particles of different composition
B PERFORMING OPERATIONS; TRANSPORTING
22
CASTING; POWDER METALLURGY
F
WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
7
Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting
02
of composite layers
04
with one or more layers not made from powder, e.g. made from solid metal
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
B
CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
1
Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
20
Conductive material dispersed in non-conductive organic material
22
the conductive material comprising metals or alloys
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
50
Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/06-H01L21/326162
52
Mounting semiconductor bodies in containers
B22F 1/00 (2006.01)
B22F 7/04 (2006.01)
H01B 1/22 (2006.01)
H01L 21/52 (2006.01)
CPC
B22F 1/00
B22F 7/04
H01B 1/22
H01L 21/52
Applicants
  • 三菱マテリアル株式会社 MITSUBISHI MATERIALS CORPORATION [JP/JP]; 東京都千代田区丸の内三丁目2番3号 2-3, Marunouchi 3-chome, Chiyoda-ku, Tokyo 1008117, JP
Inventors
  • 沼 達也 NUMA Tatsuya; JP
  • 片瀬 琢磨 KATASE Takuma; JP
  • 八十嶋 司 YASOSHIMA Tsukasa; JP
  • 澤田 佳則 SAWADA Yoshinori; JP
  • 増山 弘太郎 MASUYAMA Kotaro; JP
Agents
  • 松沼 泰史 MATSUNUMA Yasushi; JP
  • 寺本 光生 TERAMOTO Mitsuo; JP
  • 細川 文広 HOSOKAWA Fumihiro; JP
  • 大浪 一徳 ONAMI Kazunori; JP
Priority Data
2018-11946325.06.2018JP
2019-06536329.03.2019JP
2019-11421420.06.2019JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) SILVER PASTE AND JOINED BODY PRODUCTION METHOD
(FR) PÂTE D'ARGENT ET PROCÉDÉ DE PRODUCTION DE CORPS ASSEMBLÉ
(JA) 銀ペースト及び接合体の製造方法
Abstract
(EN)
This silver paste contains a silver powder, a fatty acid silver salt, and an aliphatic amine. The silver powder contains first silver particles with a particle size of 100 nm or larger but smaller than 500 nm in a range of 55% to 95% by volume, second silver particles with a particle size of 50 nm or larger but smaller than 100 nm in a range of 5% to 40% by volume, and third silver particles with a particle size of smaller than 50 nm in a range of 5% by volume or smaller.
(FR)
L'invention concerne une pâte d'argent qui contient une poudre d'argent, un sel d'argent d'acide gras et une amine aliphatique. La poudre d'argent contient des premières particules d'argent ayant une taille de particule de 100 nm ou plus mais inférieure à 500 nm dans une plage de 55 % à 95 % en volume, des deuxièmes particules d'argent ayant une taille de particule de 50 nm ou plus mais inférieure à 100 nm dans une plage de 5 % à 40 % en volume, et des troisièmes particules d'argent ayant une taille de particule inférieure à 50 nm dans une plage de 5 % en volume ou moins.
(JA)
この銀ペーストは、銀粉と脂肪酸銀と脂肪族アミンとを含む。前記銀粉は、粒径が100nm以上500nm未満である第1銀粒子を55体積%以上95体積%以下の範囲で含み、粒径が50nm以上100nm未満である第2銀粒子を5体積%以上40体積%以下の範囲で含み、粒径が50nm未満である第3銀粒子を5体積%以下の範囲で含む。
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