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1. WO2020004316 - FILM FORMING MATERIAL FOR LITHOGRAPHY, FILM FORMING COMPOSITION FOR LITHOGRAPHY, UNDERLAYER FILM FOR LITHOGRAPHY, AND METHOD FOR FORMING PATTERN

Publication Number WO/2020/004316
Publication Date 02.01.2020
International Application No. PCT/JP2019/024930
International Filing Date 24.06.2019
IPC
G PHYSICS
03
PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
F
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7
Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
004
Photosensitive materials
09
characterised by structural details, e.g. supports, auxiliary layers
11
having cover layers or intermediate layers, e.g. subbing layers
C CHEMISTRY; METALLURGY
08
ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
F
MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
2
Processes of polymerisation
46
Polymerisation initiated by wave energy or particle radiation
48
by ultra-violet or visible light
C CHEMISTRY; METALLURGY
08
ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
F
MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
4
Polymerisation catalysts
04
Azo-compounds
C CHEMISTRY; METALLURGY
08
ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
F
MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
4
Polymerisation catalysts
28
Oxygen or compounds releasing free oxygen
32
Organic compounds
38
Mixtures of peroxy-compounds
C CHEMISTRY; METALLURGY
08
ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
F
MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
22
Homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a carboxyl radical and containing at least one other carboxyl radical in the molecule; Salts, anhydrides, esters, amides, imides, or nitriles thereof
36
Amides or imides
40
Imides, e.g. cyclic imides
G PHYSICS
03
PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
F
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7
Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
20
Exposure; Apparatus therefor
G PHYSICS
03
PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
F
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7
Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
26
Processing photosensitive materials; Apparatus therefor
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
027
Making masks on semiconductor bodies for further photolithographic processing, not provided for in group H01L21/18 or H01L21/34165
C CHEMISTRY; METALLURGY
08
ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
F
MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
220
Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride, ester, amide, imide, or nitrile thereof
02
Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
10
Esters
26
Esters containing oxygen in addition to the carboxy oxygen
28
containing no aromatic rings in the alcohol moiety
G03F 7/11 (2006.01)
C08F 2/48 (2006.01)
C08F 4/04 (2006.01)
C08F 4/38 (2006.01)
C08F 22/40 (2006.01)
G03F 7/20 (2006.01)
CPC
C08F 2/48
C08F 22/40
C08F 220/28
C08F 4/04
C08F 4/38
G03F 7/11
Applicants
  • 三菱瓦斯化学株式会社 MITSUBISHI GAS CHEMICAL COMPANY, INC. [JP/JP]; 東京都千代田区丸の内二丁目5番2号 5-2, Marunouchi 2-chome, Chiyoda-ku, Tokyo 1008324, JP
Inventors
  • 上野 雅義 UENO, Masayoshi; JP
  • 山田 弘一 YAMADA, Kouichi; JP
  • 千葉 彬史 CHIBA, Akifumi; JP
  • 杉戸 健 SUGITO, Ken; JP
  • 堀内 淳矢 HORIUCHI, Junya; JP
  • 牧野嶋 高史 MAKINOSHIMA, Takashi; JP
  • 越後 雅敏 ECHIGO, Masatoshi; JP
Agents
  • 稲葉 良幸 INABA, Yoshiyuki; JP
  • 大貫 敏史 ONUKI, Toshifumi; JP
  • 内藤 和彦 NAITO, Kazuhiko; JP
Priority Data
2018-12081526.06.2018JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) FILM FORMING MATERIAL FOR LITHOGRAPHY, FILM FORMING COMPOSITION FOR LITHOGRAPHY, UNDERLAYER FILM FOR LITHOGRAPHY, AND METHOD FOR FORMING PATTERN
(FR) MATÉRIAU FILMOGÈNE POUR LITHOGRAPHIE, COMPOSITION FILMOGÈNE POUR LITHOGRAPHIE, FILM DE SOUS-COUCHE POUR LITHOGRAPHIE ET PROCÉDÉ DE FORMATION DE MOTIF
(JA) リソグラフィー用膜形成材料、リソグラフィー用膜形成用組成物、リソグラフィー用下層膜及びパターン形成方法
Abstract
(EN)
The present invention addresses the problem of providing a film forming material for lithography, etc. to which a wet process is applicable and which is useful for forming a photoresist underlayer film having excellent heat resistance, etching resistance, characteristics embedding into a stepped substrate, and film flatness. The problem can be solved by a film forming material for lithography containing a compound having a group of formula (0).
(FR)
La présente invention aborde le problème de la fourniture d'un matériau filmogène pour lithographie auquel un procédé humide est applicable et qui est utile pour la formation d'un film de sous-couche de résine photosensible ayant une excellente résistance à la chaleur, une excellente résistance à la gravure, des caractéristiques incorporées dans un substrat étagé et une planéité de film. Le problème peut être résolu par un matériau filmogène pour lithographie qui contient un composé ayant un groupe de la formule (0).
(JA)
本発明は、湿式プロセスが適用可能であり、耐熱性、エッチング耐性、段差基板への埋め込み特性及び膜の平坦性に優れるフォトレジスト下層膜を形成するために有用な、リソグラフィー用膜形成材料等を提供することを課題とする。前記課題は、下記式(0)の基: を有する化合物を含有する、リソグラフィー用膜形成材料によって解決することができる。
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