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1. WO2020004250 - CRYSTALLINE OXIDE FILM

Publication Number WO/2020/004250
Publication Date 02.01.2020
International Application No. PCT/JP2019/024654
International Filing Date 21.06.2019
IPC
C CHEMISTRY; METALLURGY
30
CRYSTAL GROWTH
B
SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
29
Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
10
Inorganic compounds or compositions
16
Oxides
C CHEMISTRY; METALLURGY
01
INORGANIC CHEMISTRY
G
COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F94
15
Compounds of gallium, indium, or thallium
C CHEMISTRY; METALLURGY
01
INORGANIC CHEMISTRY
G
COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F94
55
Compounds of ruthenium, rhodium, palladium, osmium, iridium, or platinum
C CHEMISTRY; METALLURGY
23
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
C
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16
Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes
22
characterised by the deposition of inorganic material, other than metallic material
30
Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
40
Oxides
C CHEMISTRY; METALLURGY
30
CRYSTAL GROWTH
B
SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
25
Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth
02
Epitaxial-layer growth
18
characterised by the substrate
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
34
the devices having semiconductor bodies not provided for in groups H01L21/06, H01L21/16, and H01L21/18159
36
Deposition of semiconductor materials on a substrate, e.g. epitaxial growth
365
using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
34
the devices having semiconductor bodies not provided for in groups H01L21/06, H01L21/16, and H01L21/18159
36
Deposition of semiconductor materials on a substrate, e.g. epitaxial growth
368
using liquid deposition
C30B 29/16 (2006.01)
C01G 15/00 (2006.01)
C01G 55/00 (2006.01)
C23C 16/40 (2006.01)
C30B 25/18 (2006.01)
H01L 21/365 (2006.01)
CPC
C01G 15/00
C01G 55/00
C23C 16/40
C30B 25/18
C30B 29/16
Applicants
  • 株式会社FLOSFIA FLOSFIA INC. [JP/JP]; 京都府京都市西京区御陵大原1番29号 1-29, Goryoohara, Nishikyo-ku, Kyoto-shi, Kyoto 6158245, JP
Inventors
  • ▲高▼橋勲 TAKAHASHI Isao; JP
  • 四戸孝 SHINOHE Takashi; JP
Priority Data
2018-12140526.06.2018JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) CRYSTALLINE OXIDE FILM
(FR) FILM D'OXYDE CRISTALLIN
(JA) 結晶性酸化物膜
Abstract
(EN)
The present invention provides an epitaxial film that has a corundum structure, in which defects such as dislocation due to facet growth are reduced, which is useful for semiconductor devices and the like, and which has excellent crystal quality. A crystalline oxide film includes a traverse direction growth region having a corundum structure, wherein: the traverse direction growth region does not substantially include a facet growth region, has a crystal growth direction that is the c-axis direction or approximately the c-axis direction, and includes a dislocation line extending in the c-axis direction or in the approximately c-axis direction; and crystalline oxides, in which crystal growth extends in the c-axis direction or in the approximately c-axis direction, are bonded to each other.
(FR)
La présente invention concerne un film épitaxial qui possède une structure de corindon, dans laquelle des défauts tels que la dislocation due à la croissance de facettes sont réduits, qui est utile pour des dispositifs à semi-conducteur et similaires, et qui possède une excellente qualité de cristal. Le film d'oxyde cristallin comprend une région de croissance dans la direction transversale possédant une structure de corindon, la région de croissance dans la direction transversale ne comprenant sensiblement pas de région de croissance de facette, possédant une direction de croissance cristalline qui est la direction d'axe c ou approximativement la direction d'axe c, et comprenant une ligne de dislocation s'étendant dans la direction de l'axe c ou approximativement dans la direction de l'axe c ; et des oxydes cristallins, dans lesquels la croissance cristalline s'étend dans la direction de l'axe c ou approximativement dans la direction de l'axe c, étant liés les uns aux autres.
(JA)
本発明は、ファセット成長による転位などの欠陥が低減された半導体装置等に有用な結晶品質に優れたコランダム構造を有するエピタキシャル膜を提供する。コランダム構造の横方向成長領域を含む結晶性酸化物膜であって、前記横方向成長領域が、ファセット成長領域を実質的に含まず、結晶成長方向がc軸または略c軸方向であり、c軸または略c軸方向に伸びている転位線を含んでおり、c軸または略c軸方向に結晶成長が拡がった結晶性酸化物同士が互いに接合している。
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